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具有准同型相界组分的0.5Ba(Ti0.8Zr0.2)O3-0.5(Ba0.7Ca0.3)TiO3 (BZT-0.5BCT)陶瓷, 表现出优异的铁电、压电性能, 作为一种具有潜在应用前景的无铅压电材料得到广泛关注. 本文采用溶胶-凝胶方法在Si(100)基底上制备了BZT-0.5BCT压电薄膜. 使用原子力显微镜和扫描电子显微镜测量得到样品的形貌图, 形貌图表明该方法制备的无铅压电薄膜表面光滑, 晶粒大小均匀、呈半球形, 直径为80–100 nm, 厚度为1.7 μm, 膜的内部有气孔.摩擦力实验表明, 压电薄膜样品与硅针尖之间存在静电力的作用, 导致其摩擦力远大于硅针尖与SiO2之间的摩擦力, 但是两者的摩擦系数基本相同.划痕实验表明, BZT-0.5BC薄膜具有很强的法向承载能力, 但是切向抗磨损能力差, 样品的平均弹性模量为23.64 GPa± 5 GPa, 其硬度为2.7–4 GPa, 两者均略低于压电陶瓷Pb(Zr, Ti)O3材料的体态值.As a lead-free piezoelectric material with potential application, 0.5Ba(Ti0.8Zr0.2)O3-0.5(Ba0.7Ca0.3)TiO3 (BZT-0.5BCT) ceramics, which has a morphotropic phase boundary composition, deserves much attention due to its excellent ferroelectric and piezoelectric properties. BZT-0.5BCT lead-free piezoelectric film has been synthesized on a Si (100) substrate by Sol-Gel process. The topography of the film measured using an atomic force microscope and a scanning electron microscope shows that the surface of the prepared film is smooth, and the grain is in the shape of hemisphere with a diameter of 80-100 nm. The film is 1.7 μm in thickness, with pores inside. Friction experiments show that the friction between the tip and the piezoelectric film is much larger than that between the tip and the SiO2 substrate, because of the existence of electrostatic force between the film and the silicon tip. However, the friction coefficients obtained are approximately equal. Nano-scratch experiments show that the BZT-0.5BCT film has a high normal carrying capacity, but a poor tangential wear resistance. The average elastic modulus of the film is 23.64 GPa ± 5 GPa, and its hardness is 2.7-4 GPa, both being slightly lower than those of the bulk value in PZT ceramics.
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Keywords:
- BZT-BCT film /
- nano-friction /
- nanoindentation /
- nano scratch tester
[1] Jaffe B, Cook W, Jaffe H 1971 Piezoeletric Ceramics (New York: Academic Press) p92
[2] Cross E 2004 Nature 432 24
[3] Saito Y, Takao H, Tani T, Nonoyama T, Takatori K, Homma T, Nagaya T, Nakamura M 2004 Nature 432 84
[4] He C, Fu X, Xu F, Wang J, Zhu K, Du C, Liu Y 2012 Chin. Phys. B 21 054207
[5] He C, Xu F, Wang J, Du C, Zhu K, Liu Y 2011 J. Appl. Phys. 110 083513
[6] He C, Chen H, Sun L, Wang J, Xu F, Du C, Zhu K, Liu Y 2012 Cryst. Res. Tech. 47 610
[7] Takenaka T, Nagata H 2005 J. Eur. Ceram. Soc. 25 2693
[8] Ren X B 2004 Nat. Mater. 3 91
[9] Zhang S J, Xia R, Shrout T R, Zang G Z, Wang J F 2006 J. Appl. Phys. 100 104108
[10] Bao H X, Zhou C, Xue D Z, Gao J H, Ren X B 2010 J. Phys. D: Appl. Phys. 43 465401
[11] Shrout T R, Zhang S J 2007 J. Electroceram. 19 111
[12] Liu W F, Ren X B 2009 Phys. Rev. Lett. 103 257602
[13] Hutter J L, Bechhoefer J 1993 Rev. Sci. Instrum. 64 1868
[14] Ogletree D F, Carpick R W, Salmeron M 1996 Rev. Sci. Instrum. 67 3298
[15] Oliver W C, Pharra G M 2004 J. Mater. Res. 19 3
[16] Mate C, McClelland G, Erlandsson R, Chiang S 1987 Phys. Rev. Lett. 591942
[17] Bahr D F, Robach J S, Wring J S, Francis L F, Gerberich W W 1999 Mater. Sci. Eng. A 259 126
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[1] Jaffe B, Cook W, Jaffe H 1971 Piezoeletric Ceramics (New York: Academic Press) p92
[2] Cross E 2004 Nature 432 24
[3] Saito Y, Takao H, Tani T, Nonoyama T, Takatori K, Homma T, Nagaya T, Nakamura M 2004 Nature 432 84
[4] He C, Fu X, Xu F, Wang J, Zhu K, Du C, Liu Y 2012 Chin. Phys. B 21 054207
[5] He C, Xu F, Wang J, Du C, Zhu K, Liu Y 2011 J. Appl. Phys. 110 083513
[6] He C, Chen H, Sun L, Wang J, Xu F, Du C, Zhu K, Liu Y 2012 Cryst. Res. Tech. 47 610
[7] Takenaka T, Nagata H 2005 J. Eur. Ceram. Soc. 25 2693
[8] Ren X B 2004 Nat. Mater. 3 91
[9] Zhang S J, Xia R, Shrout T R, Zang G Z, Wang J F 2006 J. Appl. Phys. 100 104108
[10] Bao H X, Zhou C, Xue D Z, Gao J H, Ren X B 2010 J. Phys. D: Appl. Phys. 43 465401
[11] Shrout T R, Zhang S J 2007 J. Electroceram. 19 111
[12] Liu W F, Ren X B 2009 Phys. Rev. Lett. 103 257602
[13] Hutter J L, Bechhoefer J 1993 Rev. Sci. Instrum. 64 1868
[14] Ogletree D F, Carpick R W, Salmeron M 1996 Rev. Sci. Instrum. 67 3298
[15] Oliver W C, Pharra G M 2004 J. Mater. Res. 19 3
[16] Mate C, McClelland G, Erlandsson R, Chiang S 1987 Phys. Rev. Lett. 591942
[17] Bahr D F, Robach J S, Wring J S, Francis L F, Gerberich W W 1999 Mater. Sci. Eng. A 259 126
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