外电场对InGaAsP/InP量子阱内激子结合能的影响

王文娟; 王海龙; 龚谦; 宋志棠; 汪辉; 封松林

doi:10.7498/aps.62.237104

摘要

在有效质量近似下采用变分法计算了InGaAsP/InP量子阱内不同In组分下的激子结合能，分析了结合能随阱宽和In组分的变化情况，并且讨论了外加电场对激子结合能的影响. 结果表明：激子结合能是阱宽的一个非单调函数，随阱宽的变化呈现先增加后减小的趋势；随着In组分增大，激子结合能达到最大值的阱宽相应变小，这与材料的带隙改变有关；在一定范围内电场的存在对激子结合能的影响很小，但电场强度较大时会破坏激子效应.

关键词:

Abstract

Exciton binding energies in InGaAsP/InP quantum well with different contents of In are calculated through variational method in the effective mass approximation. The variation of exciton binding energy as a function of well width, In content, and applied external electric field is studied. It is shown that the exciton binding energy is a non-monotonic function of well width. It increases first until reaching a maximum, and then decreases as the well width increases farther. In addition, with the increase of In content, the well width should increase to reach the maximum value of exciton binding energy. It is also found that the external electric field has little effect on binding energy, but when the electric field is large enough, it will destroy the excitonic effect. These results may provide some theoretical basis for the design and control of InGaAsP/InP optical devices.

Keywords:

作者及机构信息

1.
山东省激光偏光与信息技术重点实验室, 曲阜师范大学物理系, 曲阜 273165;

2.
中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室, 上海 200050;

3.
中国科学院上海高等研究院, 上海 201203

基金项目: 国家自然科学基金（批准号：60976015，61176065）、山东省自然科学基金（批准号：ZR2010FM023）和信息功能材料国家重点实验开放课题资助的课题.

Authors and contacts

1.
Shandong Provincial Key Laboratory of Laser Polarization and Information Technology, Department of Physics, Qufu Normal University, Qufu 273165, China;

2.
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

3.
Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201203, China

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 60976015, 61176065), the Shandong Provincial Natural Science Foundation, China (Grant No. ZR2010FM023), and the Open Project of State Key Laboratory of Functional Materials for Informatics.

参考文献

[1]	Turkowski V, Leonardo A, Ullrich C A 2009 Phys. Rev. B 79 233201
[2]	Gil B, Felbacq D, Chichibu S F 2012 Phys. Rev. B 85 075205
[3]	Zhang H, Liu L, Liu J J 2007 Acta Phys. Sin. 56 0487 (in Chinese) [张红, 刘磊, 刘建军 2007 56 0487]
[4]	Ha S H, Ban S L 2008 J. Phys.: Condens. Matter 20 085218
[5]	Kuo Y H, Li Y S 2009 Phys. Rev. B 79 245328
[6]	High A A, Leonard J R, Hammack A T, Fogler M M, Butov L V, Kavokin A V, Campman K L, Gossard A C 2012 Nature 483 584
[7]	Schaller R D, Klimov V I, 2004 Phys. Rev. Lett. 92 186601
[8]	Albrecht K F, Wang H B, Mhlbacher L, Thoss M, Komnik A 2012 Phys. Rev. B 86 081412
[9]	Wang Z J, Pedrosa H, Krauss T, Rothberg L 2006 Phys. Rev. Lett. 96 047403
[10]	You H L, Zhang C F 2009 Chin. Phys. B 18 0349
[11]	Chen J, Perebeinos V, Freitag M, Tsang J, Fu Q, Liu J, Avouris P 2005 Science 310 1171
[12]	Hu Z H, Huang D X 2003 Acta Phys. Sin. 52 1488 (in Chinese) [胡振华, 黄德修 2003 52 1488]
[13]	Belhadj T, Simon C M, Amand T, Renucci P, Chatel B, Krebs O, Lemaitre A, Voisin P, Marie X, Urbaszek B 2009 Phys. Rev. Lett. 103 086601
[14]	Li W S, Sun B Q 2013 Acta Phys. Sin. 62 047801 (in Chinese) [李文生, 孙宝权 2013 62 047801]
[15]	Klimov V I, Ivanov S A, Nanda J, Achermann M, Bezel I, McGuire J A, Piryatinski A 2007 Nature 447 441
[16]	Dvorak M, Wei S H, Wu Z G 2013 Phys. Rev. Lett. 110 016402
[17]	Shen M, Bai Y K, An X T, Liu J J 2013 Chin. Phys. B 22 047101
[18]	Tudury H A P, Nakaema M K K, Iikawa F, Brum J A, Ribeiro E, Carvalho W, Jr, Bernussi A A, Gobbi A L 2001 Phys. Rev. B 64 153301
[19]	Kong D H, Zhu H L, Liang S, Qiu J F, Zhao L J 2012 Chin. Phys. Lett. 29 024201
[20]	Yin X, Wang H L, Gong Q, Feng S L 2013 Chinese J. Quantum Electron 30 236 (in Chinese) [尹新, 王海龙, 龚谦, 封松林 2013 量子电子学报 30 236]
[21]	Wang H L, Jiang L M, Gong Q, Feng S L 2010 Physica B 405 3818
[22]	Dacal L C O, Brum J A 2002 Phys. Rev. B 65 115324
[23]	Wu H T, Wang H L, Jiang L M, Gong Q, Feng S L 2009 Physica B 404 122
[24]	Sivalertporn K, Mouchliadis L, Ivanov A L, Philp R, Muljarov E A 2012 Phys. Rev. B 85 045207
[25]	Jiang L M, Wang H L, Wu H T, Gong Q, Feng S L 2008 Chin. Phys. Lett. 25 3017
[26]	Harrison P, Quantum Wells, Wires and Dots: Theoretical and Computational Physics of Semiconductor Nanostructure, 2nd ed (John Wiley & Sons, New York, 2005)
[27]	Li E H 2000 Physica E 5 215
[28]	Priester C, Allan G, Lannoo M 1984 Phys. Rev. B 30 7302
[29]	Haines M J L S, Ahmed N, Adams S J A, Mitchell K, Agool I R, Pidgeon C R, Cavenett B C, O’Reilly E P, Ghiti A, Emeny M T 1991 Phys. Rev. B 43 11944

施引文献

[1]	Turkowski V, Leonardo A, Ullrich C A 2009 Phys. Rev. B 79 233201
[2]	Gil B, Felbacq D, Chichibu S F 2012 Phys. Rev. B 85 075205
[3]	Zhang H, Liu L, Liu J J 2007 Acta Phys. Sin. 56 0487 (in Chinese) [张红, 刘磊, 刘建军 2007 56 0487]
[4]	Ha S H, Ban S L 2008 J. Phys.: Condens. Matter 20 085218
[5]	Kuo Y H, Li Y S 2009 Phys. Rev. B 79 245328
[6]	High A A, Leonard J R, Hammack A T, Fogler M M, Butov L V, Kavokin A V, Campman K L, Gossard A C 2012 Nature 483 584
[7]	Schaller R D, Klimov V I, 2004 Phys. Rev. Lett. 92 186601
[8]	Albrecht K F, Wang H B, Mhlbacher L, Thoss M, Komnik A 2012 Phys. Rev. B 86 081412
[9]	Wang Z J, Pedrosa H, Krauss T, Rothberg L 2006 Phys. Rev. Lett. 96 047403
[10]	You H L, Zhang C F 2009 Chin. Phys. B 18 0349
[11]	Chen J, Perebeinos V, Freitag M, Tsang J, Fu Q, Liu J, Avouris P 2005 Science 310 1171
[12]	Hu Z H, Huang D X 2003 Acta Phys. Sin. 52 1488 (in Chinese) [胡振华, 黄德修 2003 52 1488]
[13]	Belhadj T, Simon C M, Amand T, Renucci P, Chatel B, Krebs O, Lemaitre A, Voisin P, Marie X, Urbaszek B 2009 Phys. Rev. Lett. 103 086601
[14]	Li W S, Sun B Q 2013 Acta Phys. Sin. 62 047801 (in Chinese) [李文生, 孙宝权 2013 62 047801]
[15]	Klimov V I, Ivanov S A, Nanda J, Achermann M, Bezel I, McGuire J A, Piryatinski A 2007 Nature 447 441
[16]	Dvorak M, Wei S H, Wu Z G 2013 Phys. Rev. Lett. 110 016402
[17]	Shen M, Bai Y K, An X T, Liu J J 2013 Chin. Phys. B 22 047101
[18]	Tudury H A P, Nakaema M K K, Iikawa F, Brum J A, Ribeiro E, Carvalho W, Jr, Bernussi A A, Gobbi A L 2001 Phys. Rev. B 64 153301
[19]	Kong D H, Zhu H L, Liang S, Qiu J F, Zhao L J 2012 Chin. Phys. Lett. 29 024201
[20]	Yin X, Wang H L, Gong Q, Feng S L 2013 Chinese J. Quantum Electron 30 236 (in Chinese) [尹新, 王海龙, 龚谦, 封松林 2013 量子电子学报 30 236]
[21]	Wang H L, Jiang L M, Gong Q, Feng S L 2010 Physica B 405 3818
[22]	Dacal L C O, Brum J A 2002 Phys. Rev. B 65 115324
[23]	Wu H T, Wang H L, Jiang L M, Gong Q, Feng S L 2009 Physica B 404 122
[24]	Sivalertporn K, Mouchliadis L, Ivanov A L, Philp R, Muljarov E A 2012 Phys. Rev. B 85 045207
[25]	Jiang L M, Wang H L, Wu H T, Gong Q, Feng S L 2008 Chin. Phys. Lett. 25 3017
[26]	Harrison P, Quantum Wells, Wires and Dots: Theoretical and Computational Physics of Semiconductor Nanostructure, 2nd ed (John Wiley & Sons, New York, 2005)
[27]	Li E H 2000 Physica E 5 215
[28]	Priester C, Allan G, Lannoo M 1984 Phys. Rev. B 30 7302
[29]	Haines M J L S, Ahmed N, Adams S J A, Mitchell K, Agool I R, Pidgeon C R, Cavenett B C, O’Reilly E P, Ghiti A, Emeny M T 1991 Phys. Rev. B 43 11944

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