热光伏器件中的光谱调控

熊家骋; 黄哲群; 张恒; 王启祥; 崔可航

doi:10.7498/aps.73.20240629

摘要

热光伏器件是一种利用光伏效应将热源的热辐射转化为电能的器件. 高效热光伏器件在电网规模的热能存储、全光谱太阳能转换、分布式联合发电、废热回收等方面有着广阔的应用前景. 然而, 大多数热辐射处于低能量波长范围, 无法有效激发光伏电池半导体的电子跃迁从而产生电能. 因此, 对热辐射光谱发射的选择性调控是实现高效热光伏器件的关键. 近年来, 伴随着纳米光子学、材料科学与人工智能赋能科学的发展, 热光伏器件中的光谱调控也取得了极大进展. 本文首先回顾了热光伏器件的发展历史, 继而围绕热光伏器件中热端和冷端的光谱调控, 详细讨论了超结构选择性发射器、本征选择性发射器、光滤波器以及背表面反射器的热辐射光谱调控物理机制与调控手段, 并梳理和总结了近场热光伏的相关研究, 最后对热光伏器件的未来发展进行了展望.

关键词:

Abstract

Thermophotovoltaic (TPV) device converts thermal radiation into electricity output through photovoltaic effect. High-efficiency TPV devices have extensive applications in grid-scale thermal storage, full-spectrum solar utilization, distributed thermal-electricity cogeneration, and waste heat recovery. The key to high-efficiency TPV devices lies in spectral regulation to achieve band-matching between thermal radiation of the emitters and electron transition of the photovoltaic cells. The latest advances in nanophotonics, materials science, and artificial intelligence have made milestone progress in spectral regulation and recording power conversion efficiency of up to 40% of TPV devices. Here we systematically review spectral regulation in TPV devices at the emitter end as well as the photovoltaic cell end. At the emitter end, spectral regulation is realized through thermal metamaterials and rare-earth intrinsic emitters to selectively enhance the in-band radiation and suppress the sub-bandgap radiation. At the photovoltaic cell end, spectral regulation mainly focuses on recycling the sub-bandgap thermal radiation through optical filters and back surface reflectors located at the front and back of the photovoltaic cells, respectively. We emphasize the light-matter interaction mechanisms and material systems of different spectral regulation strategies. We also discuss the spectral regulation strategies in near-field TPV devices. Finally, we look forward to potential development paths and prospects of spectral regulation to achieve scalable deployment of future TPV devices.

Keywords:

作者及机构信息

1.
上海交通大学材料科学与工程学院, 金属基复合材料国家重点实验室, 上海　200240

2.
上海交通大学致远创新研究中心, 上海　200240

通信作者: 黄哲群, huangzhequn@sjtu.edu.cn ; 崔可航, cuikehang@sjtu.edu.cn

基金项目: 国家自然科学基金(批准号: 52371139)、上海市扬帆计划 (批准号: 21YF1419700)和上海市浦江人才计划(批准号: 19PJ1404600)资助的课题.

Authors and contacts

1.
State Key Laboratory of Metal-Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China

2.
Zhiyuan Innovative Research Center, Shanghai Jiao Tong University, Shanghai 200240, China

Corresponding author: Huang Zhe-Qun, huangzhequn@sjtu.edu.cn ; Cui Ke-Hang, cuikehang@sjtu.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 52371139), the Shanghai Sailing Program, China (Grant No. 21YF1419700), and the Shanghai Pujiang Program, China (Grant No. 19PJ1404600).

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施引文献

图 1 TPV器件中的能量传输示意图

Fig. 1. Energy transport and schematic diagram of TPV devices.

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图 2 TPV发展历史中的重要节点^{[4–8,10,11,14–19]}

Fig. 2. Key milestones in the history of TPV development^{[4–8,10,11,14–19]}.

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图 3 TPV器件中光谱调控的主要方法

Fig. 3. Main methods of spectral regulation in TPV devices.

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图 4 一维超结构选择性热发射器的光谱调控　(a), (b) 100 nm厚的ENZ与ENP薄膜在完美反射器上的吸收率^[34]; (c) W/HfO₂一维结构的吸收特性及示意图^[35]; (d) W-SiO₂/Si一维超结构选择性热发射器的结构示意图及其光谱发射率^[39]; (e) W-SiO₂/Si一维超结构选择性热发射器中两个DBR的透光率^[39]; (f) W-SiO₂/Si一维超结构选择性热发射器在TM和TE极化下的能带分布图^[39]

Fig. 4. Spectral regulation in one-dimensional metamaterial thermal emitter: (a), (b) Absorptivity of 100 nm-thick ENZ and ENP films on a perfect reflector^[34]; (c) the spectral absorption and the structure of the one-dimensional W/HfO₂ thermal emitter^[35]; (d) the spectral emissivity and the structure of the one-dimensional W-SiO₂/Si thermal emitter^[39]; (e) the spectral transmittance of two DBRs in the one-dimensional W-SiO₂/Si thermal emitter^[39]; (f) the photonic band diagram of the W-SiO₂/Si thermal emitter under TM and TE polarization^[39].

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图 5 选择性热发射器在高温下的热稳定性　(a)—(c) Ta空腔光子晶体在1200 K高温工况下的结构变化仿真 (a) 2D截面图^[43]; (b) 3D投影图^[43]; (c) 200 h退火后的3D投影图^[43]; (d), (e) W/HfO₂热发射器制造完成时和1400 ℃真空退火6 h后的SEM横截面图^[45]; (f), (g) W-CNT二维光子晶体热发射器在1273 K下退火12 h和168 h后的SEM图像^[49]

Fig. 5. Thermal stability of selective thermal emitters at high temperatures: (a)–(c) Simulation results of structural change of the Ta PhC at 1200 K, (a) 2D cross-section image, (b) 3D projection image after 0 hours, and (c) after 200 h annealing^[43]; (d), (e) cross-sectional SEM images of the W/HfO₂ selective thermal emitter (d) before and (e) after annealing at 1400 ℃ for 6 h under vacuum pressure ^[45]; (f), (g) SEM images of the W-CNT PhC selective thermal emitter after 12 h and 168 h annealing at 1273 K^[49].

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图 6 双层薄膜结构发射器^[51] 基于双层结构热发射器的 (a) InGaAsSb, (b) InGaAs, (c) Ge, (d) Si TPV性能; (e) 双层结构的热膨胀系数匹配度的评估标准

Fig. 6. Bi-layer thin film structure emitter^[51]: (a) InGaAsSb, (b) InGaAs, (c) Ge, (d) Si TPV performance based on series of bi-layer thermal emitters; (e) design criteria of thermal expansion mismatch for bi-layer thermal emitters.

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图 7 本征选择性发射器的光学性能　(a) Yb₂O₃选择性热发射器与1735 K黑体的辐射强度对比^[53]; (b) Er₂O₃选择性热发射器与1735 K黑体的辐射强度对比^[53]

Fig. 7. Optical properties of the intrinsic selective emitters: (a) Comparison of radiation intensity between Yb₂O₃ selective thermal emitter and 1735 K blackbody^[53]; (b) comparison of radiation intensity between Er₂O₃ selective thermal emitter and 1735 K blackbody^[53].

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图 8 光滤波器的设计、优化与应用　(a) 使用梳齿型啁啾滤波器的TPV器件结构^[64]; (b)—(e)基于ResNet生成神经网络的一维多层结构多目标全局优化^[66], (b) ResNet全局优化示意图; (c) 优化所得到的45层滤波器的光谱反射率; (d) 优化所得到的45层滤波器的光谱反射率随入射角变化的函数; (e) 黑体白炽光源和优化所得到的45层滤波器后等效光源的发射功率

Fig. 8. Design, optimization and application of optical filter: (a) Structure of TPV devices using chirped mirror optical filter^[64]; (b)–(e) multiobjective global optimization of photonic structures based on ResNet generative neural networks^[66]; (b) schematic of the ResNet Global optimization; (c) reflection spectra of a 45-layer ResNet-optimized optical filter; (d) reflection spectra of the 45-layer ResNet-optimized optical filter as a function of the incident angle; (e) emissive power of a blackbody incandescent source and an equivalent source sandwiched by the filter featured in (c).

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图 9 空气桥TPV中的光子利用^[18]　带Au BSR的传统薄膜TPV (a)与带气桥反射器的薄膜TPV (b)的能量流示意图; (c) 在1500 K黑体热源下使用Au BSR的传统InGaAs薄膜电池的功率分布; (d) 在1500 K黑体热源下使用(b)所示空气桥TPV的功率分布

Fig. 9. Photon utilization in air-bridge thermophotovoltaics^[18]: Schematics of energy flow in a conventional thin-film TPV with Au BSR (a) versus a thin-film TPV with air-bridge reflector (b); (c) power distribution of a conventional thin-film InGaAs cell with a Au BSR operated with a 1500 K blackbody source; (d) power distribution of the air-bridge TPV shown in (b) operated using a 1500 K blackbody emitter.

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表 1 TPV热发射器的结构及其光谱性能汇总

Table 1. Summary of the structures and performance of TPV thermal emitters.

参考文献	材料与结构	测试波长范围/μm	设计温度/K	测试温度	光伏电池带隙/eV	光谱效率/ %
[2]	1D Si/SiO₂	1.00—8.00	1293	工作温度	0.55	34.5
[39]	1D Si/SiO₂/W	0.40—8.00	1473	室温	0.73	65.6
[37]	1D W+SiO₂/TiO₂+合金	0.80—6.00	1373	工作温度	0.55	46.8
[35]	1D W/HfO₂	0.65—10.0	1273	室温	0.55	49.5
[45]	1D W/HfO₂	0.50—4.00	1673	室温	0.72	50.2
[48]	1D W/HfO₂	0.50—3.50	1673	室温	0.72	48.3
[57]	1D YSZ/W/YSZ	0.30—4.00	1640	室温	0.67	50.1
[38]	W+Al₂O₃+SiO₂/TiO₂+W–Al₂O₃	0.50—5.00	1696	模拟	0.73	57.3
[3]	1D多晶Ta	1.00—3.00	1327	室温	0.62	60.0
[22]	2D Ta + HfO₂涂覆	0.25—2.50	1000	室温	0.54	71.2
[49]	2D W + CNT	0.50—5.00	1273	室温	0.74	42.1
[27]	3D W反蛋白石结构	0.50—5.00	1673	室温	0.67	33.9
[54]	Yb₂O₃	0.80—45.0	1735	工作温度	0.69	18.9
[55]	Al₂O₃/EAG	1.00—9.00	1850	工作温度	0.72	36.0
[58]	NiO掺杂MgO	1.00—5.00	1473	工作温度	0.69	45.9

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map

[1]	Datas A, Lopez-Ceballos A, Lopez E, Ramos A, del Canizo C 2022 Joule 6 418 Google Scholar
[2]	Chan W R, Bermel P, Pilawa-Podgurski R C N, Marton C H, Jensen K F, Senkevich J J, Joannopoulos J D, Soljacic M, Celanovic I 2013 Proc. Natl. Acad. Sci. U.S.A. 110 5309 Google Scholar
[3]	Chan W R, Stelmakh V, Ghebrebrhan M, Soljacic M, Joannopoulos J D, Celanovic I 2017 Energy Environ. Sci. 10 1367 Google Scholar
[4]	Coutts T J 1999 Renew. Sust. Energ. Rev. 3 77 Google Scholar
[5]	Nelson R E 2003 Semicond. Sci. Technol. 18 141 Google Scholar
[6]	Wedlock B D 1963 Proc. IEEE 51 694 Google Scholar
[7]	Guazzoni G, Kittl E, Shapiro S 1969 IEEE Trans. Electron Dev. 16 256
[8]	Swanson R M 1978 1978 International Electron Devices Meeting Washington, DC, USA, December 4–6, 1978 p70
[9]	Swanson R M 1980 International Electron Devices Meeting Washington, DC, USA, December 8–10, 1980 p186
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