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The radiation-induced charge distribution in shallow-trench isolation (STI) structures is analyzed in this paper. We present a new approach for modeling total dose effect of ultra-deep submicron transistors. The results show that, when there is no radiation-induced charge in top100 nm of the trench-silicon interface, the simulation results of 0.18μm ultra-deep submicron transistors show that the I-V sub-threshold does not produce the hump, and yield good agreement with experiments. On the aspect of the improvement on total ionizing dose, the leakage current of MOSFET with delta doping can be effectively reduced than with the uniform doping profile under lower radiation dose. If the Halo doping is adopted in landscape orientation, the total dose of ultra-deep submicron transistors can be improved. This improvement is evident even at higher irradiation dose.
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Keywords:
- total dose /
- delta doping /
- Halo doping /
- radiation effect
[1] Steven C W, Ronald C L, Jon V O, John M H, Steven C M 2005 IEEE Trans. Nucl. Sci. 52 2602
[2] Paillet P, Gaillardin M, Ferlet-Cavois V 2005 IEEE Trans. Nucl. Sci. 52 2413
[3] Simoen E, Rafi J M, Mercha A, Cleays C 2004 Solid-state Electronics 48 1045
[4] Anelli G, Campbell M, Delmastro M, Faccio F, Florian S, Giraldo A, Heijne E, Jarron P, Kloukinas K, Marchioro A, Moreira P, Snoeys W 1999 IEEE Trans. Nucl. Sci. 46 1690
[5] He B P, Wang G Z, Zhou H, Gong J C, Luo Y H, Jiang J H 2003 Acta. Phys. Sin. 52 188(in Chinese) [何宝平、王桂珍、周 辉、龚建成、罗尹虹、姜景和 2003 52 188]
[6] He B P, Yao Z B, 2010 Acta phys. Sin. 59 1985(in Chinese) [何宝平、姚志斌2010 59 1985]
[7] Wang S H, Lu Q, Wang W H 2010 Acta. Phys. Sin. 59 1970(in Chinese)[王思浩、鲁庆、王文华等2010 59 1970]
[8] Lir M, Du L, Zhuang Y Q, Bao J L, 2007 Acta. Phys. Sin. 56 3400(in Chinese)[李瑞珉、杜 磊、状奕琪、包军林 2007 56 3400]
[9] Peng S Q, Du L, Zhuang Q Y, Bao J L, HE L, CHEN W H 2008 Acta. Phys. Sin. 57 5205 (in Chinese ) [彭绍泉、杜 磊、庄奕琪、包军林、何 亮、陈伟华 2008 57 5205]
[10] Ivan Sanchez Esqueda, Hugh J. Barnaby, Michael L. Alles 2005 IEEE Trans. Nucl. Sci. 52 2259
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[1] Steven C W, Ronald C L, Jon V O, John M H, Steven C M 2005 IEEE Trans. Nucl. Sci. 52 2602
[2] Paillet P, Gaillardin M, Ferlet-Cavois V 2005 IEEE Trans. Nucl. Sci. 52 2413
[3] Simoen E, Rafi J M, Mercha A, Cleays C 2004 Solid-state Electronics 48 1045
[4] Anelli G, Campbell M, Delmastro M, Faccio F, Florian S, Giraldo A, Heijne E, Jarron P, Kloukinas K, Marchioro A, Moreira P, Snoeys W 1999 IEEE Trans. Nucl. Sci. 46 1690
[5] He B P, Wang G Z, Zhou H, Gong J C, Luo Y H, Jiang J H 2003 Acta. Phys. Sin. 52 188(in Chinese) [何宝平、王桂珍、周 辉、龚建成、罗尹虹、姜景和 2003 52 188]
[6] He B P, Yao Z B, 2010 Acta phys. Sin. 59 1985(in Chinese) [何宝平、姚志斌2010 59 1985]
[7] Wang S H, Lu Q, Wang W H 2010 Acta. Phys. Sin. 59 1970(in Chinese)[王思浩、鲁庆、王文华等2010 59 1970]
[8] Lir M, Du L, Zhuang Y Q, Bao J L, 2007 Acta. Phys. Sin. 56 3400(in Chinese)[李瑞珉、杜 磊、状奕琪、包军林 2007 56 3400]
[9] Peng S Q, Du L, Zhuang Q Y, Bao J L, HE L, CHEN W H 2008 Acta. Phys. Sin. 57 5205 (in Chinese ) [彭绍泉、杜 磊、庄奕琪、包军林、何 亮、陈伟华 2008 57 5205]
[10] Ivan Sanchez Esqueda, Hugh J. Barnaby, Michael L. Alles 2005 IEEE Trans. Nucl. Sci. 52 2259
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