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以BaBiO3为导电相,BaFe0.4Sn0.6O3为高阻相,采用固态反应法制备了不同BaBiO3含量的BaFe0.4Sn0.6O3/BaBiO3负温度系数(NTC)热敏复合陶瓷.为获得在渗流阈值(即BaBiO3含量为12 mol%)前后复合陶瓷的内部导电机理,对复合陶瓷进行了阻抗分析.分
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关键词:
- BaFe0.4Sn0.6O3/BaBiO3负温度系数复合陶瓷 /
- 渗流阈值 /
- 阻抗分析
The BaFe0.4Sn0.6O3/BaBiO3 composite negative temperature coefficient (NTC) thermistor ceramics were prepared by conventional solid-state reaction method. The raw materials used are composed of conductive BaBiO3 phase and high resistive BaFe0.4Sn0.6O3 phase. The conductive mechanism of thermistor ceramics before and after the percolation threshold (containing 12 mol% of BaBiO3), is investigated by impedance analysis. For compositions with 5 mol%—8 mol% of BaBiO3, the contribution to the conductivity is mainly due to the grain boundary (Rb), grain (Rg), and grain shell (Rs) existing in the BaFe0.4Sn0.6O3. In the range of 10 mol%—12 mol% of BaBiO3, the grain (Rbg) and grain boundary resistance (Rbb) corresponding to the BaFe0.4Sn0.6O3 melted with BaBiO3 in composite ceramic, are also main factor governing the resistance magnitude, the values of which are lower than the other main sources like Rb, Rg, and Rs. For composition x=0.15, the values of Rbb and Rbg are higher than that of Rb, Rg and Rs. For BaBiO3 contents around 20 mol%, the resistance is mainly determined by the values of Rbb and Rbg. In addition to the electrode-specimen interface, all of the components in composite ceramic show NTC feature. The NTC composite ceramics with different BaBiO3 contents show nonideal Debye-like behavior, and the conduction mechanism of the composite ceramics is of the localizing type.-
Keywords:
- BaFe0.4Sn0.6O3/BaBiO3 composite negative temperature coefficient ceramics /
- percolation threshold /
- impedance analysis
[1] Liu P, He Y, Li J, Zhu G Q, Bian X B 2007 Acta Phys. Sin. 56 5489 (in Chinese) [刘 鹏、贺 颖、李 俊、朱刚强、边小兵 2007 56 5489]
[2] Xiang J, Wang X H 2008 Acta Phys. Sin. 57 4417 (in Chinese) [向 军、王晓晖 2008 57 4417]
[3] Mu C H, Liu P, He Y, Zhang D, Meng L, Bian X B 2008 Acta Phys. Sin. 57 2432 (in Chinese) [慕春红、刘 鹏、贺 颖、张 丹、孟 玲、边小兵 2008 57 2432]
[4] Sinclair D C, West A R 1989 J. Appl. Phys. 66 3850
[5] Norbre M A L, Lanfredi S 2003 J. Appl. Phys. 93 5576
[6] Heinen B, Waser R 1998 J. Mater. Sci. 33 4603
[7] Xiang P H, Takeda H, Shiosaki T 2007 Appl. Phys. Lett. 91 162904
[8] Abram E J, Sinclair D C, West A R 2001 J. Electroceram. 7 179
[9] Imai Y, Katoa M, Noji T, Koike Y, Hedo M, Uwatoko Y, Mori N 2005 Physica C 426 497
[10] Sleight A W, Gillson J L, Biersted P E 1975 Solid State Commun.17 27
[11] Luo Y, Liu X Y 2005 Mater. Lett. 59 3881
[12] Park J H, Bae J S, Choi B C, Jeong J H 2007 J. Phys. D 40 579
[13] Gerhardt R 1994 J. Phys. Chem. Solids 55 1491
[14] Norbre M A L, Lanfredi S 2003 Appl. Phys. Lett. 82 2284
[15] Rahmouni H, Nouiri M, Jemai R, Kallel N, Rzigua F, Selmi A, Khirouni K, Alaya S 2007 J. Magn. Magn. Mater. 316 23
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[1] Liu P, He Y, Li J, Zhu G Q, Bian X B 2007 Acta Phys. Sin. 56 5489 (in Chinese) [刘 鹏、贺 颖、李 俊、朱刚强、边小兵 2007 56 5489]
[2] Xiang J, Wang X H 2008 Acta Phys. Sin. 57 4417 (in Chinese) [向 军、王晓晖 2008 57 4417]
[3] Mu C H, Liu P, He Y, Zhang D, Meng L, Bian X B 2008 Acta Phys. Sin. 57 2432 (in Chinese) [慕春红、刘 鹏、贺 颖、张 丹、孟 玲、边小兵 2008 57 2432]
[4] Sinclair D C, West A R 1989 J. Appl. Phys. 66 3850
[5] Norbre M A L, Lanfredi S 2003 J. Appl. Phys. 93 5576
[6] Heinen B, Waser R 1998 J. Mater. Sci. 33 4603
[7] Xiang P H, Takeda H, Shiosaki T 2007 Appl. Phys. Lett. 91 162904
[8] Abram E J, Sinclair D C, West A R 2001 J. Electroceram. 7 179
[9] Imai Y, Katoa M, Noji T, Koike Y, Hedo M, Uwatoko Y, Mori N 2005 Physica C 426 497
[10] Sleight A W, Gillson J L, Biersted P E 1975 Solid State Commun.17 27
[11] Luo Y, Liu X Y 2005 Mater. Lett. 59 3881
[12] Park J H, Bae J S, Choi B C, Jeong J H 2007 J. Phys. D 40 579
[13] Gerhardt R 1994 J. Phys. Chem. Solids 55 1491
[14] Norbre M A L, Lanfredi S 2003 Appl. Phys. Lett. 82 2284
[15] Rahmouni H, Nouiri M, Jemai R, Kallel N, Rzigua F, Selmi A, Khirouni K, Alaya S 2007 J. Magn. Magn. Mater. 316 23
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