磷离子注入纳米金刚石薄膜的n型导电性能与微结构研究

胡晓君; 胡衡; 陈小虎; 许贝

doi:10.7498/aps.60.068101

摘要

系统研究了磷离子注入并在不同温度退火后的纳米金刚石薄膜的微结构和电学性能.研究表明,当退火温度达到800 ℃以上时,薄膜呈良好的n型电导.Raman光谱和电子顺磁共振谱的结果表明,薄膜中金刚石相含量越高和完整性越好,薄膜电阻率越低. 这说明纳米金刚石晶粒为薄膜提供了电导.1000 ℃退火后,薄膜晶界中的非晶石墨相有序度提高,碳悬键数量降低,薄膜电阻率升高.薄膜导电机理为磷离子注入的纳米金刚石晶粒提供了n型电导,非晶碳晶界为其电导提供了传输路径.

关键词:

Abstract

Phosphorus ions are implanted into nanocrystalline diamond (NCD) films followed by being annealed at different temperatures. The results show that the samples exhibit good n-type conductivity when annealing temperature is increased to 800 ℃ and above. Raman spectroscopy and electron paramagnetic resonance measurements display that the sample with a larger quantity of diamond phase with better lattice perfection has a lower resistivity. It is indicated that nano-sized diamond grains make contributions to the n-type conductivity in the films. After 1000 ℃ annealing, the amorphous carbon grain boundaries become more ordered, which leads the dangling carbon bonds to decrease and the resistivity of the film to increases. It is revealed that the amorphous carbon grain boundaries supply a conduction path to the n-type phosphorus ion implanted nanocrystalline diamond grains.

Keywords:

作者及机构信息

1.
浙江工业大学化学工程与材料学院,杭州 310014

基金项目: 国家自然科学基金(批准号:50972129, 50602039)、浙江省钱江人才计划(批准号:2010R10026)资助的课题.

Authors and contacts

1.
College of Chemical Engineering and Material Science, Zhejiang University of Technology, Hangzhou 310014, China

参考文献

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施引文献

[1]	Raina S, Kang W P, Davidson J L 2008 Diam. Relat. Mater. 17 790
[2]	Williams O A, Nesladek M, Daenen M, Michaelson S, Hoffman A, Osawa E, Haenen K, Jackman R B 2008 Diam. Relat. Mater. 17 1080
[3]	Butler J E, Surnant AV 2008 Chem. Vap. Depos. 14 145
[4]	Beloborodov I S, Zapol P, Gruen D M, Curtiss L A 2006 Phys. Rev. B 74 235434
[5]	Mares J J, Hubik P, Kristofik J, Kindl D, Fanta M, Nesladek M, Williams O, Gruen D M 2006 Appl. Phys. Lett. 88 092107
[6]	Williams O A 2006 Semicond. Sci. Technol. 21 R49
[7]	Vlasov I I, Goovaerts E, Ralchenko V G, Konov V I, Khomich A V, Kanzyuba M V 2007 Diam. Relat. Mater. 16 2074
[8]	Hu Q, Hirai M, Joshi R K, Kumar A 2009 J. Phys. D: Appl. Phys. 42 025301
[9]	Arenal R, Montagnac G, Bruno P, Gruen D M 2007 Phys. Rev. B 76 245316
[10]	Kato H, Yamasaki S, Okushi H 2005 Appl. Phys. Lett. 86 222111
[11]	Pernot J, Koizumi S 2008 Appl. Phys. Lett. 93 052105
[12]	Koizumi S, Teraji T, Kanda H 2000 Diam. Relat. Mater. 9 935
[13]	Achatz P, Williams O A, Bruno P, Gruen D M, Garrido J A, Stutzmann M 2006 Phys. Rev. B 74 155429
[14]	Karihara S A, Antonelli A, Bernhole J, Car R 1991 Phys. Rev. Lett. 66 2010
[15]	Nishimori T, Nakano K, Sakamoto H, Takakuwa Y 1997 Appl. Phys. Lett. 71 945
[16]	Deguchi M, Kitabatake M, Hirao T 1996 Thin Solid Films 281—282 267
[17]	Kalish R 2007 J. Phys. D: Appl. Phys. 40 6467
[18]	Klauser F, Steinmuller-Nethl D, Kaindl R, Bertel E, Memmel N 2010 Chem. Vap. Depos. 16 127
[19]	Ferrari A C, Robertson J 2001 Phys. Rev. B 63 121405
[20]	Ferrari A C, Robertson J 2000 Phys. Rev. B 61 14095
[21]	Prawer S, Nugent K W, Jamieson D N, Orwa J O, Bursill L A, Peng J L 2000 Chem. Phys. Lett. 332 93
[22]	Prawer S, Nemanich R J 2009 Phil. Trans. Roy. Soc. Lond. A 362 2537
[23]	Pan J P, Hu X J, Lu L P, Yin C 2010 Acta Phys. Sin. 59 7410 (in Chinese) [潘金平、胡晓君、陆利平、印迟 2010 59 7410]
[24]	Sails S R, Gardiner D J, Bowden M, Savage J, Rodway D 1996 Diam. Relat. Mater. 5 589
[25]	Tamor M A, Haire J A, Wu C H, Hass K C 1989 Appl. Phys. Lett. 54 123
[26]	Chhowalla M, Ferrari A C, Robertson J, Amaratunga A J 2000 Appl. Phys. Lett. 76 1419
[27]	Poole C P 1983 Electron Spin Resonance (New York: Wiley)
[28]	Zvanut M E, Carlos W E, Freitas J A, Jamison K D, Hellmer R P 1994 Appl. Phys. Lett. 65 2287
[29]	Dubois M, Guerin K, Petit E, Batisse N, Hamwi A, Komatsu N, Giraudet J, Pirotte P, Masin F 2009 J. Phys. Chem. C 113 10371
[30]	Isoya J, Kanda H, Sakaguchi I 1997 Radiat. Phys. Chem. 50 321
[31]	Brosious P R, Corbett J W, Bourgoin J C 1974 Phys. Stat. Sol (a) 21 677
[32]	Teicher M, Beserman R 1982 J. Appl. Phys. 53 1467
[33]	Barklie R C 2001 Diam. Relat. Mater. 10 174
[34]	Show Y, Matsuoka F, Izumi T, Deguchi M, Kitabatake M, 1997 Appl. Surf. Sci. 117—118 574
[35]	Dasgupta D, Demichelis F, Pirri C F 1991 Phys. Rev. B 43 2131
[36]	Hu X J, Dai Y B, He X C, Shen H S, Li R B 2002 Acta Phys. Sin. 51 1388 (in Chinese) [胡晓君、戴永兵、何贤昶、沈荷生、李荣斌 2002 51 1388]

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