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采用重掺杂的p型微晶硅来改善前电极掺硼氧化锌 (ZnO:B) 和窗口层p型非晶硅碳 (p-a-SiC) 之间的非欧姆接触特性. 通过优化插入层p型微晶硅的沉积参数 (氢稀释比H2/SiH4、硼掺杂比B2H6/SiH4) 获得了较薄厚度下 (20 nm) 暗电导率高达4.2 S/cm的p型微晶硅材料. 在本征层厚度约为150 nm, 仅采用Al背反射电极的情况下,获得了效率6.37%的非晶硅顶电池(Voc=911 mV, FF=71.7%, Jsc=9.73 mA/cm2), 开路电压Voc和填充因子FF均较无插入层的电池有大幅提升.Highly conductive p-type microcrystalline silicon thin layer is inserted between the front layer (ZnO:B) and the window layer(p-a-SiC) in a p-i-n amorphous silicon solar cell, and the inserted layer is found to be able to eliminate the non-ohmic contact, which is caused by the difference in the work function between the ZnO:B and p-a-SiC. The properties of the p-type microcrystalline silicon are studied by varying layer thickness, hydrogen dilution ratio and B2H6/SiH4 ratio. The optimized p-type microcrystalline silicon film can have a dark conductivity as large as 4.2 S/cm at a thickeness of 20 nm. The p-i-n type amorphous silicon solar cell with the p-type microcrystalline silicon is shown to have a good open circuit voltage and fill factor compared with without the p-type microcrystalline silicon layer.
[1] Aberle A G 2009 Thin solids Films 517 4706
[2] Green M A, Emery K, King D L, Hisikawa Y, Warta W 2006 Prog. Photovoltaics 14 45
[3] Benagli S, Borrello D, Sauvain E V, Meier J 2009 Proceedings of the 24th EU PVSE C Hamburg, Germany, September 21-24, 2009 p293
[4] Zhang X D, Zheng X X, Xu S Z, Lin Q, Wei C C, Sun J, Geng X H, Zhao Y 2011Chin. Phys. B 20 108801
[5] Ding L, Boccard M, Bugnon G, Benkhaira M, Nicolay S, Despeisse M, Meillaud F, Ballif C 2012 Sol. Energy Mater. Sol. Cells 98 331
[6] Meillaud F, Feltrin A, Despeisse M, Haug F J, Dominé D, Python M, Soderstrom T, Cuony P, Boccard M, Nicolay S, Ballif C 2011 Sol. Energy Mater. Sol. Cells 95 127
[7] Wanka H N, Schubert M B, Lotter E 1996 Sol. Energy Mater. Sol. Cells 41 519
[8] Yamamoto K, Yoshida H, Kokame K 2003 Proc. 3rd World Conf. on Photovoltaic Energy Conversion Osaka, Japan, May 17-20, 2003 S2O-B9-03
[9] Kroll U, Torres P, Meier J, Selvan J 2011 26th European Photovoltaic Solar Energy Conference and Exhibiton Hamburg, Germany, September 5-8, 2011 p2287
[10] Yunaz I A, Kasashima S, Inthisang S 2009 34th IEEE Photovoltaic Specialists Conference (PVSC) Philadelphia, USA, June 7-12, 2009 p001592
[11] Bailat J, Domine D, Schluchter R, Steinhauser J, Fay S, Freitas F 2000 31th IEEE Semiconductor Interface Specialists Conference (SISC) Sa Diego, USA, December 7-9, 2000 p1533
[12] Zhu F, Zeng K, Hu J, Shen L, Zhang K 2005 Mater. Res. Soc. Symp. Proc. 872 211
[13] Koval R J, Chen C, Ferreira G M, Ferlauto A S 2002 Appl. Phys. Lett. 81 1258
[14] Kondo M, Fukawa M, Guo L, Matsuda A 2002 J. Non Cryst. Solids 302 108
[15] Rath J K, Schropp R E I 1998 Solar Energy Materials and Solar Cells 53 189
[16] Shah A 2003 Thin Film Silicon Solar Cells (1st Edn.) (Switzerland: CRC Press) p311
[17] Ballif C, Meillaud F, Feltrin A, Billet A 2011 26th European Photovoltaic Solar Energy Conference and Exhibition Hamburg, Germany, September 5-8, 2011 p941
[18] Kobayashi T, Kawagishi T, Fukumuro N 2011 26th European Photovoltaic Solar Energy Conference and Exhibition Hamburg, Germany, September 5-8, 2011 p984
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[1] Aberle A G 2009 Thin solids Films 517 4706
[2] Green M A, Emery K, King D L, Hisikawa Y, Warta W 2006 Prog. Photovoltaics 14 45
[3] Benagli S, Borrello D, Sauvain E V, Meier J 2009 Proceedings of the 24th EU PVSE C Hamburg, Germany, September 21-24, 2009 p293
[4] Zhang X D, Zheng X X, Xu S Z, Lin Q, Wei C C, Sun J, Geng X H, Zhao Y 2011Chin. Phys. B 20 108801
[5] Ding L, Boccard M, Bugnon G, Benkhaira M, Nicolay S, Despeisse M, Meillaud F, Ballif C 2012 Sol. Energy Mater. Sol. Cells 98 331
[6] Meillaud F, Feltrin A, Despeisse M, Haug F J, Dominé D, Python M, Soderstrom T, Cuony P, Boccard M, Nicolay S, Ballif C 2011 Sol. Energy Mater. Sol. Cells 95 127
[7] Wanka H N, Schubert M B, Lotter E 1996 Sol. Energy Mater. Sol. Cells 41 519
[8] Yamamoto K, Yoshida H, Kokame K 2003 Proc. 3rd World Conf. on Photovoltaic Energy Conversion Osaka, Japan, May 17-20, 2003 S2O-B9-03
[9] Kroll U, Torres P, Meier J, Selvan J 2011 26th European Photovoltaic Solar Energy Conference and Exhibiton Hamburg, Germany, September 5-8, 2011 p2287
[10] Yunaz I A, Kasashima S, Inthisang S 2009 34th IEEE Photovoltaic Specialists Conference (PVSC) Philadelphia, USA, June 7-12, 2009 p001592
[11] Bailat J, Domine D, Schluchter R, Steinhauser J, Fay S, Freitas F 2000 31th IEEE Semiconductor Interface Specialists Conference (SISC) Sa Diego, USA, December 7-9, 2000 p1533
[12] Zhu F, Zeng K, Hu J, Shen L, Zhang K 2005 Mater. Res. Soc. Symp. Proc. 872 211
[13] Koval R J, Chen C, Ferreira G M, Ferlauto A S 2002 Appl. Phys. Lett. 81 1258
[14] Kondo M, Fukawa M, Guo L, Matsuda A 2002 J. Non Cryst. Solids 302 108
[15] Rath J K, Schropp R E I 1998 Solar Energy Materials and Solar Cells 53 189
[16] Shah A 2003 Thin Film Silicon Solar Cells (1st Edn.) (Switzerland: CRC Press) p311
[17] Ballif C, Meillaud F, Feltrin A, Billet A 2011 26th European Photovoltaic Solar Energy Conference and Exhibition Hamburg, Germany, September 5-8, 2011 p941
[18] Kobayashi T, Kawagishi T, Fukumuro N 2011 26th European Photovoltaic Solar Energy Conference and Exhibition Hamburg, Germany, September 5-8, 2011 p984
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