有机器件电流自旋极化放大性质研究

窦兆涛; 任俊峰; 王玉梅; 原晓波; 胡贵超

doi:10.7498/aps.61.088503

摘要

基于自旋扩散漂移方程,考虑到电场的影响及有机半导体中特殊的载流子电荷自旋关系, 对一个简单的T型结构有机自旋器件模型进行了理论研究,得出了此有机器件的电流自旋极化放大率表达式.研究表明,器件中极化子比率、电场和电流密度都会影响器件的电流自旋极化放大率,通过调节此有机器件的电场和极化子比率可以获得较大的电流自旋极化放大率.

关键词:

Using the spin diffusion-drift equation and considering the effects of the electric fields and the special carriers in organic semiconductors, the enlargement ratio of current spin polarization in a simple T-shaped organic spintronic device is theoretically studied. It is found that the significant enlargement ratio of the current spin polarization can be acquired by adjusting the electric field and the polaron ratio in organic semiconductor.

Keywords:

organic spintronics /
spin injection /
enlargement of current spin polarization

作者及机构信息

1.
山东师范大学物理与电子科学学院, 济南 250014

基金项目: 国家自然科学基金 (批准号: 10904083, 10904084)、山东省优秀中青年科学家科研奖励基金(批准号: BS2009CL008) 和山东省高等学校科技奖励计划(批准号: J09LA03)资助的课题.

Authors and contacts

1.
College of Physics and Electronics, Shandong Normal University, Jinan 250014, China

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 10904083, 10904084), the Distinguished Middle-Aged and Young Scientist Encourage and Reward Foundation of Shandong Province, China (Grant No. BS2009CL008), and the Science and Technology Reward Program of Institution of Higher Education of Shandong Province, China (Grant No. J09LA03).

参考文献

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施引文献

[1]	Baibich M N, Broto J M, Fert A, Nguyen F D V, Petroff F, Etienne P, Creuzet G, Friederich A, Chazelas J 1988 Phys. Rev. Lett. 61 2472
[2]
[3]	Barnas J, Fuss A, Camley R E, Grnberg P, Zinn W 1990 Phys. Rev. B 42 8110
[4]
[5]	Wolf S A, Awschalom D D, Buhrman R A, Daughton J M, Molnr S V, Roukes M L, Chtchelkanova A Y, Treger D M 2001 Science 294 1488
[6]
[7]	Friend R H, Gymer R W, Holmes A B, Burroughes J H, Marks R N, Taliani C, Bradley D D C, Dos Santos D A, Brdas J L, Lgdlund M, Salaneck W R 1999 Nature 397 121
[8]
[9]	Forrest S, Burrows P, Thompson M 2000 IEEE Spectr. 37 29
[10]
[11]
[12]	Chen H M, Jin B S 2010 Micronanoelectron. Technol. 47 470 (in Chinese) [陈海明, 靳宝善 2010 微纳电子技术 47 470]
[13]	Wang L X, Zhang D C, Liu D S, Han S H, Xie S J 2003 Acta Phys. Sin. 52 2547 (in Chinese) [王鹿霞, 张大成, 刘德胜, 韩圣浩, 解士杰 2003 52 2547]
[14]
[15]	Wang L X, Liu D S, Xie S J 2002 Acta Phys. Sin. 51 362 (in Chinese) [王鹿霞, 刘德胜, 解士杰 2002 51 362]
[16]
[17]	Fu J Y, Ren J F, Liu D S, Xie S J 2004 Acta Phys. Sin. 53 1989 (in Chinese) [付吉永, 任俊峰, 刘德胜, 解士杰 2004 53 1989]
[18]
[19]	Naber W J M, Faez S, Gvander Wie W 2007 J. Phys. D 40 R205
[20]
[21]	Dediu V, Murgia M, Matacotta F C, Taliani C, Barbanera S 2002 Solid State Commun. 122 181
[22]
[23]
[24]	Xiong Z H, Wu D, Vardeny Z V, Shi J 2004 Nature 427 821
[25]	Majumdar S, Laiho R, Laukkanen P, Vyrynen I J, Majumdar H S, sterbacka R 2006 Appl. Phys. Lett. 89 122114
[26]
[27]
[28]	Drew A J, Hoppler J, Schulz L, Pratt F L, Desai P, Shakya P, Kreouzis T, Gillin W P, Suter A, Morley N A, Malik V K, Dubroka A, Kim K W, Bouyanfif H, Bourqui F, Bernhard C, Scheuemann R, Nieuwenhuys G J, Prokscha T, Morenzoni E 2009 Nature 8 109
[29]
[30]	Li C H, van 't Erve O M J, Jonker B T 2011 Nat. Commun. 2 245
[31]
[32]	Xie S J, Ahn K H, Smith D L, Bishop A R, Saxena A 2003 Phys. Rev. B 67 125202
[33]	Fu J Y, Ren J F, Liu X J, Xie S J 2006 Phys. Rev. B 73 195401
[34]
[35]	Ruden P P, Smith D L 2004 J. Appl. Phys. 95 4898
[36]
[37]	Yu Z G, Berding M A, Krishnamurthy S 2005 J. Appl. Phys. 97 024510
[38]
[39]	Yu Z G, Berding M A, Krishnamurthy S 2005 Phys. Rev. B 71 060408
[40]
[41]	Yunus M, Ruden P P, Smith D L 2008 J. Appl. Phys. 103 103714
[42]
[43]
[44]	Ren J F, Fu J Y, Liu D S, Mei L M, Xie S J 2005 J. Appl. Phys. 98 074503
[45]
[46]	Mi Y L, Zhang M, Yan H 2008 Phys. Lett. A 372 6434
[47]
[48]	Jung S W, Lee H W 2006 Phys. Rev. B 73 165302
[49]	Yu Z G, Flatt M E 2002 Phys. Rev. B 66 201202(R)
[50]
[51]	Yu Z G, Flatt M E 2002 Phys. Rev. B 66 235302
[52]
[53]
[54]	Aronov A G, Pikus G E 1976 Fiz. Tekh. Poluprovodn. 10 1177
[55]	Ren J F, Zhang Y B, Xie S J 2008 Org. Electron. 9 1017
[56]
[57]	Xiu M X, Ren J F, Wang Y M 2010 J. At. Mol. Phys. 27 353

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