Al掺杂ZnO薄膜的厚度对其结构及磁学性能的影响

岂云开; 顾建军; 刘力虎; 张海峰; 徐芹; 孙会元

doi:10.7498/aps.60.067502

摘要

采用直流磁控共溅的方法在玻璃基底上制备了不同厚度的Al掺杂ZnO薄膜,并在真空和空气中分别退火.利用X射线衍射仪(XRD)和物理性能测量仪(PPMS)对系列薄膜的结构和磁性进行了表征.XRD结果显示:随着膜厚的增加,晶粒尺寸逐渐增大,薄膜的内应力逐渐减小.在空气退火的薄膜样品中观察到了室温的铁磁性,薄膜的饱和磁化强度Ms 随着膜厚的增加而增大,而矫顽力Hc却随着膜厚的增加而减小.

关键词:

Al doped ZnO films of different thickness have been prepared on glass substrates by dc magnetron sputtering, these films were annealed in different atmosphere . The crystal structures were analyzed by x-ray diffraction (XRD), and the magnetic properties were measured by a Physical Properties Measurement System (PPMS) with the magnetic field paralleled to the films plane. The results indicate that with increase of the thickness, the crystallinity of the thin films gets better and the crystallites of the Al doped ZnO thin films increase gradually, whereas the internal stresses decreased. The results show the films annealed in air shows obvious room temperature ferromagnetism. With the increase of the film thickness the saturation magnetization is enhanced, and the coercivity is weakened.

Keywords:

作者及机构信息

(1)河北省新型薄膜材料重点实验室,石家庄 050016; (2)河北师范大学物理科学与信息工程学院,石家庄 050016;河北省新型薄膜材料重点实验室,石家庄 050016; (3)河北师范大学物理科学与信息工程学院,石家庄 050016;河北省新型薄膜材料重点实验室,石家庄 050016;河北民族师范学院物理系, 承德 067000

基金项目: 河北省自然科学基金 (批准号:A2009000254)、河北师范大学博士基金(批准号:L2006B10)、河北省新型薄膜材料重点实验室开放课题和河北民族师范学院2010年度项目(批准号:201004)资助的课题.

Authors and contacts

(1)College of Physics Science and Information Engineering, Hebei Normal University, Shijiazhuang 050016, China; Key Laboratory of Advanced Films of Hebei Province, Shijiazhuang 050016, China; (2)College of Physics Science and Information Engineering, Hebei Normal University, Shijiazhuang 050016, China; Key Laboratory of Advanced Films of Hebei Province, Shijiazhuang 050016, China; Department of Physics, Hebei Normal University for Nationalities,; (3)Key Laboratory of Advanced Films of Hebei Province, Shijiazhuang 050016, China

参考文献

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施引文献

[1]	Dietl T, Ohno H, Matsukura F, Cibert J, Ferrand D 2000 Science 287 1019
[2]	Hsu H S, Huang J C A, Huang Y H, Liao Y F, Lin M Z, Lee C H, Lee J F, Chen S F, Lai L Y, Liu C P 2006 Appl. Phys. Lett. 88 242507
[3]	Liu X C, Shi E W, Chen Z Z, Zhang H W, Xiao B, Song L X 2006 Appl. Phys. Lett. 88 252503
[4]	Kane M H, Shalini K, Summers C J, Varatharajan R, Nause J, Vestal C R, Zhang Z J, Ferguson I T 2005 J. Appl. Phys. 97 023906
[5]	Liu L Q, Xiang B, Zhang X Z, Zhang Y, Yu D P 2006 Appl.Phys.Lett. 88 063104
[6]	Liu X X, Lin F T, Sun L L, Cheng W J, Ma X M, Shi W Z 2006 Appl. Phys. Lett. 88 062508
[7]	Herng T S, Lau S P, Yu S F, Yu S F, Yang H Y, Wang L, Tanemura M, Chen J S 2007 Appl. Phys. Lett. 90 032509
[8]	Karmakar D, Mandal S K, Kadam R M, Paulose P L, Rajarajan A K, Nath T K, Das A K, Dasgupta I, Das G P 2007 Phys. Rev. B 75 144404
[9]	Wolf S A, Awschalom D D, Buhrman R A, Daughton J M, von Molnar S, Roukes M L, Chtchelkanova A Y, Treger D M 2001 Science 294 1488
[10]	Lu Z L, Zou W Q, Ming X, Zhang F M 2010 Chin. Phys. B 19 056101
[11]	Liu X C, Zhang H W, Zhang T, Chen B, Chen Z, Song L,Shi E 2008 Chin. Phys. B 17 1371
[12]	Hou D L, Ye X J, Meng H J, Zhou H J, Li X L, Zhen C M, Tang G D 2007 Appl. Phys. Lett. 90 142502
[13]	Ma Y W, Ding J, Yi J B, Zhang H T, Ng C M 2009 J. Appl. Phys. 105 07C503
[14]	Qi Y K, Gu J J, Liu L H, Zhang H F, Xu Q, Sun H Y 2011 Acta Phys. Sin. 60 057502 ( in Chinese) [岂云开、顾建军、刘力虎、张海峰、俆芹、孙会元 2011 〖15] Gu J J, Liu L H, Qi Y K, Xu Q, Zhang H F, Sun H Y 2011 J. Appl. Phys. 109 023902
[15]	Zhang Y B, Li S, Goh G K L, Tripathy S 2008 Appl. Phys. Lett. 93 102510
[16]	Lim W T, Lee C H 1999 Thin Solid Films 353 12

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