界面效应调制忆阻器研究进展

贾林楠; 黄安平; 郑晓虎; 肖志松; 王玫

doi:10.7498/aps.61.217306

摘要

忆阻器因其优异的非易失存储特性, 且具有结构简单、存储速度快、能耗低、集成度高等优势, 在新型电子器件研究领域引起了广泛关注. 本文从忆阻器结构出发, 对忆阻器主要材料、机理等进行了综述, 介绍了忆阻器在电子电路及人工智能等领域的研究进展, 重点讨论了界面效应对忆阻行为及性能改善等方面的重要作用, 提出了界面纳米点嵌入结构对优化忆阻性能的显著效果, 并分析了忆阻器可能的发展趋势.

关键词:

Because of its excellent non-volatile storage characteristics, simple structure, fast storage, low energy consumption and high integration, memristor has aroused a widespread interest in the field of new electronic devices. In this paper, metal-insulator-metal stack of memristor is introduced and relative memristive material, its mechanism as well as the application in the field of electronic circuits and artificial intelligence are summarized. The significant role of interfacial effects on memristive behavior and improvement of its performance is emphasized on. Especially, the effects of interface nanodots on the optimization of memristor properties are proposed. The research prospects of memristor are also analyzed and discussed.

Keywords:

作者及机构信息

1.
北京航空航天大学物理系, 北京 100191

基金项目: 国家自然科学基金(批准号: 51172009, 51172013, 11074020)、教育部新世纪优秀人才计划(批准号: NCET-08-0029)和高性能陶瓷和超微结构国家重点实验室开放课题基金(批准号: KL201209SIC)资助的课题.

Authors and contacts

1.
Department of Physics, Beihang University, Beijing 100191, China

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 51172009, 51172013, 11074020), the Program for New Century Excellent Talents in University (Grant No. NCET-08-0029), and the Opening Project of State Key Laboratory of High Performance Ceramics and Superfine Microstructure, China (Grant No. SKL201209SIC).

参考文献

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[48]	Zhang H W, Liu L F, Gao B, Qiu Y J, Liu X Y, Lu J, Han R Q, Kang J F, Yu B 2011 Appl. Phys. Lett. 98 042105
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[50]	Pershin Y V, Ventra M D 2011 Phys. Rev. E 84 046703
[51]	Xia Q F, Robinett W, Cumbie M W, Banerjee N, Cardinali T J, Yang J J, Wu W, Li X M, Tong W M, Strukov D B, Snider G S, Medeiros-Ribeiro G, Williams R S 2009 Nano Lett. 9 3640
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施引文献

[1]	Chua L O 1971 IEEE Trans. Circ. Th. 18 507
[2]	Strukov D B, Snider G S, Stewart D R, Williams R S 2008 Nature 453 80
[3]	Chua L O, Kang S M 1976 Proc. IEEE 64 209
[4]	Ventra M D, Pershin Y V 2011 Mater. Today 14 584
[5]	Pershin Y V, Fontaine S L, Ventra M D 2009 Phys. Rev. E 80 021926
[6]	Pershin Y V, Ventra M D 2010 Neur. Netw. 23 881
[7]	Bao B C, Hu X, Liu Z 2011 Acta Phys. Sin. 60 120502 (in Chinese) [包伯成, 胡许, 刘邹 2011 60 120502]
[8]	Yang J J, Zhang M X, Strachan J P, Miao F, Pickett M D, Kelley R D, Medeiros-Ribeiro G, Williams R S 2010 Appl. Phys. Lett. 97 232102
[9]	Lewis D L, Lee H H S 2009 Proceedings of IEEE International Conference on 3D System Integration San Francisco, United States, September 28-30, 2009 p1
[10]	Ickes N, Sinangil Y, Pappalardo F, Guidetti E, Chandrakasan A P 2011 Proceedings of the ESSCIRC Helsinki, Finland, September 12-16, 2011 p159
[11]	Lu W, Kim K H, Chang T, Siddharth G 2011 Proceedings of the16th Asia and South Pacific Design Automation Conference Yokohama, Japan, January 25-28, 2011 p217
[12]	Kavehei O, Iqbal A, Kim Y S, Eshraghian K, Al-Sarawi S F, Abbott D 2010 Proc. R. Soc. A 466 2175
[13]	Yang J J, Miao F, Pickett M D, Ohlberg D A A, Stewart D R, Lau C N, Williams R S 2009 Nanotechnology 20 215201
[14]	Li H, Liao Z M, Wu H C, Tian X X, Xu D S, Cross G L W, Duesberg G S, Shvets I V, Yu D P 2011 Nano Lett. 11 4601
[15]	Nagata T, Haemori M, Yamashita Y, Yoshikawa H, Iwashita Y, Kobayashi K, Chikyow T 2011 Appl. Phys. Lett. 99 223517
[16]	Jo S H, Lu W 2008 Nano Lett. 8 392
[17]	Liu C Y, Huang Y H, Ho J Y, Huang C C 2011 J. Phys. D: Appl. Phys. 44 205103
[18]	Wang D, Liu L, Kim Y, Huang Z, Pantel D, Hesse D, Alexe M 2011 Appl. Phys. Lett. 98 243109
[19]	Choi S J, Yang W, Kim K, Kyoung Y, Chung J, Bae H, Park J, Kim K K, Lee S, Cho S 2011 Electron. Mater. Lett. 7 313
[20]	Yan X B, Xia Y D, Xu H N, Gao X, Li H T, Li R, Yin J, Liu Z G 2010 Appl. Phys. Lett. 97 112101
[21]	Gang J L, Li S L, Meng Y, Liao Z L, Liang X J, Chen D M 2009 Acta Phys. Sin 58 5735 (in Chinese) [刚建雷, 黎松林, 孟洋, 廖昭亮, 梁学锦, 陈东敏 2009 58 5735]
[22]	Lü Q B, Wu S X, Lu J Q, Yang M, Hu P, Li S W 2011 J. Appl. Phys. 110 104511
[23]	Sozt K, Roagla M, Speier M, Klusek Z, Besmehn A, Wafer R 2011 Nanotechnology 22 254001
[24]	Strachan J P, Medeiros-Ribeiro G, Yang J J, Zhang M X, Miao F, Goldfarb I, Holt M, Rose V, Williams R S 2011 Appl. Phys. Lett. 98 242114
[25]	Meijer G I 2008 Science 319 1625
[26]	Driscoll T, Kim H T, Chae B G, Ventra M D, Basov D N 2009 Appl. Phys. Lett. 95 043503
[27]	Narayan J, Bhosle V M 2006 J. Appl. Phys. 100 103524
[28]	Shi M, Wu G Y (Translated by Geng L, Zhang R Z) 2008 Physics of Semiconductor Devices (Xi'an: Xi'an Jiaotong University Press) pp103-114 (in Chinese) [施敏, 伍国珏著 (耿莉, 张瑞智译) 2008 半导体器件物理 (西安: 西安交通大学出版社) 第103—114页]
[29]	Zheng X H, Huang A P, Yang Z C, Xiao Z S, Wang M, Cheng G A 2011 Acta Phys. Sin. 60 017702 (in Chinese) [郑晓虎, 黄安平, 杨智超, 肖志松, 王玫, 程国安 2011 60 017702]
[30]	Pantisano L, Afanas'ev V V, Cimino S, Adelmann C, Goux L, Chen Y Y, Kittl J A, Wouters D, Jurczak M 2011 Microelectron. Eng. 88 1251
[31]	Akihito S 2008 Mater. Today 11 28
[32]	Pershin Y V, Ventra M D 2008 Phys. Rev. B 78 113309
[33]	Yu S, Guan X, Wong H S P 2011 Appl. Phys. Lett. 99 063507
[34]	Yang J J, Kobayashi N P, Strachan J P, Zhang M X, Ohlberg D A A, Pickett M D, Li Z, Medeiros-Ribeiro G, Williams R S 2011 Chem. Mater. 23 123
[35]	Yang J J, Strachan J P, Miao F, Zhang M X, Pickett M D, Yi W, Ohlberg D, Medeiros-Ribeiro G, Williams R S 2011 Appl. Phys. A 102 785
[36]	Lü H B, Tang T G 2010 IEEE Electron Dev. Lett. 31 1464
[37]	Xia Q F, Pickett M D, Yang J J, Zhang M X, Borghetti J, Li X M, Wu W, Medeiros-Ribeiro G, Williams R S 2011 Nanotechnology 22 254026
[38]	Xia Q F, Yang J J, Wu W, Li X M, Williams R S 2010 Nano Lett. 10 2909
[39]	Li Y T, Long S B, Liu Q, Lü H B, Liu S, Liu M 2011 Chinese Sci. Bull. 56 3072
[40]	Kwak J S, Do Y H, Bae Y C, Im H S, Yoo J H, Sung M G, Hwang Y T, Hong J P 2010 Appl. Phys. Lett. 96 223502
[41]	Jie S, Lind E, Maximov I, Xu H Q 2011 IEEE Electron Dev. Lett. 32 131
[42]	Lee H Y, Chen P S, Wu T Y, Chen Y S, Chen F, Wang C C, Tzeng P J, Lin C H, Tsai M J, Lien C 2009 IEEE Electron Dev. Lett. 30 703
[43]	Lee D Y, Tseng T Y 2011 J. Appl. Phys. 110 114117
[44]	Wu M C, Wu T H, Tseng T Y 2012 J. Appl. Phys. 111 014505
[45]	Zhang H W, Gao B, Sun B, Chen G P, Zeng L, Liu L F, Liu X Y, Lu J, Han R Q, Kang J F, Yu B 2010 Appl. Phys. Lett. 96 123502
[46]	Gao B, Zhang H W, Yu S, Sun B, Liu L F, Liu X Y, Wang Y, Han R Q, Kang J F, Yu B, Wang Y Y 2009 Proceedings of the 2009 Symposium on VLSI Technology Honollulu, HI, June 16-18, 2009 p30
[47]	Lee S B, Kim A, Lee J S, Chang S H, Yoo H K, Noh T W, Kahng B, Lee M J, Kim C J, Kang B S 2010 Appl. Phys. Lett. 97 093505
[48]	Zhang H W, Liu L F, Gao B, Qiu Y J, Liu X Y, Lu J, Han R Q, Kang J F, Yu B 2011 Appl. Phys. Lett. 98 042105
[49]	Pershin Y V, Ventra M D 2012 Proceedings of the IEEE 100 2071
[50]	Pershin Y V, Ventra M D 2011 Phys. Rev. E 84 046703
[51]	Xia Q F, Robinett W, Cumbie M W, Banerjee N, Cardinali T J, Yang J J, Wu W, Li X M, Tong W M, Strukov D B, Snider G S, Medeiros-Ribeiro G, Williams R S 2009 Nano Lett. 9 3640
[52]	Takechi H, Eilers J, Konnerth A 1998 Nature 396 757
[53]	Chang T, Jo S H, Lu W 2011 ACS Nano. 5 7669
[54]	Jo S H, Chang T, Ebong I, Bhadviya B B, Mazumder P, Lu W 2010 Nano Lett. 10 1297
[55]	Hasegawa T, Ohno T, Terabe K, Tsuruoka T, Nakayama T, Gimzewski J K, Aono M 2010 Adv. Mater. 22 1831

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