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通过分析部分耗尽绝缘层附着硅互补金属氧化物半导体静态随机存储器(SRAM)在动态偏置条件下的电学参数和功能参数随累积剂量的变化规律, 研究了绝缘层附着硅(SOI)工艺SRAM器件在60Co-γ射线辐照后的总剂量辐射损伤效应及器件敏感参数与功能错误数之间的相关性,为进一步深入研究大规模SOI集成电路的抗总剂量辐射加固及其辐射损伤评估提供了可能的途径和方法.实验结果表明:辐射引起的场氧和埋氧漏电是功耗电流增大的主要原因; 阈值电压漂移造成输出高电平下降、低电平微小上升和峰-峰值大幅降低,以及传输延迟增大; 当总剂量累积到一定程度,逻辑功能因关断功能的失效而出现突变错误; 传输延迟和输出高电平与逻辑功能错误之间存在一定相关性.
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关键词:
- 部分耗尽绝缘层附着硅 /
- 静态随机存储器 /
- 总剂量效应 /
- 功耗电流
In this paper, the changes of electrical parameters and their functional errors with the total radiation dose are studied, when the PDSOI static random access memory (SRAM) is irradiated under different total doses. After the SOI SRAM is irradiated by the 60Co-γ ray, the total dose radiation damage mechanism and the correlation between the changes of device parameters and function errors are discussed. For the large-scale SOI integrated circuits, this provides a possible method to further study the total dose radiation hardening and the radiation damage assessment of the devices. It is indicated that the increase of current consumption is due mainly to the radiation-induced leakage current from both field oxygen and buried oxide. The drift of threshold voltage creates the decline in output high level, the slight increase in output low level, the significant reduction in peak-peak value, and the increase of transmission delay. When the total dose accumulates and reaches a certain amount of dose, the logic mutation error emerges, resulting in the failure of shutdown function. There is a certain correlation between the transmission delay, the output high and the logic error.-
Keywords:
- partial-depletion-silicon-on insulator /
- static random access memory /
- total-dose effects /
- power supply current
[1] Liu X Y, Liu Y L, Sun H F, Wu D X, He Z J, Liu Z L 2002 Chin. J. Semiconductors 23 213 (in Chinese) [刘新宇, 刘运龙, 孙海锋, 吴德馨, 和致经, 刘忠立 2002 半导体学报 23 213]
[2] Liu S T, Golke K W, Anthony D 2003 IEEE Trans. Nucl. Sci. 50 2095
[3] Liu H Y, Liu M S, Hughes H L 2006 IEEE Trans. Nucl. Sci. 53 3502
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[5] Han Z S 2007 China Electronics News C01 (in Chinese) [韩郑生 2007 中国电子报 C01]
[6] Liu S T, Heikkila W W, Golke K W, Anthony D, Hurst A, Kirchner G, Jenkins W C, Hughes H L, Mitra S, Ioannou D E 2003 IEEE Trans. Nucl .Sci. 50 2095
[7] Brady F T, Brown R, Rockett L, Vasquez J 1998 IEEE Trans. Nucl. Sci. 45 2436
[8] Fecher P S, Dougal G D, Sullwold J G 1997 IEEE Trans. Nucl. Sci. 44 172
[9] Guo T L, Zhao F Z, Liu G, Li D L, Li J, Zhao L X, Zhou X Y, Hai C H, Han Z S 2007 Chin. J. Semiconductors 28 1184 (in Chinese) [郭天雷, 赵发展, 刘刚, 李多力, 李静, 赵立新, 周小茵, 海潮和, 韩郑生 2007 半导体学报 28 1184]
[10] Zhao K, Liu Z L, Yu F, Gao J T, Xiao Z Q, Hong G S 2007 Chin. J. Semiconductors 28 1139 (in Chinese) [赵凯, 刘忠立, 于芳, 高见头, 肖志强, 洪根深 2007 半导体学报 28 1139]
[11] Guo T L, Han Z S, Hai C H, Zhou X Y, Li D L, Zhao L X 2007 Chin. J. Electron Dev. 30 794 (in Chinese) [郭天雷, 韩郑生, 海潮和, 周小茵, 李多力, 赵立新 2007 电子器件 30 794]
[12] Li M, Yu X F, Lu J, Gao B, Cui J W, Zhou D, Xu F Y, Xi S B, Wang F 2011 Nucl. Tech. 34 452 (in Chinese) [李明, 余学峰, 卢健, 高博, 崔江维, 周东, 许发月, 席善斌, 王飞 2011 核技术 34 452]
[13] Gao B, Yu X F, Ren D Y, Li Y D, Cui J W, Li M S, Li M, Wang Y Y 2011 Acta Phys. Sin. 60 036106 (in Chinese) [高博, 余学峰, 任迪远, 李豫东, 崔江维, 李茂顺, 李明, 王义元 2011 60 036106]
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[1] Liu X Y, Liu Y L, Sun H F, Wu D X, He Z J, Liu Z L 2002 Chin. J. Semiconductors 23 213 (in Chinese) [刘新宇, 刘运龙, 孙海锋, 吴德馨, 和致经, 刘忠立 2002 半导体学报 23 213]
[2] Liu S T, Golke K W, Anthony D 2003 IEEE Trans. Nucl. Sci. 50 2095
[3] Liu H Y, Liu M S, Hughes H L 2006 IEEE Trans. Nucl. Sci. 53 3502
[4] Baggio J, Ferlet-cavrois V, Lambert D, Paillet P, Wrobel F, Hirose K, Saito H, Blckmore E W 2005 IEEE Trans. Nucl. Sci. 52 2319
[5] Han Z S 2007 China Electronics News C01 (in Chinese) [韩郑生 2007 中国电子报 C01]
[6] Liu S T, Heikkila W W, Golke K W, Anthony D, Hurst A, Kirchner G, Jenkins W C, Hughes H L, Mitra S, Ioannou D E 2003 IEEE Trans. Nucl .Sci. 50 2095
[7] Brady F T, Brown R, Rockett L, Vasquez J 1998 IEEE Trans. Nucl. Sci. 45 2436
[8] Fecher P S, Dougal G D, Sullwold J G 1997 IEEE Trans. Nucl. Sci. 44 172
[9] Guo T L, Zhao F Z, Liu G, Li D L, Li J, Zhao L X, Zhou X Y, Hai C H, Han Z S 2007 Chin. J. Semiconductors 28 1184 (in Chinese) [郭天雷, 赵发展, 刘刚, 李多力, 李静, 赵立新, 周小茵, 海潮和, 韩郑生 2007 半导体学报 28 1184]
[10] Zhao K, Liu Z L, Yu F, Gao J T, Xiao Z Q, Hong G S 2007 Chin. J. Semiconductors 28 1139 (in Chinese) [赵凯, 刘忠立, 于芳, 高见头, 肖志强, 洪根深 2007 半导体学报 28 1139]
[11] Guo T L, Han Z S, Hai C H, Zhou X Y, Li D L, Zhao L X 2007 Chin. J. Electron Dev. 30 794 (in Chinese) [郭天雷, 韩郑生, 海潮和, 周小茵, 李多力, 赵立新 2007 电子器件 30 794]
[12] Li M, Yu X F, Lu J, Gao B, Cui J W, Zhou D, Xu F Y, Xi S B, Wang F 2011 Nucl. Tech. 34 452 (in Chinese) [李明, 余学峰, 卢健, 高博, 崔江维, 周东, 许发月, 席善斌, 王飞 2011 核技术 34 452]
[13] Gao B, Yu X F, Ren D Y, Li Y D, Cui J W, Li M S, Li M, Wang Y Y 2011 Acta Phys. Sin. 60 036106 (in Chinese) [高博, 余学峰, 任迪远, 李豫东, 崔江维, 李茂顺, 李明, 王义元 2011 60 036106]
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