发光二极管用红色荧光粉SrMoO4:Eu3+的制备和发射性质

唐红霞; 吕树臣

doi:10.7498/aps.60.037805

摘要

采用化学共沉淀法制备了适合于紫外、近紫外、蓝光发光二极管(LED)激发的红色荧光粉SrMoO4:Eu3+.研究了样品的晶体结构和发光性质.结果表明:化学共沉淀法合成的SrMoO4:Eu3+荧光粉为四方纯相,其激发光谱包括一个宽带峰和一系列尖峰,峰值位于280 nm(宽带峰中心),395 nm,465 nm,可以被紫外LED和蓝光LED有效激发.在395 nm的激发下,测得发射光谱的强发射峰位于613 nm,对应Eu

关键词:

Abstract

The SrMoO4:Eu3+red phosphors that can be excited effectively by the ultraviolet, near ultraviolet and blue light emitting diode (LED) were prepared by chemical coprecipitation. The crystal structure and luminescent properties of the SrMoO4:Eu3+ phosphors were investigated. The X-ray diffraction patterns showed that the SrMoO4:Eu3+synthesized by the process was a pure phase with tetragonal structure. The excitation spectrum of the SrMoO4:Eu3+red phosphors consisted of a broad band peak and a series of sharp peaks, and since the strong peaks were located at 280 nm (the broad band center), 395 nm and 465 nm, respectively, the phosphor can be excited effectively by the UV LED and Blue LED. The emission spectrum excited by 395 nm showed a strong emission peak at 613 nm, originating from the 5D0→7F2transition of Eu3+ions. The Eu3+ion concentration has great influence on the crystal parameters, the crystal symmetries and the luminescent properties. The influence of different concentrations of doped Eu3+ions on the luminescent intensity of SrMoO4:Eu3+was studied and the optimal doping concentration was found to be 15%.

Keywords:

作者及机构信息

1.
哈尔滨师范大学物理与电子工程学院,哈尔滨 150080

基金项目: 黑龙江省自然科学基金(批准号:A200812),哈尔滨师范大学科技发展预研项目(批准号:08XYG-02)资助的课题.

Authors and contacts

1.
Department ofPhysics and Electronic Engineering Harbin Normal University, Harbin 150080,China

参考文献

[1]	Schlotter P, Schmidt R, Schneider J 1997 Appl. Phys. A 64 417
[2]	Fang Z L, Ye J C, Li X Y 2000 Founctional Material and Devices 6 406
[3]	Sivakumar V, Varadaraju U V 2005 J.Electrochem.Soc. 150 H168
[4]	Cai L Y, Chen X L, Chen X Y, Liu Q L, Lu F C, Wei X D 2009 Chin. Phys. B 18 3555
[5]	Liao Q R, Zhuang W D, Xia T, Liu R H, Hu Y S, Teng X M, Liu Y H 2009 Acta Phys. Sin. 58 2776 (in Chinese) [廖秋荣、庄卫东、夏天、刘荣辉、胡运生、滕晓明、刘元红 2009 58 2776]
[6]	Narendran N, Maliyagoda N, Bierman A, Phsar R M, Overington M 2000 Proc. SPIE 3938 240
[7]	Dalmasso S, Damilano B, Pernot C, Dussaigne A, Byrne D, Grandjean N, Leroux M, Massies J 2002 Phys. Status Solidi A 192 139
[8]	Li P L, Yang Z P, Wang Z J, Guo Q L 2008 Chin. Phys. B 17 1907
[9]	Wang Z J, Li P L, Yang Z P, Guo Q L, Li X 2010 Chin. Phys. B 19 017801
[10]	Yang Z P, Liu Y F, Wang L W, Yu Q M, Xiong Z J, Xu X L 2007 Acta. Phys. Sin. 56 546 (in Chinese) [杨志平、刘玉峰、王利伟、余泉茂、熊志军、徐小岭 2007 56 546]
[11]	Kim J S, Jeon P E,Choi J C, Park H L, Mho S I, Kim G C 2004 Appl. Phys. Lett. 84 293
[12]	Fu G S, Guo Q L, Li P L, Wang Z J, Yang Z P 2009 Chin. Phys. B 18 2068
[13]	Li J, Wang Y H, Dong Q Z, Liu J D 2010 Chin. Phys. B 19 063301
[14]	Wang Z J, Li P L, Wang G, Yang Z P, Guo Q L 2008 Acta Phys. Sin. 57 4575 ( in Chinese)[王志军、李盼来、王刚、杨志平、郭庆林 2008 57 4575]
[15]	Haque M M, Lee H I, Kim D K 2009 Journal of Alloys and Compounds 481 792
[16]	Hu Y S, Zhuang W D, Ye H Q, Wang D H, Zhang S S, Huang X W 2005 Journal of Alloys and Compounds 390 226
[17]	Neeraj S, Kijima N, Cheetham A K 2004 Chem. Phy. Lett. 387 2
[18]	Yu Y, Lü S C, Zhou B B 2006 Acta Phys. Sin. 55 4332 (in Chinese) [俞莹、吕树臣、周百斌 2006 55 4332]
[19]	Ma M X, Zhu D C, Tu M J 2009 Acta Phys. Sin. 58 5826 (in Chinese) [马明星、朱达川、涂铭旌 2009 58 5826]
[20]	Ci Z, Wang Y, Zhang J, Sun Y 2008 Physica B 403 670
[21]	Wang Z L, Liang H B, Gong M L 2007 Journal of Alloys and Compounds 432 308
[22]	Li X, Yang Z P, Guan L, Guo Q L, Huai S F, Li P L 2007 J. Rare Earths. 25 706

施引文献

[1]	Schlotter P, Schmidt R, Schneider J 1997 Appl. Phys. A 64 417
[2]	Fang Z L, Ye J C, Li X Y 2000 Founctional Material and Devices 6 406
[3]	Sivakumar V, Varadaraju U V 2005 J.Electrochem.Soc. 150 H168
[4]	Cai L Y, Chen X L, Chen X Y, Liu Q L, Lu F C, Wei X D 2009 Chin. Phys. B 18 3555
[5]	Liao Q R, Zhuang W D, Xia T, Liu R H, Hu Y S, Teng X M, Liu Y H 2009 Acta Phys. Sin. 58 2776 (in Chinese) [廖秋荣、庄卫东、夏天、刘荣辉、胡运生、滕晓明、刘元红 2009 58 2776]
[6]	Narendran N, Maliyagoda N, Bierman A, Phsar R M, Overington M 2000 Proc. SPIE 3938 240
[7]	Dalmasso S, Damilano B, Pernot C, Dussaigne A, Byrne D, Grandjean N, Leroux M, Massies J 2002 Phys. Status Solidi A 192 139
[8]	Li P L, Yang Z P, Wang Z J, Guo Q L 2008 Chin. Phys. B 17 1907
[9]	Wang Z J, Li P L, Yang Z P, Guo Q L, Li X 2010 Chin. Phys. B 19 017801
[10]	Yang Z P, Liu Y F, Wang L W, Yu Q M, Xiong Z J, Xu X L 2007 Acta. Phys. Sin. 56 546 (in Chinese) [杨志平、刘玉峰、王利伟、余泉茂、熊志军、徐小岭 2007 56 546]
[11]	Kim J S, Jeon P E,Choi J C, Park H L, Mho S I, Kim G C 2004 Appl. Phys. Lett. 84 293
[12]	Fu G S, Guo Q L, Li P L, Wang Z J, Yang Z P 2009 Chin. Phys. B 18 2068
[13]	Li J, Wang Y H, Dong Q Z, Liu J D 2010 Chin. Phys. B 19 063301
[14]	Wang Z J, Li P L, Wang G, Yang Z P, Guo Q L 2008 Acta Phys. Sin. 57 4575 ( in Chinese)[王志军、李盼来、王刚、杨志平、郭庆林 2008 57 4575]
[15]	Haque M M, Lee H I, Kim D K 2009 Journal of Alloys and Compounds 481 792
[16]	Hu Y S, Zhuang W D, Ye H Q, Wang D H, Zhang S S, Huang X W 2005 Journal of Alloys and Compounds 390 226
[17]	Neeraj S, Kijima N, Cheetham A K 2004 Chem. Phy. Lett. 387 2
[18]	Yu Y, Lü S C, Zhou B B 2006 Acta Phys. Sin. 55 4332 (in Chinese) [俞莹、吕树臣、周百斌 2006 55 4332]
[19]	Ma M X, Zhu D C, Tu M J 2009 Acta Phys. Sin. 58 5826 (in Chinese) [马明星、朱达川、涂铭旌 2009 58 5826]
[20]	Ci Z, Wang Y, Zhang J, Sun Y 2008 Physica B 403 670
[21]	Wang Z L, Liang H B, Gong M L 2007 Journal of Alloys and Compounds 432 308
[22]	Li X, Yang Z P, Guan L, Guo Q L, Huai S F, Li P L 2007 J. Rare Earths. 25 706

[1]	赵建铖, 吴朝兴, 郭太良. 无注入型发光二极管的载流子输运模型研究. , 2023, 72(4): 048503. doi: 10.7498/aps.72.20221831
[2]	蒋福春, 刘瑞友, 彭冬生, 刘文, 柴广跃, 李百奎, 武红磊. 基于光谱法的发光二极管稳态热阻测量方法. , 2021, 70(9): 098501. doi: 10.7498/aps.70.20201093
[3]	陈佳楣, 苏杭, 李婉, 张立来, 索鑫磊, 钦敬, 朱坤, 李国龙. 钙钛矿发光二极管光提取性能增强的研究进展. , 2020, 69(21): 218501. doi: 10.7498/aps.69.20200755
[4]	王党会, 许天旱. 蓝紫光发光二极管中的低频产生-复合噪声行为研究. , 2019, 68(12): 128104. doi: 10.7498/aps.68.20190189
[5]	瞿子涵, 储泽马, 张兴旺, 游经碧. 高效绿光钙钛矿发光二极管研究进展. , 2019, 68(15): 158504. doi: 10.7498/aps.68.20190647
[6]	王党会, 许天旱, 王荣, 雒设计, 姚婷珍. InGaN/GaN多量子阱结构发光二极管发光机理转变的低频电流噪声表征. , 2015, 64(5): 050701. doi: 10.7498/aps.64.050701
[7]	张超宇, 熊传兵, 汤英文, 黄斌斌, 黄基锋, 王光绪, 刘军林, 江风益. 图形硅衬底GaN基发光二极管薄膜去除衬底及AlN缓冲层后单个图形内微区发光及应力变化的研究. , 2015, 64(18): 187801. doi: 10.7498/aps.64.187801
[8]	陈伟超, 唐慧丽, 罗平, 麻尉蔚, 徐晓东, 钱小波, 姜大朋, 吴锋, 王静雅, 徐军. GaN基发光二极管衬底材料的研究进展. , 2014, 63(6): 068103. doi: 10.7498/aps.63.068103
[9]	毛金伟, 吕树臣, 曲秀荣, 何冬丽, 孟庆裕. 发光二极管用红色荧光粉Sr0.8-xBaxEu0.2WO4的制备和性质研究. , 2013, 62(3): 037803. doi: 10.7498/aps.62.037803
[10]	高晖, 孔凡敏, 李康, 陈新莲, 丁庆安, 孙静. 双层光子晶体氮化镓蓝光发光二极管结构优化的研究. , 2012, 61(12): 127807. doi: 10.7498/aps.61.127807
[11]	贾然, 顾访, 吴珍华, 赵学童, 李建英. 简化共沉淀法制备CaCu3Ti4O12陶瓷及其介电性能研究. , 2012, 61(20): 207701. doi: 10.7498/aps.61.207701
[12]	桑士晶, 吕树臣, 曲秀荣, 杨晓旭, 张丽丽. 纳米晶ZrO2:Eu3+-Bi3+的制备及Bi3+敏化Eu3+特征发射的研究. , 2012, 61(22): 227801. doi: 10.7498/aps.61.227801
[13]	薛正群, 黄生荣, 张保平, 陈朝. 激光诱导p-GaN掺杂对发光二极管性能改善的分析. , 2010, 59(2): 1268-1274. doi: 10.7498/aps.59.1268
[14]	朱丽虹, 蔡加法, 李晓莹, 邓彪, 刘宝林. In组分渐变提高InGaN/GaN多量子阱发光二极管发光性能. , 2010, 59(7): 4996-5001. doi: 10.7498/aps.59.4996
[15]	李为军, 张波, 徐文兰, 陆卫. InGaN/GaN多量子阱蓝色发光二极管的实验与模拟分析. , 2009, 58(5): 3421-3426. doi: 10.7498/aps.58.3421
[16]	李炳乾, 郑同场, 夏正浩. GaN基蓝光发光二极管正向电压温度特性研究. , 2009, 58(10): 7189-7193. doi: 10.7498/aps.58.7189
[17]	沈光地, 张剑铭, 邹德恕, 徐晨, 顾晓玲. 大功率GaN基发光二极管的电流扩展效应及电极结构优化研究. , 2008, 57(1): 472-476. doi: 10.7498/aps.57.472
[18]	张剑铭, 邹德恕, 徐晨, 顾晓玲, 沈光地. 电极结构优化对大功率GaN基发光二极管性能的影响. , 2007, 56(10): 6003-6007. doi: 10.7498/aps.56.6003
[19]	刘乃鑫, 王怀兵, 刘建平, 牛南辉, 韩军, 沈光地. p型氮化镓的低温生长及发光二极管器件的研究. , 2006, 55(3): 1424-1429. doi: 10.7498/aps.55.1424
[20]	胡瑾, 杜磊, 庄奕琪, 包军林, 周江. 发光二极管可靠性的噪声表征. , 2006, 55(3): 1384-1389. doi: 10.7498/aps.55.1384

计量

文章访问数: 5613
PDF下载量: 358
被引次数: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

搜索

留言板