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本文对非钳位感性开关(unclamped inductive switching, UIS)下4H-SiC双沟槽功率MOSFET失效机理进行实验和理论研究. 结果表明, 不同于平面功率MOSFET器件失效机理, 在单脉冲UIS测试下双沟槽功率MOSFET器件的栅极沟槽底角处的氧化层会发生损坏, 导致了器件失效. 测量失效器件的栅泄漏电流和电阻, 发现栅泄漏电流急剧增大, 电阻仅为25 Ω; 失效器件的阈值电压稳定不变. 使用TCAD软件对雪崩状态下的器件电场分布进行仿真计算发现, 最大电场位于栅极沟槽底拐角处, 器件内部最大结温未超过电极金属熔点, 同时也达到了理论与仿真的吻合.
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关键词:
- 4H-SiC双沟槽MOSFET /
- 单脉冲雪崩击穿能量 /
- 失效机理 /
- 栅极沟槽拐角氧化层断裂
In this paper, failure mechanism of DT 4H-SiC power MOSFET under unclamped inductive switch (UIS) test is evaluated by combination of experiment and theoretical research. The results show that unlike planar 4H-SiC power MOSFET, the gate oxide at the corner of of gate trench is destroyed under the UIS test, therefore, the device under test failed. And then, measurement results of the gate leakage and resistance between gate and source (Rgs) of the failed device indicate that gate leakage increases sharply and Rgs is only 25 Ω, however, the threshold voltage of failure device is unchanged. The analysis of the inner electrical field under avalanche state by using the TCAD software shows that the maximum electrical field exists at the corner of gate trench and the maximum junction temperature does not exceed the melt point of metal. These results are consistent with the experimental results .-
Keywords:
- 4H-SiC DT power mosfet /
- avalanche energy /
- failure mechanism /
- oxide crack at corner of gate trench
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[7] Ren N, Hu H, Wang K L, Zuo Z, Li R, Sheng K 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Chicago, USA, May 13–17, 2018 p431
[8] Yao K, Yano H, Iwamuro N 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) June 2–5, 2021 p115
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Google Scholar
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Google Scholar
[11] Hatakeyama T, Fukuda K, Okumura H, 2013 IEEE T. on Electron Dev. 60 613
Google Scholar
[12] https://fscdn.rohm.com/en/products/databook/datasheet/discrete/sic/mosfet/sct3080kr-e.pdf
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图 1 4H-SiC 功率MOS UIS应力产生电路图 (a) UIS测试电路原理图; (b) UIS实验装置图
Fig. 1. UIS test circuit of 4H-SiC power MOSFET: (a) Schematic circuit of UIS test; (b) setup of UIS test bench.
图 2 单脉冲 UIS 测试失效前最后一次实验波形 (划线)(
$ {L}_{\mathrm{l}\mathrm{o}\mathrm{a}\mathrm{d}} $ = 3.3 mH,$ {t}_{\mathrm{a}\mathrm{v}} $ = 20 μs,$ {E}_{\mathrm{a}\mathrm{v}} $ = 0.33 J)与单脉冲 UIS 测试失效实验波形(实线)($ {L}_{\mathrm{l}\mathrm{o}\mathrm{a}\mathrm{d}} $ = 3.3 mH,$ {t}_{\mathrm{a}\mathrm{v}} $ = 15 μs,$ {E}_{\mathrm{a}\mathrm{v}} $ = 0.37 J)Fig. 2. Experimental waveforms before failure under single UIS test(solid waveform) (
$ {L}_{\mathrm{l}\mathrm{o}\mathrm{a}\mathrm{d}} $ = 3.3 mH,$ {t}_{\mathrm{a}\mathrm{v}} $ = 20 μs,$ {E}_{\mathrm{a}\mathrm{v}} $ = 0.33 J); experimental waveforms during failure under single UIS test (lineation waveform)($ {L}_{\mathrm{l}\mathrm{o}\mathrm{a}\mathrm{d}} $ = 3.3 mH,$ {t}_{\mathrm{a}\mathrm{v}} $ = 15 μs,$ {E}_{\mathrm{a}\mathrm{v}} $ = 0.37 J).
图 3 UIS 测试失效后拆封的双沟槽4H-SiC MOSFET (1200 V/80 mΩ) 俯视图 (a) 4H-SiC功率MOS器件压焊点; (b) UIS测试DUT失效时SEM图
Fig. 3. Top view of the decapsulated DT 4H-SiC MOSFET (1200 V/80 mΩ): (a) Top view of the solder joint; (b) SEM photo of failured DUT UIS test.
图 4 4H-SiC 功率MOS器件栅泄漏电流和阈值电压变化随
$ {E}_{\mathrm{a}\mathrm{v}} $ 变化 (a) 4H-SiC 功率MOS器件栅泄漏电流随$ {E}_{\mathrm{a}\mathrm{v}} $ 的变化; (b)阈值电压随$ {E}_{\mathrm{a}\mathrm{v}} $ 的变化Fig. 4. Gate leakage and
$ {V}_{\mathrm{t}\mathrm{h}} $ of 4H-SiC power MOSFET vs.$ {E}_{\mathrm{a}\mathrm{v}}: $ Gate leakage of 4H-SiC Power MOSFET vs.$\left(\mathrm{b}\right){V}_{\mathrm{t}\mathrm{h}} $ $ \;\mathrm{v}\mathrm{s}.\; {E}_{\mathrm{a}\mathrm{v}}$ 
图 6 界面态密度在禁带中的分布
Fig. 6. SiC/SiO2 interface state density profile used in this simulation.
图 7 实验与仿真转移特性曲线对比
Fig. 7. Transfer characteristics of experiment results vs. simulation one.
图 8 实验与仿真输出特性曲线对比
Fig. 8. Output characteristics of experimental results vs. simulation ones.
图 9 雪崩失效前实验和仿真波形对比(
$ {I}_{\mathrm{a}\mathrm{v}} $ = 14 A )Fig. 9. Comparison of before and after avalanche failure (
$ {I}_{\mathrm{a}\mathrm{v}} $ = 14 A).
图 10 DUT最大结温随
$ {E}_{\mathrm{a}\mathrm{v}} $ 变化和图9(a)点处器件内部温度分布图 DUT最大结温随$ {E}_{\mathrm{a}\mathrm{v}} $ 变化; (b)图9最大结温a点处器件内部温度分布图Fig. 10. Maxium junction temperature vs.
$ {E}_{\mathrm{a}\mathrm{v}} $ and temperature distribution in DUT: (a) Maxium junction temperature; (b) lattice temperature distributionvs.$ {E}_{\mathrm{a}\mathrm{v}} $ of a point in Fig.9.
图 11 器件击穿条件下内部电场分布 (a)内部电场分布(Vds = 1743 V); (b)沿A1-A2和B1-B2方向电场分布
Fig. 11. Electrical field distribution in DUT: (a) Electrical field distribution in DUT(Vds = 1743 V); (b) electrical field along A1-A2 and B1-B2.
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[1] She X, Lucia O, Ozpineci B 2017 IEEE Trans. Ind. Electron. 64 8193
Google Scholar
[2] Huang A Q 2016 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, December 2–6, 2016 p528
[3] Kumar A, Parashar S, Baliga J, Bhattacharya S 2018 IEEE Applied Power Electronics Conference and Exposition (APEC), San Antonio, TX, USA, May 1–3, 2008 p2737
[4] Kumar A, Kokkonda R K, Bhattacharya S, Veliadis V 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Raleigh, NC, USA, 29–31 October, 2019 p438
[5] Sundaresan S, Mulpuri V, Jeliazkov S, Singh R 2019 IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA, March 4–6, 2019 p1
[6] Gao Z, Cao L, Guo Q, Sheng K 2020 IEEE Applied Power Electronics Conference and Exposition (APEC), New Orleans, LA, USA, April 1–3, 2020 p2601
[7] Ren N, Hu H, Wang K L, Zuo Z, Li R, Sheng K 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Chicago, USA, May 13–17, 2018 p431
[8] Yao K, Yano H, Iwamuro N 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) June 2–5, 2021 p115
[9] Wei J X, Liu S Y, Zhao H B, Fu H, Zhang X B, Li S Y, Sun W F 2021 IEEE Trans. Emerg. Sel. Topics Power Electron. 9 2190
Google Scholar
[10] Li X, Tong X, Hu R, Wen Y, Zhu H, Deng X C, Sun Y K, Chen WJ, Bai S, Zhang B 2021 IEEE Trans. Emerg. Sel. Topics Power Electron. 9 2147
Google Scholar
[11] Hatakeyama T, Fukuda K, Okumura H, 2013 IEEE T. on Electron Dev. 60 613
Google Scholar
[12] https://fscdn.rohm.com/en/products/databook/datasheet/discrete/sic/mosfet/sct3080kr-e.pdf
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