表面离子阱的衬底效应模型研究及新型离子阱设计

张见; 陈书明; 刘威

doi:10.7498/aps.63.060303

摘要

通过分析表面离子阱衬底的功率损失和电势损失对离子阱阱深和离子加热速率的影响，提出考虑衬底效应的阱深和离子加热速率的解析分析模型. 研究发现，硅基衬底的电势损失对表面离子阱阱深的降幅达17.19%，功率损失对离子加热速率的加速达13.37%. 为了降低衬底效应的不利影响，设计了衬底真空隔离结构的表面离子阱，在离子阱射频电极和直流电极间的衬底表面刻蚀出多条隔离槽，从而减小衬底的等效电导和等效电容，达到降低衬底功率和电势损失的目的. 模拟结果显示，相比于一般结构，真空隔离结构的硅基表面离子阱能够使阱深加深20.22%，使衬底功率损失降低54.55%.

关键词:

Abstract

To analyze the trap depth and ion heating rate of a surface ion trap under the influence of substrate power loss and voltage loss, in this paper we proposes analytic expressions of trap depth and ion heating rate. The results show that the voltage loss of Si substrate can reduce the trap depth by 17.19%, and the power loss would accelerate the ion heating rate by 13.37%. In order to reduce the influence of substrate effect, a new surface ion trap with low self-heating and voltage-loss is proposed in this paper, whose substrate is insulated by some vacuum trench to reduce the equivalent conductivity and capacitance. The simulation results illuminate that compared with the surface ion trap with normal Si-SiO2 substrate, the one with vacuum trench insulation exhibits a 20.22% increase in trap depth and a 54.44% reduction in power loss.

Keywords:

作者及机构信息

1.
国防科学与技术大学计算机学院, 长沙 410073;

2.
国防科学与技术大学并行与分步处理重点实验室, 长沙 410073

Authors and contacts

1.
College of Computer, National University of Defense Technology, Changsha 410073, China;

2.
Science and Technology on PDL, National University of Defense Technology, Changsha 410073, China

参考文献

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施引文献

[1]	Cirac J I, Zoller P 1995 Phys. Rev. Lett. 74 4091
[2]	Jiang Z, Chen P X 2012 Acta Phys. Sin. 61 014209 (in Chinese) [蒋智, 陈平形 2012 61 014209]
[3]	Seidelin S, Chiaverini J, Reichle R, Bollinger J J, Leibfried D, Britton J, Wesenberg J H, Blakestad R B, Epstein R J, Hume D B, Itano W M, Jost J D, Langer C, Ozeri R, Shiga N, Wineland D J 2006 Phys. Rev. Lett. 96 253003
[4]	Kim T H, Herskind P F, Kim T, Kim J, Chuang I L 2010 Phys. Rev. A 82 043412
[5]	Chiaverini J, Blakestad R B, Britton J, JostJ D, Langer C, Leibfried D, Ozeri R, Wineland D J 2005 Quant. Inf. Comp. 5 419
[6]	Chen L, Wan W, Xie Y, Wu Y, Zhou F, Feng M 2013 Chin. Phys. Lett. 30 013702
[7]	Wan W, Chen L, Wu H Y, Xie Y, Zhou F, Feng M 2013 Chin. Phys. Lett. 30 073701
[8]	Wan J Y, Wang Y Z, Liu L 2008 Chin. Phys. B 17 3565
[9]	Dubessy R, Coudreau T, Guidoni L 2009 Phys. Rev. A 80 031402
[10]	Labaziewicz J, Ge Y, Antohi P, Leibrandt D, Brown K R, Chuang I L 2008 Phys. Rev. Lett. 100 013001
[11]	Brownnutt M 2007 Ph. D. Dissertation (London: Imperial College)
[12]	Zheng J, Hahm Y C, Weisshaar A, Tripathi V K 1999 Proc. IEEE 8th Topical Meeting Electrical Performance of Electronic Packaging San Diego, CA, October 25–27 p185
[13]	Kwon Y R, Hietala V M, Champlin K S 1987 IEEE Trans. Microw. Theory Tech. 35 545
[14]	Salvador A B 2008 M. S. Dissertation (Ulm: Ulm University)
[15]	Erin F 2009 Ph. D. Dissertation (Innsbruck: Innsbruck University)
[16]	Pauli A 2011 M. S. Dissertation (Innsbruck: InnsbruckUniversity)
[17]	House M G 2008 Phys. Rev. A 78 033402
[18]	Turchette Q A, Kielpinski D, King B E, Leibfried D, Meekhof D M, Myatt C J, Rowe M A, Sackett C A, Wood C S, Itano W M, Monroe C, Wineland D J 2000 Phys. Rev. A 61 063418

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