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Based on semi-classical theory, a model of the interaction between neutral atoms and the laser standing wave field is established in this paper. The trajectories and the deposition characteristics are analyzed under channel effect, and the values of full width at half maximum of nano-grating are 0.532, 12.16 and 96.70 nm when the divergence angle, spherical and chromatic aberration are discussed, respectively. The simulation results show that the contrast of the stripe decreases with the increasing of divergence angle of the atomic beam. Also, the contrasts of the stripe are 85.2:1 and 5.33:1 when the divergence angles equal 0.1 and 0.3 mrad. When divergence angle increases over 0.5 mrad, the splitting of the stripe takes place, leading to the degradation of the deposition.
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Keywords:
- laser standing wave field /
- nano-grating /
- channel effect
[1] Zhang W T, Zhu B H 2010 Acta Phys. Sin. 59 5392 (in Chinese) [张文涛, 朱保华 2010 59 5392]
[2] Prentiss M, Timp G, Bigelow N 1992 Appl. Phys. Lett. 60 1027
[3] Anderson W R, Brandley C C, McClelland J J 1999 Phys. Rev. A 59 2476
[4] Camposeo A, Cervelli F, Tantussi F 2003 Mater. Sci. Engineer. C 23 1087
[5] Cai W Q, Li Q W 1994 Acta Phys. Sin. 48 611 (in Chinese) [蔡惟泉, 李全文 1994 48 611]
[6] He M, Wang J, Zhan M S 2003 Chin. Opt. Lett. 1 497
[7] Chen Y P, Chen X N, Li Z 2003 Micronanoelectron. Technol. 7 546 (in Chinese) [陈元培, 陈旭南, 李展 2003 微纳电子技术 7 546]
[8] Lu X D, Li T B, Ma Y 2010 Chin. Phys. B 19 123201
[9] Zhang W T, Zhu B H, Huang J, Xiong X M, Jiang Q B 2012 Chin. Phys. B 21 033301
[10] Zhang W T, Zhu B H, Xiong X M 2012 Chin. Phys. Lett. 32 033301
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[1] Zhang W T, Zhu B H 2010 Acta Phys. Sin. 59 5392 (in Chinese) [张文涛, 朱保华 2010 59 5392]
[2] Prentiss M, Timp G, Bigelow N 1992 Appl. Phys. Lett. 60 1027
[3] Anderson W R, Brandley C C, McClelland J J 1999 Phys. Rev. A 59 2476
[4] Camposeo A, Cervelli F, Tantussi F 2003 Mater. Sci. Engineer. C 23 1087
[5] Cai W Q, Li Q W 1994 Acta Phys. Sin. 48 611 (in Chinese) [蔡惟泉, 李全文 1994 48 611]
[6] He M, Wang J, Zhan M S 2003 Chin. Opt. Lett. 1 497
[7] Chen Y P, Chen X N, Li Z 2003 Micronanoelectron. Technol. 7 546 (in Chinese) [陈元培, 陈旭南, 李展 2003 微纳电子技术 7 546]
[8] Lu X D, Li T B, Ma Y 2010 Chin. Phys. B 19 123201
[9] Zhang W T, Zhu B H, Huang J, Xiong X M, Jiang Q B 2012 Chin. Phys. B 21 033301
[10] Zhang W T, Zhu B H, Xiong X M 2012 Chin. Phys. Lett. 32 033301
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