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The influences of electron and phonon confinement and interface effects on the thermoelectric performance of SrTiO3 nano-ceramic are studied by using the Boltzmann transport equations and density functional calculations. Theoretical calculations show that the figure of merit of nano-ceramic is greatly improved up to 0.8 at room temperature. The improvement is due mainly to the phonon confinement effect and the electronic energy filtering effect at the grain boundary. The electron confinement effect and the interface phonon scattering effect play a supporting role. These results may be conducive to the design of high-performance thermoelectric nano-ceramic.
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Keywords:
- thermoelectric oxide /
- quantum confinement /
- energy filtering /
- inferface scattering
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[14] Callaway J 1959 Phys. Rev. 113 1046
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[18] Zhang R Z, Wang C L, Li J C, Zhang J L, Zhao M L, Liu J, Zheng P, Zhang Y F, Mei L M 2010 Solid State Sci. 12 1168
[19] Mune Y, Ohta H, Koumoto K, Mizoguchi T, Ikuhara Y 2007 Appl. Phys. Lett. 91 192105
[20] Cahill D G, Watson S K, Pohl R O 1992 Phys. Rev. B 46 6131
[21] Kim W, Wang R, Majumdar A 2007 Nano Today 2 40
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[1] Rowe D M 2006 Thermoelectrics Handbook: Macro to Nano, (New York: CRC Press)
[2] Dresselhaus M, Chen G, Tang M, Yang R G, Lee H, Wang D Z, Ren Z F, Fleurial J P, Gogna P 2007 Adv. Mater. 19 1043
[3] Ohta H, Kim S, Mune Y, Mizoguchi T, Nomura K, Ohta S, Nomura T, Nakanishi Y, Ikuhara Y, Hirano M, Hosono H, Koumoto K 2007 Nature Mater. 6 129
[4] Balandin A, Wang K L 1998 J. Appl. Phys. 84 6149
[5] Tripathi M N, Bhandari C M 2007 Euro. Phys. J. B 59 503
[6] Poude L B, Hao Q, Ma Y, Lan Y, Minnich A, Yu B, Yan X, Wang D, Muto A, Vashaee D, Chen X, Liu J, Dresselhaus M S, Chen G, Ren Z 2008 Science 320 634
[7] Vashaee D, Shakouri A 2004 Phys. Rev. Lett. 92 106103
[8] Koumoto K, Wang Y F, Zhang R Z, Fujinami K, Kosuga A, Funahashi R 2010 Ann. Rev. Mater. Res. 40 363
[9] Zhang R Z, Wang C L, Li J C, Mei L M 2009 Acta Phys. Sin. 58 7162 (in Chinese) [张睿智, 王春雷, 李吉超, 梅良模 2009 58 7162]
[10] Shanthi N, Sarma D D 1998 Phys. Rev. B 57 2153
[11] Okuda T, Nakanishi K, Miyasaka S, Tokura Y 2001 Phys. Rev. B 63 113104
[12] Muta H, Kurosaki K, Yamanaka S 2005 J. Alloy. Comp. 392 306
[13] Cui D F, Wang H H, Dai S Y 2002 Acta Phys. Sin. 51 187 (in Chinese) [崔大复, 王焕华, 戴守愚 2002 51 187]
[14] Callaway J 1959 Phys. Rev. 113 1046
[15] Nolas G S, Sharp J, Goldsmid H J 2001 Thermoelectrics: Basic Principles and New Materials Development ( Berlin: Springer)
[16] Yang J, Li H M, Wu T, Zhang W Q, Chen L D, Yang J H 2008 Adv. Funct. Mater. 18 2880
[17] Ohta S, Nomura T, Ohta H, Koumoto K 2005 J. Appl. Phys. 97 034106
[18] Zhang R Z, Wang C L, Li J C, Zhang J L, Zhao M L, Liu J, Zheng P, Zhang Y F, Mei L M 2010 Solid State Sci. 12 1168
[19] Mune Y, Ohta H, Koumoto K, Mizoguchi T, Ikuhara Y 2007 Appl. Phys. Lett. 91 192105
[20] Cahill D G, Watson S K, Pohl R O 1992 Phys. Rev. B 46 6131
[21] Kim W, Wang R, Majumdar A 2007 Nano Today 2 40
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