硅(001)图形衬底上锗硅纳米线的定位生长

高飞; 冯琦; 王霆; 张建军

doi:10.7498/aps.69.20191407

摘要

纳米线的定位生长是实现纳米线量子器件寻址和集成的前提. 结合自上而下的纳米加工和自下而上的自组装技术, 通过分子束外延生长方法, 在具有周期性凹槽结构的硅(001)图形衬底上首先低温生长硅锗薄膜然后升温退火, 实现了有序锗硅纳米线在凹槽中的定位生长, 锗硅纳米线的表面晶面为(105)晶面. 详细研究了退火温度、硅锗的比例及图形周期对纳米线形成与否, 以及纳米线尺寸的影响.

关键词:

Controllable growth of nanowires is a prerequisite for addressability and scalability of nanowire quantum devices. By combining top-down nanofabrication and bottom-up self-assembly, site-controlled GeSi nanowires with two (105) facets can be grown on Si (001) substrate with pre-patterned trenches. Trenches along the [100] or [010] crystallographic direction with 60 nm in width and 6 nm in height are fabricated on Si substrate by electron beam lithography and reactive ion etching. Subsequently, a 60-nm-thick Si buffer layer is grown at 330–400 ℃ on the patterned substrate to improve the surface quality. The facets at the tip of the trenches transform into (11n) after depositing the Si buffer layer. Self-organized GeSi nanowires form inside the trenches by depositing the 6-nm-thick Si₆₇Ge₃₃ film at 450 ℃ followed by 1 h annealing at 510 ℃. The GeSi nanowires are (105)-faceted with an average height of approximately 7 nm. Furthermore, we systematically study the influence of annealing temperature, Ge concentration and pattern period on the formation of site-controllable GeSi nanowire on a patterned Si (001) substrate. The GeSi nanowires can be formed only inside the trenches within a specific annealing temperature ranging from 500 ℃ to 520 ℃. It is also discovered that GeSi nanowires are very sensitive to Ge concentration, as they cannot form at lower Ge concentration due to a large nucleation energy barrier. In contrast, high Ge concentration will lead to the discontinuity of nanowires caused by higher atomic diffusion barrier. The generated GeSi nanowires in the trenches exhibit similar dimensions at different pattern periods, which indicates that the growth process is thermodynamically determined. Overall, we realize the controllable growth of the GeSi nanowires, while the length of nanowires can reach the millimeter even centimeter scales, replying on the patterned trench length. The above results offer a controllable growth method of the Ge nanowires, which could potentially lead to the scalability of the Ge quantum devices on Si substrates.

Keywords:

作者及机构信息

1.
中国科学院物理研究所, 纳米物理与器件重点实验室, 北京　100190

2.
中国科学院大学, 北京　100049

通信作者: 张建军, jjzhang@iphy.ac.cn

基金项目: 国家重点研发计划(批准号: 2016YFA0301701)和国家自然科学基金(批准号: 11574356, 11434010)资助的课题

Authors and contacts

1.
Key Laboratory of Nanophysics and Device, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

2.
University of Chinese Academy of Sciences, Beijing 100049, China

Corresponding author: Zhang Jian-Jun, jjzhang@iphy.ac.cn

Funds: Project supported by the National Key Technology Research and Development Program of the Ministry of Science and Technology of China (Grant No. 2016YFA0301701) and the National Nature Science Foundation of China (Grant Nos. 11574356, 11434010)

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参考文献

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施引文献

图 1 生长硅缓冲层前(a)和生长硅缓冲层后(b)硅周期性凹槽结构的表面AFM图, 插图分别为生长硅缓冲层前后凹槽末端的放大图

Fig. 1. AFM image of the trench-patterned Si substrate before (a) and after (b) the growth of Si buffer layer, insets are the zoom-in images of one end of a trench before and after the Si buffer layer, respectively.

下载: 全尺寸图片幻灯片

图 2 (a)硅衬底上有序锗硅纳米线的AFM图; (b)单根锗硅纳米线的AFM图; (c)单根纳米线的表面线扫描图, 图中标尺均为500 nm

Fig. 2. (a) AFM image of ordered GeSi wires on trench patterned substrate; (b) AFM image of zoom-in individual GeSi nanowire; (c) AFM linescan along the cross-section of a GeSi nanowire. Inset scale bar: 500 nm.

下载: 全尺寸图片幻灯片

图 3 在硅凹槽结构图形衬底上沉积4 nm的Si₆₇G₃₃薄膜, 然后在不同温度退火后得到的样品表面AFM图　(a) 450 ℃; (b) 500 ℃; (c) 510 ℃; (d) 520 ℃; (e) 530 ℃; (f) 550 ℃

Fig. 3. AFM images of the trench-patterned samples with 4 nm Si₆₇Ge₃₃ film after 1 h annealing at different temperatures: (a) 450 ℃; (b) 500 ℃; (c) 510 ℃; (d) 520 ℃; (e) 530 ℃; (f) 550 ℃.

下载: 全尺寸图片幻灯片

图 4 固定薄膜厚度时, 锗的含量比例对纳米线结构的影响　(a) Si₆₈G₃₂; (b) Si₆₆G₃₄; (c) Si₆₃G₃₇

Fig. 4. The influence of Ge concentration on the formation of SiGe wires when the thickness of SiGe film is fixed: (a) Si₆₈G₃₂; (b) Si₆₆G₃₄; (c) Si₆₃G₃₇.

下载: 全尺寸图片幻灯片

图 5 不同周期图形衬底上锗硅纳米线的表面AFM图　(a)周期为2 µm; (b)周期为500 nm

Fig. 5. AFM images of GeSi wires on trench-patterned Si (001) with different pattern periods: (a) period of 2 µm; (b) period of 500 nm.

下载: 全尺寸图片幻灯片

map

[1]	Loss D, diVincenzo D P 1998 Phys. Rev. A 57 120 Google Scholar
[2]	Petta J R, Johnson A C, Taylor J M, Laird E A, Yacoby A, Lukin M D, Marcus C M, Hanson M P, Gossard A C 2005 Science 309 2180 Google Scholar
[3]	Nowack K C, Koppens F H L, Nazarov Y V, Vandersypen L M K 2007 Science 318 1430 Google Scholar
[4]	Elzerman J M, Hanson R, Greidanus J S, Willems van Beveren L H, de Franceschi S, Vandersypen L M K, Tarucha S, Kouwenhoven L P 2003 Phys. Rev. B 67 161308 Google Scholar
[5]	Bluhm H, Foletti S, Neder I, Rudner M, Mahalu D, Umansky V, Yacoby A 2011 Nat. Phys. 7 109 Google Scholar
[6]	Wang J Y, Huang S Y, Huang G Y, Pan D, Zhao J H, Xu H Q 2017 Nano Lett. 17 4158 Google Scholar
[7]	Koppens F, Buizert C, Tielrooij K J, Vink I T, Nowack K C, Meunier T, Kouwenhoven L P, Vandersypen L 2006 Nature 442 766 Google Scholar
[8]	Hanson R, Kouwenhoven L P, Petta J R, Tarucha S, Vandersypen L M K 2007 Rev. Mod. Phys. 79 1217 Google Scholar
[9]	Khaetskii A V, Loss D, Glazman L 2002 Phys. Rev. Lett. 88 186802 Google Scholar
[10]	Zhong Z, Fang Y, Lu W, Lieber C M 2005 Nano Lett. 5 1143 Google Scholar
[11]	Katsaros G, Spathis P, Stoffel M, Fournel F, Mongillo M, Bouchiat V, Lefloch F, Rastelli A, Schmidt O G, de Franceschi S 2010 Nat. Nanotech. 5 458 Google Scholar
[12]	Hu Y J, Churchill H O H, Reilly D J, Xiang J, Lieber C M, Marcus C M 2007 Nat. Nanotech. 2 622 Google Scholar
[13]	Higginbotham A P, Larsen T W, Yao J, Yan H, Lieber C M, Marcus C M, Kuemmeth F 2014 Nano Lett. 14 3582 Google Scholar
[14]	Li S X, Li Y, Gao F, Xu G, Li H O, Cao G, Xiao M, Wang T, Zhang J J, Guo G P 2017 Appl. Phys. Lett. 110 133105 Google Scholar
[15]	Kloeffel C, Trif M, Loss D 2011 Phys. Rev. B 84 195314 Google Scholar
[16]	Maier F, Klinovaja J, Loss D 2014 Phys. Rev. B 90 195421 Google Scholar
[17]	Watzinger H, Kukučka J, Vukušić L, Gao F, Wang T, Schäffler F, Zhang J J, Katsaros G 2018 Nat. Commun. 9 3902 Google Scholar
[18]	de Vries F K, Shen J, Skolasinski R J, Nowak M P, Varjas D, Wang L, Wimmer M, Ridderbos J, Zwanenburg F A, Li A, Koelling S, Verheijen M A, Bakkers E P A M, Kouwenhoven L P 2018 Nano Lett. 18 6483 Google Scholar
[19]	Li W D, Wu W, Williams R S 2012 J. Vac. Sci. Technol. B 30 06F304 Google Scholar
[20]	Wagner R S, Ellis W C 1964 Appl. Phys. Lett. 4 89 Google Scholar
[21]	Lauhon L J, Gudiksen M S, Wang D, Lieber C M 2002 Nature 420 57 Google Scholar
[22]	Zhang J J, Katsaros G, Montalenti F, Scopece D, Rezaev R O, Mickel C, Rellinghaus B, Miglio L, de Franceschi S, Rastelli A, Schmidt O G 2012 Phys. Rev. Lett. 109 085502 Google Scholar
[23]	Li Y, Li S X, Gao F, Li H O, Xu G, Wang K, Liu D, Cao G, Xiao M, Wang T, Zhang J J, Guo G C, Guo G P 2018 Nano Lett. 18 2091 Google Scholar
[24]	Xu G, Li Y, Gao F, Li H O, Liu H, Wang K, Cao G, Xiao M, Wang T, Zhang J J, Guo G C, Guo G P 2019 arXiv: 1905.01586v1
[25]	Zhang J J, Stoffel M, Rastelli A, Schmidt O G, Jovanović V, Nanver L K, Bauer G 2007 Appl. Phys. Lett. 91 173115 Google Scholar
[26]	Zhong Z Y, Halilovic A, Fromherz T, Schäffler F, Bauera G 2003 Appl. Phys. Lett. 82 4779 Google Scholar
[27]	Chen G, Springholz G, Jantsch W, Schäffler F 2011 Appl. Phys. Lett. 99 043103 Google Scholar
[28]	Du L, Scopece D, Springholz G, Schäffler F, Chen G 2014 Phys. Rev. B 90 075308 Google Scholar
[29]	Kern W, Puotinen D A 1970 RCA Review 31 187
[30]	Eaglesham D J, White A E, Feldman L C, Moriya N, Jacobson D C 1993 Phys. Rev. Lett. 70 1643 Google Scholar
[31]	Gai Z, Yang W S, Sakurai T, Zhao R G 1999 Phys. Rev. B 59 13009 Google Scholar
[32]	Zhong Z, Schwinger W, Schäffler F, Bauer G, Vastola G, Montalenti F, Miglio L 2007 Phys. Rev. Lett. 98 176102 Google Scholar
[33]	Vastola G, Grydlik M, Brehm M, Fromherz T, Bauer G, Boioli F, Miglio L, Montalenti F 2011 Phys. Rev. B. 84 155415 Google Scholar
[34]	Hu H, Gao H J, Liu F 2008 Phys. Rev. Lett. 101 216102 Google Scholar
[35]	Zhang J J, Rastelli A, Schmidt O G, Scopece D, Miglio L, Montalenti F 2013 Appl. Phys. Lett. 103 083109 Google Scholar
[36]	Chen G, Sanduijav B, Matei D, Springholz G, Scopece D, Beck M J, Montalenti F, Miglio L 2012 Phys. Rev. Lett. 108 055503 Google Scholar
[37]	Jesson D E, Chen K M, Pennycook S J, Thundat T, Warmack R J 1996 Phys. Rev. Lett. 77 1330 Google Scholar
[38]	Tersoff J, leGoues F K 1994 Phys. Rev. Lett. 72 3570 Google Scholar
[39]	Shu D J, Liu F, Gong X G 2001 Phys. Rev. B 64 245410 Google Scholar
[40]	Huang L, Liu F, Gong X G 2004 Phys. Rev. B 70 155320 Google Scholar

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硅(001)图形衬底上锗硅纳米线的定位生长