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According to HP memristor model, a grounded memristor emulator is proposed in this paper. Based on the proposed memristor emulator, a universal emulator of mem-elements is implemented with common off-the-shelf components. This universal emulator can transform the grounded memristor into a floating memristor, or a floating meminductor, or a floating memcapacitor by connecting different components to it. Because the universal emulator is floating, it is not confined to be grounded and can be connected between any two voltages. In order to verify theoretical presumptions about the universal emulator, Pspice simulations are conducted on this circuit.
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Keywords:
- mem-elements /
- floating /
- pinched hysteretic curve /
- emulator
[1] Strukov D B, Snider G S, Stewart G R, Williams R S 2008 Nature. 453 80
[2] Chua L O, Kang S M 1976 Proc. IEEE 64 209
[3] Shin S, Kim K, Kang, S M 2011 IEEE Trans. on Nanotechnology 10 266
[4] Ventra M D, Pershin Y V, Chua L O 2009 Proc. IEEE 97 1717
[5] Benderli S, Wey T A 2009 Electron. Lett. 45 377
[6] Batas D, Fiedler H 2011 IEEE Trans. Nanotechnol. 10 250
[7] Rak A, Cserey G 2010 IEEE Transaction on Computer-Aided Design of Integrated Circuits and Systems 29 632
[8] Kvatinsky S, Friedman E G, Kolodny A, Weiser U C 2013 IEEE Transactions on Circuits and Systems I 60 211
[9] Yakopcic C, Taha T M, Subramanyam G, Pino R E, Rogers S 2011 IEEE Electron Device Letters 32 1436
[10] Pershin Y V, Ventra M D 2010 IEEE Transactions on Circuits and Systems I 57 1857
[11] Li Z J, Zeng Y C 2013 Chin. Phys. B 22 040502
[12] Hu F W, Bao B C, Wu H G, Wang C L 2013 Acta Phys. Sin. 62 218401 (in Chinese)[胡丰伟, 包伯成, 武花干, 王春丽 2013 62 218401]
[13] Li Z J, Zeng Y C 2014 Acta Phys. Sin. 63 010502 (in Chinese)[李志军, 曾以成 2014 63 010502]
[14] Kim H, Pd. Sah M, Yang C, Cho S, Chua L O 2012 IEEE Transactions on Circuits and Systems I 59 2422
[15] Pershin Y V, Ventra M D 2010 Electronics Letters 46 517
[16] Wang X Y, Andrew F L, Herbert H C I, Victor S, Qi W G 2012 Chin. Phys. B 21 108501
[17] Jia L N, Huang A P, Zheng X H, Xiao Z Song, Wang M 2012 Acta Phys. Sin. 61 217306 (in Chinese) [贾林楠, 黄安平, 郑晓虎, 肖志松, 王玫 2012 61 217306]
[18] Minaei S, Ibrahim M A 2005 International Journal of Electronic. 92 347
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[1] Strukov D B, Snider G S, Stewart G R, Williams R S 2008 Nature. 453 80
[2] Chua L O, Kang S M 1976 Proc. IEEE 64 209
[3] Shin S, Kim K, Kang, S M 2011 IEEE Trans. on Nanotechnology 10 266
[4] Ventra M D, Pershin Y V, Chua L O 2009 Proc. IEEE 97 1717
[5] Benderli S, Wey T A 2009 Electron. Lett. 45 377
[6] Batas D, Fiedler H 2011 IEEE Trans. Nanotechnol. 10 250
[7] Rak A, Cserey G 2010 IEEE Transaction on Computer-Aided Design of Integrated Circuits and Systems 29 632
[8] Kvatinsky S, Friedman E G, Kolodny A, Weiser U C 2013 IEEE Transactions on Circuits and Systems I 60 211
[9] Yakopcic C, Taha T M, Subramanyam G, Pino R E, Rogers S 2011 IEEE Electron Device Letters 32 1436
[10] Pershin Y V, Ventra M D 2010 IEEE Transactions on Circuits and Systems I 57 1857
[11] Li Z J, Zeng Y C 2013 Chin. Phys. B 22 040502
[12] Hu F W, Bao B C, Wu H G, Wang C L 2013 Acta Phys. Sin. 62 218401 (in Chinese)[胡丰伟, 包伯成, 武花干, 王春丽 2013 62 218401]
[13] Li Z J, Zeng Y C 2014 Acta Phys. Sin. 63 010502 (in Chinese)[李志军, 曾以成 2014 63 010502]
[14] Kim H, Pd. Sah M, Yang C, Cho S, Chua L O 2012 IEEE Transactions on Circuits and Systems I 59 2422
[15] Pershin Y V, Ventra M D 2010 Electronics Letters 46 517
[16] Wang X Y, Andrew F L, Herbert H C I, Victor S, Qi W G 2012 Chin. Phys. B 21 108501
[17] Jia L N, Huang A P, Zheng X H, Xiao Z Song, Wang M 2012 Acta Phys. Sin. 61 217306 (in Chinese) [贾林楠, 黄安平, 郑晓虎, 肖志松, 王玫 2012 61 217306]
[18] Minaei S, Ibrahim M A 2005 International Journal of Electronic. 92 347
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