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本文对静态随机存储器 (SRAM) 总剂量辐射引起的功能失效进行了六种不同测试图形下的测试. 利用不同测试图形覆盖的出错模式不同, 通过对比一定累积剂量下同一器件不同测试图形测试结果的差异, 以及对失效存储单元单独进行测试, 研究了总剂量辐照引起的SRAM器件功能失效模式. 研究表明: 器件的功能失效模式为数据保存错误 (Data retention fault) 且数据保存时间具有离散性, 引起数据保存错误的SRAM功能模块为存储单元. 通过对存储单元建立简化的等效电路图, 分析了造成存储单元数据保存错误以及保存时间离散性的原因, 并讨论了该失效模式对SRAM总剂量辐射功能测试方法的影响.In the present paper, function test of different test pattern was used to investigate function failure of static random access memory (SRAM) induced by the total dose effect. By comparing the function test results of different test pattern and single error bit, it is shown that the failure mode of the device is data retention fault, and different storage cell had diverse data retention time, the fault module of device is the storage cell. We discussed the reason for these phenomena in detail using simple circuit model of storage cell, and also analyzed the influence of these phenomena on test method to evaluate the total dose radiation damage of SRAM.
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Keywords:
- SRAM /
- function failure /
- test pattern /
- data retention fault
[1] Lu H, Yin F, Gao J 2005 Microprocessors 5 6 (in Chinese) [陆虹, 尹放, 高杰 2005 微机处理 5 6]
[2] Oldham T R, McLean F B 2003 IEEE Trans. Nucl. Sci. 50 483
[3] Francis P, Flandre D, Colinge J P 1995 IEEE Trans. Nucl. Sci. 42 83
[4] Aivars J L, Steven R M, Oldham T R, Robertson D N 1996 IEEE Trans. Nucl. Sci. 43 3103
[5] Robin H P, Joel J C, Robert L R, Keith W G 1986 IEEE Trans. Nucl. Sci. NS-33 1535
[6] Li M, Yu X F, Xue Y G, Lu J, Cui J W, Gao B 2012 Acta Phys. Sin. 61 106103 (in Chinese) [李明, 余学峰, 薛耀国, 卢健, 崔江维, 高博 2012 61 106103]
[7] Li M, Yu X F, Xu F Y, Li M S, Gao B, Cui J W, Zhou D, Xi S B, Wang F 2012 Atomic Energy Science and Technology 46 507 (in Chinese) [李明, 余学峰, 许发月, 李茂顺, 高博, 崔江维, 周东, 席善斌, 王飞 2012 原子能科学技术 46 507]
[8] He C H, Geng B, He B P, Yao Y J, Li Y H, Peng H L, Lin D S, Zhou H, Chen Y S 2004 Acta Phys. Sin. 53 194 (in Chinese) [贺朝会, 耿斌, 何宝平, 姚育娟, 李永宏, 彭宏论, 林东生, 周辉, 陈雨生 2004 53 194]
[9] Li M, Yu X F, Lu J, Gao B, Cui J W, Zhou D, Xu F Y, Xi S B, Wang F 2011 Nuclear Techniques 34 452 (in Chinese) [李明, 余学峰, 卢健, 高博, 崔江维, 周东, 许发月, 席善斌, 王飞 2011 核技术 34 452]
[10] Chumakov A I, Yanenko A V 1996 IEEE Trans. Nucl. Sci. 43(6) 3109
[11] Schwank J R, Dodd P E, Shaneyfelt M R 2004 IEEE Trans. Nucl. Sci. 51 3692
[12] Schwank J R, Shaneyfelt M R, Felix J A 2006 IEEE Trans. Nucl. Sci. 53 1772
[13] Jha N K, Gupta S Testing of Digital Systems (New York: Cambridge University Press)
[14] Dilillo L, Patrick G, Serge P 2005 VLSI Test Symposium, Proceedings. 23rd IEEE Palm Springs California May 1-5 183
[15] Oldham T R, McGamty J M, Lelis A J, Terrell J M 1992 Reliability Physics of VLSI Microelectronic Devices Harry Diamond Laboratories Report HDL-TR- 2203
[16] Huff H, Shimura F 1985 Silicon Material Criteria for VLSI Electronics Sol. St. Technology 103
[17] Oldham T R, Bennett K W 1993 IEEE Trans. Nucl. Sci. 40 1820
[18] Toshihiko H, Hirotada K, Shuji M 1990 IFEE Journal of Solid-Stat Circuits 25 1068
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[1] Lu H, Yin F, Gao J 2005 Microprocessors 5 6 (in Chinese) [陆虹, 尹放, 高杰 2005 微机处理 5 6]
[2] Oldham T R, McLean F B 2003 IEEE Trans. Nucl. Sci. 50 483
[3] Francis P, Flandre D, Colinge J P 1995 IEEE Trans. Nucl. Sci. 42 83
[4] Aivars J L, Steven R M, Oldham T R, Robertson D N 1996 IEEE Trans. Nucl. Sci. 43 3103
[5] Robin H P, Joel J C, Robert L R, Keith W G 1986 IEEE Trans. Nucl. Sci. NS-33 1535
[6] Li M, Yu X F, Xue Y G, Lu J, Cui J W, Gao B 2012 Acta Phys. Sin. 61 106103 (in Chinese) [李明, 余学峰, 薛耀国, 卢健, 崔江维, 高博 2012 61 106103]
[7] Li M, Yu X F, Xu F Y, Li M S, Gao B, Cui J W, Zhou D, Xi S B, Wang F 2012 Atomic Energy Science and Technology 46 507 (in Chinese) [李明, 余学峰, 许发月, 李茂顺, 高博, 崔江维, 周东, 席善斌, 王飞 2012 原子能科学技术 46 507]
[8] He C H, Geng B, He B P, Yao Y J, Li Y H, Peng H L, Lin D S, Zhou H, Chen Y S 2004 Acta Phys. Sin. 53 194 (in Chinese) [贺朝会, 耿斌, 何宝平, 姚育娟, 李永宏, 彭宏论, 林东生, 周辉, 陈雨生 2004 53 194]
[9] Li M, Yu X F, Lu J, Gao B, Cui J W, Zhou D, Xu F Y, Xi S B, Wang F 2011 Nuclear Techniques 34 452 (in Chinese) [李明, 余学峰, 卢健, 高博, 崔江维, 周东, 许发月, 席善斌, 王飞 2011 核技术 34 452]
[10] Chumakov A I, Yanenko A V 1996 IEEE Trans. Nucl. Sci. 43(6) 3109
[11] Schwank J R, Dodd P E, Shaneyfelt M R 2004 IEEE Trans. Nucl. Sci. 51 3692
[12] Schwank J R, Shaneyfelt M R, Felix J A 2006 IEEE Trans. Nucl. Sci. 53 1772
[13] Jha N K, Gupta S Testing of Digital Systems (New York: Cambridge University Press)
[14] Dilillo L, Patrick G, Serge P 2005 VLSI Test Symposium, Proceedings. 23rd IEEE Palm Springs California May 1-5 183
[15] Oldham T R, McGamty J M, Lelis A J, Terrell J M 1992 Reliability Physics of VLSI Microelectronic Devices Harry Diamond Laboratories Report HDL-TR- 2203
[16] Huff H, Shimura F 1985 Silicon Material Criteria for VLSI Electronics Sol. St. Technology 103
[17] Oldham T R, Bennett K W 1993 IEEE Trans. Nucl. Sci. 40 1820
[18] Toshihiko H, Hirotada K, Shuji M 1990 IFEE Journal of Solid-Stat Circuits 25 1068
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