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In this paper, threshold voltage model of quantum-well channel pMOSFET with p+polycrystalline SiGe gate and its cut-in voltage model were established based on solving Poisson equation while considering the impact of free carrier. The effects of relevant parameters (Ge concentration of poly SiGe gate, Ge concentration of quantum-well SiGe channel, thickness of oxide layer, thickness of Si cap layer, doping content of quantum-well SiGe channel, and doping content of substrate) on threshold voltage and cut-in voltage of the parasitic channel was analysed by numerical analysis, and obtained the methods to restrain the opening of parasitic channel. The results of the models are in good agreement wih that of experiment reported as well as of ISE simulation.
[1] Currie M T 2004 IEEE international Conference on integrated Circuit Design and Technology 2004 p261
[2] Zhang Z F, Zhang H M, Hu H Y, Xuan R X 2009 Acta Phys. Sin. 58 4948 (in Chinese) [张志锋、张鹤鸣、胡辉勇、宣荣喜 2009 58 4948]
[3] Song J J , Zhang HM, Hu H Y, Dai X Y 2008 Acta Phys. Sin. 57 5918 (in Chinese) [宋建军、张鹤鸣、胡辉勇、戴显英 2008 57 5918]
[4] Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2007 Chin. Phys. 16 3827
[5] LeGoues F K, Rosenberg R, Nguyen T, Himpsel F 1989 J. Appl. Phys. 65 1721
[6] Nayak D K, Kamjoo K, Park J S, Woo J C S 1990 Appl. Phys. Lett. 57 369
[7] Liao W S, Liaw Y G, Mao-Chyuan 2008 IEEE Electron Devices Lett. 29 86
[8] Gilmer D C, Schaeffer, Taylor J K 2010 IEEE Trans. Electron Devices 57 898
[9] Zhang H M, Cui X Y, Hu H Y, Dai X Y, Xuan R X 2007 Acta Phys. Sin. 56 3504 (in Chinese) [张鹤鸣、崔晓英、胡辉勇、戴显英、宣荣喜 2007 56 3504]
[10] Nayak D K, Woo J C S, Park J S 1991 IEEE Electron Devices Lett. 12 154
[11] Ponomarev Y V, Salm C, Schmitz J, Woerlee P H 1997 IEDM p829
[12] Lee W C 1999 IEEE Electron Devices Lett. 20 232
[13] King T J, McVittie J P, Saraswat K C, Pfiester J R 1994 IEEE Trans. Electron Devices 41 228
[14] Nayfeh H M, Hoyt J L, Antoniadis D A 2004 IEEE Trans. Electron Devices 51 2069
[15] Hellberg P E, Zhang S L, Petersson C S 1997 IEEE Electron Devices Lett. 18 456
[16] Yeo Y C, Lu Q, King T J, Hu C M 2000 IEDM p753
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[1] Currie M T 2004 IEEE international Conference on integrated Circuit Design and Technology 2004 p261
[2] Zhang Z F, Zhang H M, Hu H Y, Xuan R X 2009 Acta Phys. Sin. 58 4948 (in Chinese) [张志锋、张鹤鸣、胡辉勇、宣荣喜 2009 58 4948]
[3] Song J J , Zhang HM, Hu H Y, Dai X Y 2008 Acta Phys. Sin. 57 5918 (in Chinese) [宋建军、张鹤鸣、胡辉勇、戴显英 2008 57 5918]
[4] Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2007 Chin. Phys. 16 3827
[5] LeGoues F K, Rosenberg R, Nguyen T, Himpsel F 1989 J. Appl. Phys. 65 1721
[6] Nayak D K, Kamjoo K, Park J S, Woo J C S 1990 Appl. Phys. Lett. 57 369
[7] Liao W S, Liaw Y G, Mao-Chyuan 2008 IEEE Electron Devices Lett. 29 86
[8] Gilmer D C, Schaeffer, Taylor J K 2010 IEEE Trans. Electron Devices 57 898
[9] Zhang H M, Cui X Y, Hu H Y, Dai X Y, Xuan R X 2007 Acta Phys. Sin. 56 3504 (in Chinese) [张鹤鸣、崔晓英、胡辉勇、戴显英、宣荣喜 2007 56 3504]
[10] Nayak D K, Woo J C S, Park J S 1991 IEEE Electron Devices Lett. 12 154
[11] Ponomarev Y V, Salm C, Schmitz J, Woerlee P H 1997 IEDM p829
[12] Lee W C 1999 IEEE Electron Devices Lett. 20 232
[13] King T J, McVittie J P, Saraswat K C, Pfiester J R 1994 IEEE Trans. Electron Devices 41 228
[14] Nayfeh H M, Hoyt J L, Antoniadis D A 2004 IEEE Trans. Electron Devices 51 2069
[15] Hellberg P E, Zhang S L, Petersson C S 1997 IEEE Electron Devices Lett. 18 456
[16] Yeo Y C, Lu Q, King T J, Hu C M 2000 IEDM p753
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