-
在GaAs吸收带边附近, 利用磁光Kerr效应测量了(Ga,Mn)As和p-GaAs样品的电流诱导Kerr旋转谱和反射谱, 两者都呈现出Lorentz曲线形状. 电流诱导Kerr旋转角和反射率随着电流的增大而增大, Kerr角与电流的大小成正比关系, 反射率与电流的平方成正比关系. (Ga,Mn)As的Kerr旋转角比p-GaAs的大了一个数量级, 这说明Mn原子的掺杂使得电流诱导的自旋极化增强. 另外, 还测量了温度和入射光偏振方向对电流诱导Kerr旋转谱和反射谱的影响. 发现随着温度的升高, Kerr谱和反射谱均向长波方向移动, 这与GaAs带边随温度的变化是一致的.Current-induced Kerr rotation spectra and reflectivity spectra of (Ga,Mn)As and p-GaAs were measured in the absence of the magnetic field via magneto-optic Kerr effect around the energy gap. The dependence of the Kerr rotation and the reflectivity on the laser wavelength show Lorentzian profile. The Kerr rotation depends linearly on the current and the reflectivity depends linearly on the square of the current. The Kerr rotation of P-GaAs is much weaker than that of the (Ga,Mn)As which indicate that the doping of Mn enhance the current-induced spin polarization . The dependence of the Kerr rotation and the reflectivity on the temperature was also measured, both showing red shift of their Lorentzian peaks, a familiar behavior as the absorption edge of GaAs. In addition, we observed the dependence of the Kerr signal on the polarizational direction of the incident beam.
[1] Zutic I, Fabian J, Das Sarma S 2004 Rev. Mod. Phys. 76 323
[2] Awschalom D D, Flatte M 2007 Nature Phys. 3 153
[3] Awschalom D D, Loss D, Samarth N 2002 Semiconductor Spintronics and Quantum Computation (Berlin: Springer)
[4] Wolf S A, Awschalom D D, Buhrman R A, Daughton J M, Molnár S V, Roukes M L, Chtchelkanova A Y, Treger D M 2001 Science 294 1488
[5] Dyakonov M I 2008 Spin Physics in Semiconductors (Berlin: Springer)p1
[6] Joffre M, Hulin D, Migus A, Combescot M 1989 Phys. Rev. Lett. 62 74
[7] Gupta J A, Knobel R, Samarth N, Awschalom D D 2001 Science 292 2458
[8] Ren J F, Zhang Y B, Xie S J 2007 Acta Phys. Sin. 56 4785 (in Chinese)[任俊峰,张玉滨, 解士杰 2007 56 4785]
[9] Kato Y K, Myers R C, Gossard A C, Awschalom D D 2004 Phys. Rev. Lett. 93 176601
[10] Stern N P, Ghosh S, Xiang G, Zhu M, Samarth N, Awschalom D D 2006 Phys. Rev. Lett. 97 126603
[11] Koshihara S, Oiwa A, Hirasawa M, Katsumoto S, Iye Y, Urano C, Munekata H 1997 Phys. Rev. Lett. 78 4617
[12] Liu X D,WangWZ, Gao R X, Zhao J H,Wen J H, LiuWZ, Lai T S 2008 Acta phys. Sin. 57 3857 (in Chinese)[刘晓东, 王玮竹, 高瑞鑫, 赵建华, 文锦辉, 林位株, 赖天树 2008 57 3857]
[13] Oiwa A, Mitsumori Y, Moriya R, Slupinski T, Munekata H 2002 Phys. Rev. Lett. 88 137202
[14] Ganichev S D, Danilov S N, Schneider P, Bel’kov V V, Golub L E, Wegscheider W, Weiss D, Prettl W 2006 J. Magn. Magn. Mater. 300 127
[15] Silov A Y, Blajnov P A, Wolter J H, Hey R, Ploog K H, Averkiev N S 2004 Appl. Phys. Lett. 85 5929
[16] Edelstein V M 1990 Solid State Commun. 73 233
[17] Dresselhaus G 1955 Phys. Rev. B 100 580
[18] Bychkov Y A, Rashba E I 1984 J. Phys. C 17 6039
[19] Inoue J, Bauer G E W, Molenkamp L W 2003 Phys. Rev. B 67 033104
[20] Yang C L, He H T, Ding L, Cui L J, Zeng Y P,Wang J N, GeWK 2006 Phys. Rev. Lett. 96 186605
[21] Kato Y K, Myers R C, Gossard A C, Awschalom D D 2004 Science 306 1910
[22] Shen X C 2002 The Spectrum and Optical Property of Semiconductor (Beijing: Science Press)p168 (in Chinese)[沈学础 2002 半导体光谱和光学性质 (北京: 科学出版社)第168页]
[23] Sydor M, Angelo J, Mitchel W, Haas T, Yen M Y 1989 J. Appl. Phys. 66 155
[24] Bergqvist L, Smirnova E A, Mohn P, Svedlindh P, Eriksson O 2003 Phys. Rev. B 67 205201
-
[1] Zutic I, Fabian J, Das Sarma S 2004 Rev. Mod. Phys. 76 323
[2] Awschalom D D, Flatte M 2007 Nature Phys. 3 153
[3] Awschalom D D, Loss D, Samarth N 2002 Semiconductor Spintronics and Quantum Computation (Berlin: Springer)
[4] Wolf S A, Awschalom D D, Buhrman R A, Daughton J M, Molnár S V, Roukes M L, Chtchelkanova A Y, Treger D M 2001 Science 294 1488
[5] Dyakonov M I 2008 Spin Physics in Semiconductors (Berlin: Springer)p1
[6] Joffre M, Hulin D, Migus A, Combescot M 1989 Phys. Rev. Lett. 62 74
[7] Gupta J A, Knobel R, Samarth N, Awschalom D D 2001 Science 292 2458
[8] Ren J F, Zhang Y B, Xie S J 2007 Acta Phys. Sin. 56 4785 (in Chinese)[任俊峰,张玉滨, 解士杰 2007 56 4785]
[9] Kato Y K, Myers R C, Gossard A C, Awschalom D D 2004 Phys. Rev. Lett. 93 176601
[10] Stern N P, Ghosh S, Xiang G, Zhu M, Samarth N, Awschalom D D 2006 Phys. Rev. Lett. 97 126603
[11] Koshihara S, Oiwa A, Hirasawa M, Katsumoto S, Iye Y, Urano C, Munekata H 1997 Phys. Rev. Lett. 78 4617
[12] Liu X D,WangWZ, Gao R X, Zhao J H,Wen J H, LiuWZ, Lai T S 2008 Acta phys. Sin. 57 3857 (in Chinese)[刘晓东, 王玮竹, 高瑞鑫, 赵建华, 文锦辉, 林位株, 赖天树 2008 57 3857]
[13] Oiwa A, Mitsumori Y, Moriya R, Slupinski T, Munekata H 2002 Phys. Rev. Lett. 88 137202
[14] Ganichev S D, Danilov S N, Schneider P, Bel’kov V V, Golub L E, Wegscheider W, Weiss D, Prettl W 2006 J. Magn. Magn. Mater. 300 127
[15] Silov A Y, Blajnov P A, Wolter J H, Hey R, Ploog K H, Averkiev N S 2004 Appl. Phys. Lett. 85 5929
[16] Edelstein V M 1990 Solid State Commun. 73 233
[17] Dresselhaus G 1955 Phys. Rev. B 100 580
[18] Bychkov Y A, Rashba E I 1984 J. Phys. C 17 6039
[19] Inoue J, Bauer G E W, Molenkamp L W 2003 Phys. Rev. B 67 033104
[20] Yang C L, He H T, Ding L, Cui L J, Zeng Y P,Wang J N, GeWK 2006 Phys. Rev. Lett. 96 186605
[21] Kato Y K, Myers R C, Gossard A C, Awschalom D D 2004 Science 306 1910
[22] Shen X C 2002 The Spectrum and Optical Property of Semiconductor (Beijing: Science Press)p168 (in Chinese)[沈学础 2002 半导体光谱和光学性质 (北京: 科学出版社)第168页]
[23] Sydor M, Angelo J, Mitchel W, Haas T, Yen M Y 1989 J. Appl. Phys. 66 155
[24] Bergqvist L, Smirnova E A, Mohn P, Svedlindh P, Eriksson O 2003 Phys. Rev. B 67 205201
计量
- 文章访问数: 7407
- PDF下载量: 414
- 被引次数: 0
下载:
