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柔性Ⅲ-Ⅴ薄膜太阳电池通常被作为空间电源在航天器上使用, 而在实际应用中适宜的封装材料可以保护电池免受水分、氧化、污染物等环境因素的影响. 因此, 探究合适的柔性封装方案和电池性能的长期稳定性至关重要. 本文利用电阻焊方法将制备好的柔性双结GaInP/GaAs太阳电池进行焊接, 之后采用具有高透光性的薄膜材料和热熔胶与柔性电池进行层压封装并研究了其在恶劣储存条件下的性能稳定性和环境耐受性. 研究结果表明, 柔性封装太阳电池在1000 h以上的温度为85 ℃, 相对湿度85% (85 ℃/85% RH)的湿热试验以及108次温度范围为–60 ℃—75 ℃的冷热循环老化试验后仍然保持了很好的稳定性, 表明封装工艺对柔性太阳电池具有较好的保护作用. 此外, 基于二极管模型的电学仿真结果表明, 柔性封装后电池性能的改变是由于载流子复合增强, 从而降低了开路电压.
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关键词:
- GaAs薄膜太阳电池 /
- 多结太阳电池 /
- 柔性封装 /
- 可靠性
Flexible III-V thin-film solar cells are usually used as space power supply in spacecrafts. In practical applications, suitable encapsulated materials can protect the cells from being affected by environmental factors such as moisture, oxidation and pollutants. Therefore, it is critical to explore suitable flexible encapsulation schemes and long-term stability of solar cell performance. In this paper, the prepared flexible GaInP/GaAs solar cells are welded by resistance welding, and then laminated with polymer encapsulation thin films and hot melt adhesives with high light transmission. After being encapsulated, the flexible two-junction solar cell achieves good electrical performance (Jsc = 13.105 mA·cm–2, Voc = 2.360 V), the photoelectric conversion efficiency can reach 24.81%, and the weight density is about 405 g/m2. The performance stability and environmental tolerance of the encapsulated flexible GaInP/GaAs solar cells under complex storage conditions are investigated. The results show that the encapsulated flexible solar cells still maintain good stability after 85 ℃/85% RH damp heat has been tested for more than 1000 h and 108 cycles of thermal cycling test between –60 ℃ and 75 ℃, respectively. It also proves that the encapsulated technology adopted in this experiment is feasible and has an excellent protective effect on the double-junction solar cells. However, there is a slight decrease in the open-circuit voltage in the long-term damp heat test (ΔVoc ≈ 0.023 V), which may reflect the change of the solar cell itself. By further extracting the changes of the ideal factors n1 and n2 representing the recombination mechanism and diffusion mechanism respectively from the dark I-V curves (Δn1 = 1.295, Δn2 = 0.087), it can be found that the slight drop of open-circuit voltage is closely related to the recombination enhancement (Δn1$\gg $ Δn2). In the long-term high temperature and humidity environment, it is easy to introduce defects in the material of the solar cells, serving as the carrier recombination centers, thus accelerating the carrier recombination, reducing the parallel resistance, shortening the minority carrier lifetime, and increasing the reverse saturation current resulting in a slight drop in the open-circuit voltage. In addition, the electrical simulation results based on the diode-model indicate that the change in the performance of the solar cells after flexible encapsulation is due to the enhanced carrier recombination under damp heat test, which reduces the open-circuit voltage.-
Keywords:
- GaAs thin-film solar cells /
- multi-junction solar cells /
- flexible encapsulation /
- reliability
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图 1 柔性GaInP/GaAs薄膜太阳电池 (a) 堆叠结构示意图; (b) 工艺流程图
Fig. 1. Flexible GaInP/GaAs thin-film solar cells: (a) Stack structure diagram; (b) process flow diagram.
图 2 柔性GaInP/GaAs薄膜太阳电池 (a) 封装实物图; (b) 封装结构示意图
Fig. 2. Flexible GaInP/GaAs thin-film solar cells: (a) Picture of real encapsulated products; (b) encapsulation structure diagram.
图 3 (a) 未封装柔性电池EQE特性曲线; (b) 封装前后柔性GaInP/GaAs薄膜太阳电池在AM 1.5G光谱下的J-V特性曲线
Fig. 3. (a) EQE curves of unencapsulated flexible solar cell; (b) J-V characteristic curves of flexible GaInP/GaAs thin-film solar cells under AM 1.5G spectra before and after encapsulation.
图 4 柔性未封装GaInP/GaAs太阳电池85 ℃/85% RH湿热试验后在AM 1.5G光谱下的J-V特性曲线, 插图为相应的电学性能测试结果
Fig. 4. J-V characteristic curves under the AM 1.5G spectrum of unencapsulated flexible GaInP/GaAs solar cell after damp heat test at 85 ℃ and 85% RH, the inserted tables are the absolute values of performance parameters.
图 5 柔性封装GaInP/GaAs薄膜太阳电池 (a) 85 ℃/85% RH湿热试验; (b) –60 ℃—75 ℃冷热循环试验后在AM 1.5G光谱下的J-V特性曲线, 图中插入的表格为相应的电学性能测试结果; (c), (d) 在长期湿热和冷热循环试验下的短路电流密度(Jsc)、开路电压(Voc)、填充因子(FF)和效率(Eff)电学性能参数随老化时间的归一化变化
Fig. 5. J-V characteristic curves under the AM 1.5G spectra of encapsulated flexible GaInP/GaAs solar cells after: (a) Damp heat test at 85 ℃ and 85% RH; (b) thermal cycling test between –60 ℃ to 75 ℃, the inserted tables are the absolute values of performance parameters; (c), (d) normalized electrical properties of Jsc, Voc, FF, and Eff under long-term damp heat test (c) and thermal cycling test (d).
图 6 柔性封装GaInP/GaAs薄膜太阳电池湿热实验后的暗I-V曲线, 表格中为计算得到的理想因子n1和n2
Fig. 6. Dark I-V curves of encapsulated flexible GaInP/GaAs solar cells after damp heat test, the inserted tables are the calculated ideality factors n1 and n2.
图 8 I-V曲线模拟结果, 表格中为仿真各结子电池采用的反向饱和电流I01数值及仿真得到的Voc数值
Fig. 8. Simulation results of the I-V curves, the inserted table are the reverse saturation current I01 adopted in the simulation of each subcell and the Voc obtained by simulation.
表 1 仿真参数初始设置值
Table 1. Initial setting values of the simulation parameters.
Parameter Iph/
mAI01/
(10–17 A)I02/
(10–25 A)n1 n2 Rsh/
(105 Ω)GaInP 13.96 2.09 4.3 2 1 1 GaAs 13.00 345 1.2×105 2 1 1 
下载: 导出CSV
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[1] Green M A, Dunlop E D, Hohl-Ebinger J, Yoshita M, Kopidakis N, Bothe K, Hinken D, Rauer M, Hao X 2022 Prog. Photovoltaics Res. Appl. 30 687
Google Scholar
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[3] Imaizumi M, Nakamura T, Takamoto T, Ohshima T, Tajima M 2017 Prog. Photovoltaics Res. Appl. 25 161
Google Scholar
[4] Imaizumi M, Takamoto T, Sugimoto H, Ohshima T, Kawakita S 2019 Proceedings of the IEEE 46th Photovoltaic Specialists Conference Chicago, IL, USA, June 16–21, 2019 p1495
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Google Scholar
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Google Scholar
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[8] Takamoto T, Washio H, Juso H 2014 Proceedings of the 40th IEEE Photovoltaic Specialists Conference Denver, CO, USA, June 8–13, 2014 p1
[9] Samberg J P, Zachary Carlin C, Bradshaw G K, Colter P C, Harmon J L, Allen J B, Hauser J R, Bedair S M 2013 Appl. Phys. Lett. 103 103503
Google Scholar
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Google Scholar
[11] Geisz J F, Kurtz S, Wanlass M W, Ward J S, Duda A, Friedman D J, Olson J M, McMahon W E, Moriarty T E, Kiehl J T 2007 Appl. Phys. Lett. 91 023502
Google Scholar
[12] Schön J, Bissels G M M W, Mulder P, van Leest R H, Gruginskie N, Vlieg E, Chojniak D, Lackner D 2022 Prog. Photovoltaics Res. Appl. 30 1003
Google Scholar
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Google Scholar
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