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采用射频等离子体增强化学气相沉积技术, 研究了非晶硅锗薄膜太阳电池. 针对非晶硅锗薄膜材料的本身特性, 通过调控硅锗合金中硅锗的比例, 实现了对硅锗薄膜太阳电池中开路电压和短路电流密度的分别控制. 借助于本征层硅锗材料帯隙梯度的设计, 获得了可有效用于多结叠层电池中的非晶硅锗电池.
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关键词:
- 非晶硅锗薄膜太阳电池 /
- 短路电流密度 /
- 开路电压 /
- 带隙梯度
In this paper, we study hydrogenated amorphous silicon germanium thin film solar cells prepared by the radio frequency plasma-enhanced chemical vapor deposition. In the light of the inherent characteristics of hydrogenated amorphous silicon germanium material, the modulation of the germanium/silicon ratio in silicon germanium alloys can separately control open circuit voltage (Voc) and short circuit current density (Jsc) of a-SiGe:H thin film solar cells. By the structural design of band gap profiling in the amorphous silicon germanium intrinsic layer, hydrogenated amorphous silicon germanium thin film solar cells, which can be used efficiently as the component cell of multi-junction solar cells, are obtained.-
Keywords:
- hydrogenated amorphous silicon germanium solar cell /
- short circuit current density /
- open circuit voltage /
- band gap profiling
[1] Mackenzie K D, Eggert J R, Leopold D J, Li Y M, Lin S, Paul W 1985 Phys. Rev. B 31 2198
[2] Yan B, Yue G, Sivec L, Yang J, Guha S, Jiang C 2011 Appl. Phys. Lett. 99 113512
[3] Zhang X D, Zheng X X, Wang G H, Xu S Z, Yue Q, Lin Q, Wei C C, Sun J, Zhang D K, Xiong S Z, Geng X H, Zhao Y 2010 Acta Phys. Sin. 59 8231 (in Chinese) [张晓丹, 郑新霞, 王光红, 许盛之, 岳强, 林泉, 魏长春, 孙建, 张德坤, 熊绍珍, 耿新华, 赵颖 2010 59 8231]
[4] Zheng X X, Zhang X D, Yang S S, Wang G H, Xu S Z, Wei C C, Sun J, Geng X H, Xiong S Z, Zhao Y 2011 Acta Phys. Sin. 60 068801 (in Chinese) [郑新霞, 张晓丹, 杨素素, 王光红, 许盛之, 魏长春, 孙建, 耿新华, 熊绍珍, 赵颖 2011 60 068801]
[5] Zhang X D, Zheng X X, Xu S Z, Lin Q, Wei C C, Sun J, Geng X H, Zhao Y 2011 Chin. Phys. B 20 108801
[6] Han X Y, Hou G F, Zhang X D, Wei C C, Li G J, Zhang D K, Chen X L, Sun J, Zhang J J, Zhao Y, Geng X H 2009 Chin. Phys. B 18 3563
[7] Crandall R S 1983 J. Appl. Phys. 54 7176
[8] Matsuda A, Koyama M, Ikuchi N, Imanishi Y, Tanaka K 1986 J. Appl. Phys. 25 54
[9] Mahan A H, Menna P, Tsu R 1987 Appl. Phys. Lett. 51 1167
[10] Banerjee A, Xu X, Yang J, Guha S 1995 Appl. Phys. Lett. 67 2975
[11] Zimmer J, Stiebig H, Wagner H 1998 J. Appl. Phys. 84 611
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[1] Mackenzie K D, Eggert J R, Leopold D J, Li Y M, Lin S, Paul W 1985 Phys. Rev. B 31 2198
[2] Yan B, Yue G, Sivec L, Yang J, Guha S, Jiang C 2011 Appl. Phys. Lett. 99 113512
[3] Zhang X D, Zheng X X, Wang G H, Xu S Z, Yue Q, Lin Q, Wei C C, Sun J, Zhang D K, Xiong S Z, Geng X H, Zhao Y 2010 Acta Phys. Sin. 59 8231 (in Chinese) [张晓丹, 郑新霞, 王光红, 许盛之, 岳强, 林泉, 魏长春, 孙建, 张德坤, 熊绍珍, 耿新华, 赵颖 2010 59 8231]
[4] Zheng X X, Zhang X D, Yang S S, Wang G H, Xu S Z, Wei C C, Sun J, Geng X H, Xiong S Z, Zhao Y 2011 Acta Phys. Sin. 60 068801 (in Chinese) [郑新霞, 张晓丹, 杨素素, 王光红, 许盛之, 魏长春, 孙建, 耿新华, 熊绍珍, 赵颖 2011 60 068801]
[5] Zhang X D, Zheng X X, Xu S Z, Lin Q, Wei C C, Sun J, Geng X H, Zhao Y 2011 Chin. Phys. B 20 108801
[6] Han X Y, Hou G F, Zhang X D, Wei C C, Li G J, Zhang D K, Chen X L, Sun J, Zhang J J, Zhao Y, Geng X H 2009 Chin. Phys. B 18 3563
[7] Crandall R S 1983 J. Appl. Phys. 54 7176
[8] Matsuda A, Koyama M, Ikuchi N, Imanishi Y, Tanaka K 1986 J. Appl. Phys. 25 54
[9] Mahan A H, Menna P, Tsu R 1987 Appl. Phys. Lett. 51 1167
[10] Banerjee A, Xu X, Yang J, Guha S 1995 Appl. Phys. Lett. 67 2975
[11] Zimmer J, Stiebig H, Wagner H 1998 J. Appl. Phys. 84 611
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