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Radio frequency magnetron sputtering method is used to grow nanostructured VOx thin film on silicon nitride layer. X-ray diffraction and atomic force microscope are used to characterize the crystal structure and surface morphology, respectively. The variations of square resistance and thermal hysteresis loop are studied when the film is exposed to air for a long period of time, and the effects of these variations on the performance of device are analyzed. X-ray photoelectron spectrometer and Fourier transform infrared spectroscopy are employed to investigate the differences in composition and molecular structure between the fresh and aged films. The results indicate that the increase of square resistance is due to the oxidation of vanadium ions with low oxidation states. The reason to cause the change of thermal hysteresis loop is that the molecular structure of nanostructured VOx thin film is affected by the adsorbed atoms and functional groups.
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Keywords:
- nanostructured VOx thin films /
- magnetron sputtering /
- electrical properties /
- aging
[1] Yuan N Y, Li J H, Lin C L 2002 Acta Phys. Sin. 51 852 (in Chinese) [袁宁一、李金华、林成鲁 2002 51 852]
[2] Wang L X, Li J P, He X L, Gao X G 2006 Acta Phys. Sin. 55 2846 (in Chinese) [王利霞、李建平、何秀丽、高晓光 2006 55 2846]
[3] Chen C H, Huang D X, Zhu P 2007 Acta Phys. Sin. 56 5221 (in Chinese) [陈长虹、黄德修、朱 鹏 2007 56 5221]
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[5] Gentle A, Maaroof A I, Smith G B 2007 Nanotechnology 18 025202-1
[6] Wang H C, Yi X J, Lai J J, Li Y 2005 Chin. Phys. Lett. 22 1746
[7] Wang H C, Yi X J, Li Y 2005 Opt. Commun. 256 305
[8] Fieldhouse N, Pursel S M, Carey R, Horn M W, Bharadwaja S S N 2009 J. Vac. Sci. Technol. A 27 951
[9] Wang X J, Liang C J, Guan K P, Li D H, Nie Y X, Zhu S Q, Huang F, Zhang W W, Cheng Z W 2008 Chin. Phys. B 17 3512
[10] Gurvitch M, Luryi S, Polyakov A, Shabalov A, Dudley M, Wang G, Ge S, Yakovlev V 2007 J. Appl. Phys. 102 033504
[11] Ruzmetov D, Senanayake S D, Ramanathan S 2007 Phys. Rev. B 75 195102
[12] Moshfegh A Z, Ignatiev A 1992 Surf. Sci. Lett. 275 L650
[13] Bondarenka V, Grebinskij S, Kaciulis S, Mattogno G, Mickevicius S, Tvardauskas H, Volkov V, Zakharova G 2001 J. Electron. Spectrosc. Relat. Phenom. 120 131
[14] Bullot J, Cordier P, Gallais O, Gauthier M 1984 J. Non-crystal. Sol. 68 123
[15] Pan M X, Cao X Z, Li Y X, Wang B Y, Xue D S, Ma C X, Zhou C L, Wei L 2004 Acta Phys. Sin. 53 1956 (in Chinese) [潘梦霄、曹兴忠、李养贤、王宝义、薛德胜、马创新、周春兰、魏 龙 2004 53 1956]
[16] Bahgat A, Al-Hajry A, El-Desoky M M 2006 Phys. Status Solidi A 203 1999
[17] Abello L, Husson E, Repelin Y, Lucazeau G 1983 Spectrochim. Acta A 39 641
[18] Klimov V A, Timofeeva I O, Khanin S D, Shadrin E B, Il’inskii A V, Silva-Andrade F 2003 Semiconductors 37 370
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[1] Yuan N Y, Li J H, Lin C L 2002 Acta Phys. Sin. 51 852 (in Chinese) [袁宁一、李金华、林成鲁 2002 51 852]
[2] Wang L X, Li J P, He X L, Gao X G 2006 Acta Phys. Sin. 55 2846 (in Chinese) [王利霞、李建平、何秀丽、高晓光 2006 55 2846]
[3] Chen C H, Huang D X, Zhu P 2007 Acta Phys. Sin. 56 5221 (in Chinese) [陈长虹、黄德修、朱 鹏 2007 56 5221]
[4] Verkelis J, Bliznikas Z, Breive K, Dikinis V, Sarmatis R 1998 Sens. Actuators A 68 338
[5] Gentle A, Maaroof A I, Smith G B 2007 Nanotechnology 18 025202-1
[6] Wang H C, Yi X J, Lai J J, Li Y 2005 Chin. Phys. Lett. 22 1746
[7] Wang H C, Yi X J, Li Y 2005 Opt. Commun. 256 305
[8] Fieldhouse N, Pursel S M, Carey R, Horn M W, Bharadwaja S S N 2009 J. Vac. Sci. Technol. A 27 951
[9] Wang X J, Liang C J, Guan K P, Li D H, Nie Y X, Zhu S Q, Huang F, Zhang W W, Cheng Z W 2008 Chin. Phys. B 17 3512
[10] Gurvitch M, Luryi S, Polyakov A, Shabalov A, Dudley M, Wang G, Ge S, Yakovlev V 2007 J. Appl. Phys. 102 033504
[11] Ruzmetov D, Senanayake S D, Ramanathan S 2007 Phys. Rev. B 75 195102
[12] Moshfegh A Z, Ignatiev A 1992 Surf. Sci. Lett. 275 L650
[13] Bondarenka V, Grebinskij S, Kaciulis S, Mattogno G, Mickevicius S, Tvardauskas H, Volkov V, Zakharova G 2001 J. Electron. Spectrosc. Relat. Phenom. 120 131
[14] Bullot J, Cordier P, Gallais O, Gauthier M 1984 J. Non-crystal. Sol. 68 123
[15] Pan M X, Cao X Z, Li Y X, Wang B Y, Xue D S, Ma C X, Zhou C L, Wei L 2004 Acta Phys. Sin. 53 1956 (in Chinese) [潘梦霄、曹兴忠、李养贤、王宝义、薛德胜、马创新、周春兰、魏 龙 2004 53 1956]
[16] Bahgat A, Al-Hajry A, El-Desoky M M 2006 Phys. Status Solidi A 203 1999
[17] Abello L, Husson E, Repelin Y, Lucazeau G 1983 Spectrochim. Acta A 39 641
[18] Klimov V A, Timofeeva I O, Khanin S D, Shadrin E B, Il’inskii A V, Silva-Andrade F 2003 Semiconductors 37 370
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