Ge组分对应变Si1-xGe x 沟道p-MOSFET电学特性影响

杨洲; 王茺; 王洪涛; 胡伟达; 杨宇

doi:10.7498/aps.60.077102

摘要

利用二维数值模拟方法,研究了不同Ge组分应变Si1-xGe x 沟道p-MOSFET的电容-电压特性以及阈值电压的变化情况.计算结果表明:提高应变Si1-xGe x 沟道层中的Ge组分,器件亚阈值电流明显增大;栅电容在器件进入反型状态时产生显著变化;阈值电压的改变量与Ge组分基本成线性关系.通过改变Si1-xGe x 沟道的长度,并结

关键词:

The capacitance-voltage characteristics and the variations of threshold voltage of strained Si1-xGe x channel p-MOSFET with Ge fraction are investigated via two-dimansional numerical simulation. The results indicate that with the increase of Ge fraction, the subthreshold current increases remarkably, and that the gate capacitance changes significantly when the device is in inversion, moreover, the Ge fraction dependence of the variation of threshold voltage is linear. Combining the change of the Si1-xGex channel length with the relevant physical model, the mobility of holes in channel is demonstrated to be inversely proportional to the derivative of the total resistances with respect to the channel length in a weak applied field.

Keywords:

作者及机构信息

(1)云南大学光电信息材料研究所,昆明 650091; (2)中国科学院上海技术物理研究所,红外物理国家重点实验室,上海 200083

基金项目: 国家自然科学基金(批准号:10964016, 60567001),教育部科学技术研究重点项目(批准号:210207)和云南省自然基金重点项目(批准号:2008CC012)资助的课题.

Authors and contacts

(1)Institute for Optoelectronic Information Materials, Yunnan University, Kunming 650091, China; (2)National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

参考文献

[1]	Nayak D K, Woo J C S, Park J S, Wang K L, Macwilliams K P 1991 IEEE Electron Device Letters 12 154
[2]	Li J, Liu H X, Li B, Gao L, Yuan B 2010 Chin. Phys. B 19 107301
[3]	Qin S S, Zhang H M, Hu H Y, Dai X Y, Xuan R X, Shu B 2010 Chin. Phys. B 19 37201
[4]	Du G, Liu X Y, Xia Z L, Yang J F, Han R Q, 2010 Chin. Phys. B 19 57304
[5]	Zhang H M, Cui X Y, Hu H Y, Dai X Y, Xuan X R 2007 Acta Phys. Sin. 56 3504 (in Chinese) [张鹤鸣、崔晓英、胡辉勇、戴显英、宣荣喜 2007 56 3504]
[6]	Bindu B, DasGupta N, DasGupta A 2006 IEEE Trans. Electron Devices 53 1411
[7]	Lukic P M, Ramovic R M, Sasic R M 2006 25th International Conference on Microelectronics, Belgrade, May 14—17, 2006 p472
[8]	Fiorenza J G, Park J S, Lochtefeld A 2008 IEEE Trans. Electron Devices 55 640
[9]	Lee S H, Majhi P, Jungwoo O, Sassman B, Young C, Bowonder A, Loh W Y, Choi K J, Cho B J, Lee H D, Kirsch P, Harris H R, Tsai W, Satta S, Tseng H H, Banerjee S K, Jammy R 2008 IEEE Electron Device Letters 29 1017
[10]	Yang R, Luo J S, Tub J, Zhang R Z 2004 Microelectronics Journal 35 145
[11]	Shinobu T, Masao S, Junichi M, Toshiaki T 2008 Electrical Engineering in Japan 165 1079
[12]	Collaert N, Verheyen P, Meyer K D, Loo R, Caymax M 2002 European Solid-State Device Research Conference , Italy, 24—26 September, 2002 p263
[13]	Dai Y H, Chen J N, Ke D M, Sun J E 2005 Acta Phys. Sin. 54 897(in Chinese) [代月花、陈军宁、柯导明、孙家讹 2005 54 897]
[14]	Gao J X, Zhang Y M, Tang X Y, Zhang Y M 2006 Acta Phys. Sin. 55 2992(in Chinese) [郜锦侠、张义门、汤晓燕、张玉明 2006 55 2992]
[15]	Zainuddin A, Haque A 2005 IEEE Trans. Electron Devices 52 2812
[16]	Tezuka T, Sugiyama N, Mizuno T, Takagi S I 2003 IEEE Trans. Electron Devices 50 1328
[17]	Rim K, Narasilha S, Longstreet M, Mocuta A, Cai J 2002 International Electron Devices Meeting, San Francisco, December 8—11, 2002 p43
[18]	Flachowsky S, Wei A, Herrmann T, Illgen R, Horstmann M, Richter R, Salz H, Klix W, Stenzel R 2008 Materials Science and Engineering B 154 98

施引文献

[1]	Nayak D K, Woo J C S, Park J S, Wang K L, Macwilliams K P 1991 IEEE Electron Device Letters 12 154
[2]	Li J, Liu H X, Li B, Gao L, Yuan B 2010 Chin. Phys. B 19 107301
[3]	Qin S S, Zhang H M, Hu H Y, Dai X Y, Xuan R X, Shu B 2010 Chin. Phys. B 19 37201
[4]	Du G, Liu X Y, Xia Z L, Yang J F, Han R Q, 2010 Chin. Phys. B 19 57304
[5]	Zhang H M, Cui X Y, Hu H Y, Dai X Y, Xuan X R 2007 Acta Phys. Sin. 56 3504 (in Chinese) [张鹤鸣、崔晓英、胡辉勇、戴显英、宣荣喜 2007 56 3504]
[6]	Bindu B, DasGupta N, DasGupta A 2006 IEEE Trans. Electron Devices 53 1411
[7]	Lukic P M, Ramovic R M, Sasic R M 2006 25th International Conference on Microelectronics, Belgrade, May 14—17, 2006 p472
[8]	Fiorenza J G, Park J S, Lochtefeld A 2008 IEEE Trans. Electron Devices 55 640
[9]	Lee S H, Majhi P, Jungwoo O, Sassman B, Young C, Bowonder A, Loh W Y, Choi K J, Cho B J, Lee H D, Kirsch P, Harris H R, Tsai W, Satta S, Tseng H H, Banerjee S K, Jammy R 2008 IEEE Electron Device Letters 29 1017
[10]	Yang R, Luo J S, Tub J, Zhang R Z 2004 Microelectronics Journal 35 145
[11]	Shinobu T, Masao S, Junichi M, Toshiaki T 2008 Electrical Engineering in Japan 165 1079
[12]	Collaert N, Verheyen P, Meyer K D, Loo R, Caymax M 2002 European Solid-State Device Research Conference , Italy, 24—26 September, 2002 p263
[13]	Dai Y H, Chen J N, Ke D M, Sun J E 2005 Acta Phys. Sin. 54 897(in Chinese) [代月花、陈军宁、柯导明、孙家讹 2005 54 897]
[14]	Gao J X, Zhang Y M, Tang X Y, Zhang Y M 2006 Acta Phys. Sin. 55 2992(in Chinese) [郜锦侠、张义门、汤晓燕、张玉明 2006 55 2992]
[15]	Zainuddin A, Haque A 2005 IEEE Trans. Electron Devices 52 2812
[16]	Tezuka T, Sugiyama N, Mizuno T, Takagi S I 2003 IEEE Trans. Electron Devices 50 1328
[17]	Rim K, Narasilha S, Longstreet M, Mocuta A, Cai J 2002 International Electron Devices Meeting, San Francisco, December 8—11, 2002 p43
[18]	Flachowsky S, Wei A, Herrmann T, Illgen R, Horstmann M, Richter R, Salz H, Klix W, Stenzel R 2008 Materials Science and Engineering B 154 98

[1]	张冷, 沈宇皓, 汤朝阳, 吴孔平, 张鹏展, 刘飞, 侯纪伟. 单轴应变对Sb₂Se₃空穴迁移率的影响. , 2024, 73(11): 117101. doi: 10.7498/aps.73.20240175
[2]	纪婷伟, 白刚. 双轴错配应变对铁电双栅负电容晶体管性能的影响. , 2023, 72(6): 067701. doi: 10.7498/aps.72.20222190
[3]	刘乃漳, 姚若河, 耿魁伟. AlGaN/GaN高电子迁移率晶体管的栅极电容模型. , 2021, 70(21): 217301. doi: 10.7498/aps.70.20210700
[4]	刘乃漳, 张雪冰, 姚若河. AlGaN/GaN高电子迁移率器件外部边缘电容的物理模型. , 2020, 69(7): 077302. doi: 10.7498/aps.69.20191931
[5]	郭宁, 周舟, 倪牮, 蔡宏琨, 张建军, 孙艳艳, 李娟. 基于二维有机无机杂化钙钛矿的薄膜晶体管. , 2020, 69(19): 198102. doi: 10.7498/aps.69.20200701
[6]	周幸叶, 吕元杰, 谭鑫, 王元刚, 宋旭波, 何泽召, 张志荣, 刘庆彬, 韩婷婷, 房玉龙, 冯志红. 基于脉冲方法的超短栅长GaN基高电子迁移率晶体管陷阱效应机理. , 2018, 67(17): 178501. doi: 10.7498/aps.67.20180474
[7]	安霞, 黄如, 李志强, 云全新, 林猛, 郭岳, 刘朋强, 黎明, 张兴. 高迁移率Ge沟道器件研究进展. , 2015, 64(20): 208501. doi: 10.7498/aps.64.208501
[8]	白敏, 宣荣喜, 宋建军, 张鹤鸣, 胡辉勇, 舒斌. 压应变Ge/(001)Si1-xGex空穴散射与迁移率模型. , 2015, 64(3): 038501. doi: 10.7498/aps.64.038501
[9]	吕懿, 张鹤鸣, 胡辉勇, 杨晋勇, 殷树娟, 周春宇. 单轴应变硅N沟道金属氧化物半导体场效应晶体管电容特性模型. , 2015, 64(6): 067305. doi: 10.7498/aps.64.067305
[10]	王斌, 张鹤鸣, 胡辉勇, 张玉明, 宋建军, 周春宇, 李妤晨. 应变SiGe p 型金属氧化物半导体场效应管栅电容特性研究. , 2013, 62(12): 127102. doi: 10.7498/aps.62.127102
[11]	常虎东, 孙兵, 卢力, 赵威, 王盛凯, 王文新, 刘洪刚. 高迁移率In0.6Ga0.4As沟道MOSHEMT与MOSFET器件特性的研究. , 2012, 61(21): 217304. doi: 10.7498/aps.61.217304
[12]	王鑫华, 赵妙, 刘新宇, 蒲颜, 郑英奎, 魏珂. AlGaN/AlN/GaN高电子迁移率器件的电容电压特性的经验拟合. , 2011, 60(4): 047101. doi: 10.7498/aps.60.047101
[13]	王晓艳, 张鹤鸣, 宋建军, 马建立, 王冠宇, 安久华. 应变Si/(001)Si1-xGex电子迁移率. , 2011, 60(7): 077205. doi: 10.7498/aps.60.077205
[14]	李劲, 刘红侠, 李斌, 曹磊, 袁博. 高k栅介质应变Si SOI MOSFET的阈值电压解析模型. , 2010, 59(11): 8131-8136. doi: 10.7498/aps.59.8131
[15]	牛连斌, 关云霞. 富勒烯掺杂NPB空穴传输层的有机电致发光器件. , 2009, 58(7): 4931-4935. doi: 10.7498/aps.58.4931
[16]	尹丽琴, 彭俊彪. 聚合物P3HT在不同退火温度下的空穴传输特性. , 2009, 58(5): 3456-3460. doi: 10.7498/aps.58.3456
[17]	李潇, 张海英, 尹军舰, 刘亮, 徐静波, 黎明, 叶甜春, 龚敏. 磷化铟复合沟道高电子迁移率晶体管击穿特性研究. , 2007, 56(7): 4117-4121. doi: 10.7498/aps.56.4117
[18]	代月花, 陈军宁, 柯导明, 孙家讹, 胡媛. 纳米MOSFET迁移率解析模型. , 2006, 55(11): 6090-6094. doi: 10.7498/aps.55.6090
[19]	李泽宏, 李肇基, 张　波, 方　健. 非均匀沟道MOS辐照正空间电荷迁移率模型. , 2004, 53(2): 561-565. doi: 10.7498/aps.53.561
[20]	汤晓燕, 张义门, 张玉明, 郜锦侠. 界面态电荷对n沟6H-SiC MOSFET场效应迁移率的影响. , 2003, 52(4): 830-833. doi: 10.7498/aps.52.830

计量

文章访问数: 8578
PDF下载量: 672
被引次数: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

搜索

留言板