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为了研究有机半导体材料的载流子传输特性，制备了单层器件ITO/NPB/Ag，建立了该器件的理论导纳模型. 利用正弦小信号频域测试法得到该器件在不同直流偏压下的频率特性样本. 定义了同时包含有机半导体阻抗实部和虚部的模型参数辨识问题的目标函数，采用粒子群算法对包括载流子迁移时间τdc，色散度参数M和α在内的模型参数进行辨识. 为了验证提出方法的有效性，建立了器件的等效电路模型，并用最小二乘算法辨识出等效电路的时间常数τc. 实验上对1000 nm和1200 nm的单层器件进行频域测试，经计算发现τdc和τc 之间具有相同的比例关系，通过对计算出的空穴迁移率μdc 进行指数拟合发现，两种厚度的NPB器件的空穴迁移率与电场强度呈指数增加，且满足著名的Poole-Frenkel 公式.In order to study the carrier transporting properties in organic semiconductors (OSCs), the samples of single layer structure ITO/NPB/Ag are prepared, and the corresponding admittance model in theory is built. Impedance samples of the structure under different DC bias voltages are obtained by small sinusoidal signal frequency test method. The particle swarm optimization (PSO) algorithm, in which fitness function includes both the real part and the imaginary part of OSC impedance, is used to identify the model parameter including dispersion coefficient M, α and charge-carrier transit time τdc. To validate the proposed method, an equivalent circuit model of the structure, whose time constant τc is identified by least squares method, is built. Two single-layer structures, whose NPB thickness values are respectively 1000 nm and 1200 nm, are tested. Test results show that the charge-carrier transit time τdc is proportional to the time constant τc and the two hole mobility μdc values both satisfy the famous Poole-Frenkel formula.
[1] Xue J, Uchida S, Rand B P, Forrest S R 2004 Appl. Phys. Lett. 84 3013
[2] Angelis F D, Cipolloni S, Mariucci L, Fortunato G 2005 Appl. Phys. Lett. 86 3505
[3] Haddock N J, Domercq B, KippelenB 2005 Electron. Lett. 41 444
[4] Peng Y Q, Zhang F J, Song C A 2003 Chin. Phys. B 12 796
[5] Li X S, Peng Y Q, Yang Q S, Xing H W, Lu F P 2007 Acta Phys. Sin. 56 5441 (in Chinese) [李训栓, 彭应全, 杨青森, 刑宏伟, 路飞平 2007 56 5441]
[6] Niu L B, Guan Y X 2009 Acta Phys. Sin. 58 4931 (in Chinese) [牛连斌, 关云霞 2009 58 4931]
[7] Chen Z Y, Ye T L, Ma D G 2009 Prog. Chem. 21 940
[8] Cheung C H, Tsung K K, So S K 2008 Appl. Phys. Lett. 93 8
[9] Tsang S W,Tong K L, Tse S C, So S K 2006 Org. Elec. 7 6
[10] Wu C C, Liu T L,Hung W Y, Lin Y T, Wang K T, Chen R T, Chen Y M, Chen Y Y 2003 J. Am. Chem. Soc. 125 3710
[11] Chen Z Y, Ye T L, Ma D G 2009 Prog. Chem. 21 940 (in Chinese) [陈振宇, 叶腾凌, 马东阁 2009 化学进展 21 940]
[12] Martens H C F, Brom H B, Blom P W M 1999 Phys. Rev. B 60 8489
[13] Berleb S, Brtting W 2002 Phys. Rev. Lett. 89 6601
[14] Tsang S W, So S K, Xu J B 2006 J. Appl. Phys. 99 3706
[15] Tripathi D C, Tripathi A K, Mohapatra Y N 2011 Appl. Phys. Lett. 98 3304
[16] Böttger H, Bryksin V V 1985 Hopping Conduction in Solids (Berlin: Akademie-Verlag) p224
[17] Kennedy J, Eberhart R C 1995 Proceedings of IEEE International Conference on Neural Networks Western Australia, 27 November–1 December, 1995 p1942
[18] Wang X F, Xue H J, Si S K, YaoY T 2009 Atca Phys. Sin. 58 3729 (in Chinese) [王校锋, 薛红军, 司守奎, 姚跃亭 2009 58 3729]
[19] Long W, Jiao J J, Long Z Q 2011 Atca Phys. Sin. 60 110506 (in Chinese) [龙文, 焦建军, 龙祖强 2011 60 110506]
[20] Liu C H,Zhang Y J, Zhang J, Wu J H 2011 Atca Phys. Sin. 60 019501 (in Chinese) [刘朝华, 张英杰, 章兢, 吴建辉 2011 60 019501]
[21] Pedersen M E H, Chipperfield A J 2010 Appl. Soft Comput. 10 618
[22] Sedighizadeh D, Masehian E 2009 Int. J. Comput. Theor. Engineer. 1 1
[23] Shi Y, Eberhart R C 1998 Evolutionary Programming VⅡ, Springer, Lecture Notes in Computer Science 1447 p591
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[1] Xue J, Uchida S, Rand B P, Forrest S R 2004 Appl. Phys. Lett. 84 3013
[2] Angelis F D, Cipolloni S, Mariucci L, Fortunato G 2005 Appl. Phys. Lett. 86 3505
[3] Haddock N J, Domercq B, KippelenB 2005 Electron. Lett. 41 444
[4] Peng Y Q, Zhang F J, Song C A 2003 Chin. Phys. B 12 796
[5] Li X S, Peng Y Q, Yang Q S, Xing H W, Lu F P 2007 Acta Phys. Sin. 56 5441 (in Chinese) [李训栓, 彭应全, 杨青森, 刑宏伟, 路飞平 2007 56 5441]
[6] Niu L B, Guan Y X 2009 Acta Phys. Sin. 58 4931 (in Chinese) [牛连斌, 关云霞 2009 58 4931]
[7] Chen Z Y, Ye T L, Ma D G 2009 Prog. Chem. 21 940
[8] Cheung C H, Tsung K K, So S K 2008 Appl. Phys. Lett. 93 8
[9] Tsang S W,Tong K L, Tse S C, So S K 2006 Org. Elec. 7 6
[10] Wu C C, Liu T L,Hung W Y, Lin Y T, Wang K T, Chen R T, Chen Y M, Chen Y Y 2003 J. Am. Chem. Soc. 125 3710
[11] Chen Z Y, Ye T L, Ma D G 2009 Prog. Chem. 21 940 (in Chinese) [陈振宇, 叶腾凌, 马东阁 2009 化学进展 21 940]
[12] Martens H C F, Brom H B, Blom P W M 1999 Phys. Rev. B 60 8489
[13] Berleb S, Brtting W 2002 Phys. Rev. Lett. 89 6601
[14] Tsang S W, So S K, Xu J B 2006 J. Appl. Phys. 99 3706
[15] Tripathi D C, Tripathi A K, Mohapatra Y N 2011 Appl. Phys. Lett. 98 3304
[16] Böttger H, Bryksin V V 1985 Hopping Conduction in Solids (Berlin: Akademie-Verlag) p224
[17] Kennedy J, Eberhart R C 1995 Proceedings of IEEE International Conference on Neural Networks Western Australia, 27 November–1 December, 1995 p1942
[18] Wang X F, Xue H J, Si S K, YaoY T 2009 Atca Phys. Sin. 58 3729 (in Chinese) [王校锋, 薛红军, 司守奎, 姚跃亭 2009 58 3729]
[19] Long W, Jiao J J, Long Z Q 2011 Atca Phys. Sin. 60 110506 (in Chinese) [龙文, 焦建军, 龙祖强 2011 60 110506]
[20] Liu C H,Zhang Y J, Zhang J, Wu J H 2011 Atca Phys. Sin. 60 019501 (in Chinese) [刘朝华, 张英杰, 章兢, 吴建辉 2011 60 019501]
[21] Pedersen M E H, Chipperfield A J 2010 Appl. Soft Comput. 10 618
[22] Sedighizadeh D, Masehian E 2009 Int. J. Comput. Theor. Engineer. 1 1
[23] Shi Y, Eberhart R C 1998 Evolutionary Programming VⅡ, Springer, Lecture Notes in Computer Science 1447 p591
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