-
结合环栅肖特基势垒金属氧化物半导体场效应管(MOSFET)结构, 通过求解圆柱坐标系下的二维泊松方程得到了表面势分布, 并据此建立了适用于低漏电压下的环栅肖特基势垒NMOSFET阈值电压模型.根据计算结果, 分析了漏电压、沟道半径和沟道长度对阈值电压和漏致势垒降低的影响, 对环栅肖特基势垒MOSFET器件以及电路设计具有一定的参考价值.
-
关键词:
- 环栅肖特基势垒金属氧化物半导体场效应管 /
- 二维泊松方程 /
- 阈值电压模型 /
- 漏致势垒降低
Based on surrounding-gate schottky barrier metal-oxide semiconductor field transistor (MOSFET) structure, the distribution of surface potential is obtained by solving two-dimensional Poisson equation in cylindrical coordinates, and the threshold voltage model of surrounding-gate schottky barrier NMOSFET which is applicable to the low voltage of drain is built. According to the calculation results, the dependences of threshold voltage and drain-induced barrier-lowering on voltage of drain, channel radius and channel length are studied in detail, which can provide some reference for the design of surrounding-gate schottky barrier MOSFET device and circuit.-
Keywords:
- surrounding-gate schottky barrier metal-oxide semiconductor field transistor /
- two-dimensional Poisson equation /
- threshold voltage model /
- drain-induced barrier-lowering
[1] Gan X W, Wang X S, Zhang X 2001 Chin. J. Semicond. 22 1581 (in Chinese) [甘学温, 王旭社, 张兴 2001 半导体学报 22 1581]
[2] Appenzeller J, Knoch J, Bjork M T, Riel H, Schmid H, Riess W 2008 IEEE Trans. Electron Dev. 55 2827
[3] Wang X Y, Zhang H M, Wang G Y, Song J J, Qin S S, Qu J T 2011 Acta Phys. Sin. 60 027102 (in Chinese) [王晓燕, 张鹤鸣, 王冠宇, 宋建军, 秦珊珊, 屈江涛 2011 60 027102]
[4] Li C, Zhuang Y Q, Han R, Zhang L, Bao J L 2012 Acta Phys. Sin. 61 078504 (in Chinese) [李聪, 庄奕琪, 韩茹, 张丽, 包军林 2012 61 078504]
[5] Knoch J, Zhang M, Mantl S, Appenzeller J 2006 IEEE Trans. Electron Dev. 53 1669
[6] Xu B J, Du G, Xia Z L, Zeng L, Han R Q, Liu X Y 2007 Chin. J. Semicond. 28 1179
[7] Li P C, Hu G X, Mei G H, Liu R, Jiang Y, Tang T G 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology Shanghai, 1-4 Nov. 2010 p3
[8] Tang X Y, Zhang Y M, Zhang Y M 2009 Acta Phys. Sin. 58 494 (in Chinese) [汤晓燕, 张义门, 张玉明 2008 58 494]
[9] Tang X Y 2007 Ph. D. Dissertation (Xi'an: Xidian University) (in Chinese) [汤晓燕 2007 博士学位论文 (西安: 西安电子科技大学)]
[10] Zhu S Y, Chen J D, Li M F, Lee S J, Singh J, Zhu C X, Du A, Tung C H, Chin A, Kwong D L 2004 IEEE Electron Dev. Lett. 25 567
[11] Shin M 2008 IEEE Trans. Electron Dev. 55 737
[12] Shi M, Wu G Y 2008 Physics of Semiconductor Devices (3rd Ed.) (Xi'an: Xi'an Jiaotong University Press) pp104-127 (in Chinese) [施敏, 伍国珏 2008 半导体器件物理(第3版)(西安: 西安交通大学出版社) 第104–127页]
[13] Snyder J P, Helms C R, Nishi Y 1999 Appl. Phys. Lett. 74 3407
[14] Zhu G J, Zhou X, Chin Y K, Pey K L, Zhang J B, See G H, Lin S H, Yan Y F, Chen Z H 2010 IEEE Trans. Electron Dev. 57 772
[15] Winstead B, Ravaioli U 2000 IEEE Trans. Electron Dev. 47 1241
[16] Sung D S, Ming L, Yun Y Y, Kyoung H Y, Keun H C, In K K, Hong C, Jang W J, Kim D W, Park D G, Lee W S 2007 IEEE International Electron Devices Meeting Washington D. C., 10-12 Dec. 2007 p891
-
[1] Gan X W, Wang X S, Zhang X 2001 Chin. J. Semicond. 22 1581 (in Chinese) [甘学温, 王旭社, 张兴 2001 半导体学报 22 1581]
[2] Appenzeller J, Knoch J, Bjork M T, Riel H, Schmid H, Riess W 2008 IEEE Trans. Electron Dev. 55 2827
[3] Wang X Y, Zhang H M, Wang G Y, Song J J, Qin S S, Qu J T 2011 Acta Phys. Sin. 60 027102 (in Chinese) [王晓燕, 张鹤鸣, 王冠宇, 宋建军, 秦珊珊, 屈江涛 2011 60 027102]
[4] Li C, Zhuang Y Q, Han R, Zhang L, Bao J L 2012 Acta Phys. Sin. 61 078504 (in Chinese) [李聪, 庄奕琪, 韩茹, 张丽, 包军林 2012 61 078504]
[5] Knoch J, Zhang M, Mantl S, Appenzeller J 2006 IEEE Trans. Electron Dev. 53 1669
[6] Xu B J, Du G, Xia Z L, Zeng L, Han R Q, Liu X Y 2007 Chin. J. Semicond. 28 1179
[7] Li P C, Hu G X, Mei G H, Liu R, Jiang Y, Tang T G 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology Shanghai, 1-4 Nov. 2010 p3
[8] Tang X Y, Zhang Y M, Zhang Y M 2009 Acta Phys. Sin. 58 494 (in Chinese) [汤晓燕, 张义门, 张玉明 2008 58 494]
[9] Tang X Y 2007 Ph. D. Dissertation (Xi'an: Xidian University) (in Chinese) [汤晓燕 2007 博士学位论文 (西安: 西安电子科技大学)]
[10] Zhu S Y, Chen J D, Li M F, Lee S J, Singh J, Zhu C X, Du A, Tung C H, Chin A, Kwong D L 2004 IEEE Electron Dev. Lett. 25 567
[11] Shin M 2008 IEEE Trans. Electron Dev. 55 737
[12] Shi M, Wu G Y 2008 Physics of Semiconductor Devices (3rd Ed.) (Xi'an: Xi'an Jiaotong University Press) pp104-127 (in Chinese) [施敏, 伍国珏 2008 半导体器件物理(第3版)(西安: 西安交通大学出版社) 第104–127页]
[13] Snyder J P, Helms C R, Nishi Y 1999 Appl. Phys. Lett. 74 3407
[14] Zhu G J, Zhou X, Chin Y K, Pey K L, Zhang J B, See G H, Lin S H, Yan Y F, Chen Z H 2010 IEEE Trans. Electron Dev. 57 772
[15] Winstead B, Ravaioli U 2000 IEEE Trans. Electron Dev. 47 1241
[16] Sung D S, Ming L, Yun Y Y, Kyoung H Y, Keun H C, In K K, Hong C, Jang W J, Kim D W, Park D G, Lee W S 2007 IEEE International Electron Devices Meeting Washington D. C., 10-12 Dec. 2007 p891
计量
- 文章访问数: 7471
- PDF下载量: 855
- 被引次数: 0
下载:
