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基于CdS良好的光学性质和单壁碳纳米管(SWCNT)优异的电子学性质, 制备了纳米CdS/SWCNT复合材料和纳米CdS/聚乙烯亚胺(PEI)功能化SWCNT复合材料, 并利用日光灯光源模拟太阳光研究了它们的光电性质. 结果表明, 纳米CdS/SWCNT复合材料呈现显著的负光电导现象, 而纳米CdS/PEI-SWCNT复合材料呈现强烈的正光电导现象. 用电子转移理论对这一结果进行了解释. 两样品在大角度弯折的情况下, 光电性质均基本没有变化. 因此, 纳米CdS/碳纳米管复合材料在光电领域, 尤其是新兴的柔性光电子学领域有着良好的应用前景.Based on the outstanding optical properties of CdS and excellent electronic properties of single walled carbon nanotube (SWCNT), nano-CdS particle/SWCNT composite materials and nano-CdS/polyethyleneimine (PEI) functionalized SWCNT composite materials are prepared. Their optical and the electrical properties are investigated by using fluorescent light simulated sunlight. The results show that nano-CdS/SWCNT composite material displays a significant negative photo-conductivity phenomenon, while nano-CdS/PEI-SWCNT composite material displays a positive photo-conductivity phenomenon, which can be were explained by using electron-transfer theory. The optical and the electrical properties of two samples are unchanged in the case of large angle bending. Therefore, the nano-CdS/SWCNT composite materials in optical and electrical areas, especially in the emerging field of flexible opto-electronics have a good prospect.
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Keywords:
- carbon nanotube /
- CdS /
- opto-electronic materials /
- composite
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[1] Lai Y H, Lin C Y, Chen H W, Chen J G, Kung C W, Vittal R, Ho K C 2010 J. Mater. Chem. 20 9379
[2] Singh C P, Roy S 2004 Opt. Eng. 43 426
[3] LiuH J, Zhou Y C, Yang Y, Wang W X, Qu L, Chen C, Liu D S, Zhang D Q, Zhu D B 2008 J. Phys. Chem. B 112 6893
[4] Star A, Lu Y, Bradley K, Gruner G 2004 Nano Lett. 4 1587
[5] Lehman J, Sanders A, Hanssen L, Wilthan B, Zeng J A, Jensen C 2010 Nano Lett. 10 3261
[6] Dickerson T J, Tremblay M R, Hoffman T Z, Ruiz D I, Janda K D 2003 J. Am. Chem. Soc. 125 15395
[7] Sun X Y, Lin J 2009 J. Phys. Chem. C 113 4970
[8] Zhang X R, Lin Y H, Zhang J F, He D Q, Wang D J 2010 Acta Phys. -Chim. Sin. 26 2733 (in Chinese) [张晓茹, 林艳红, 张健夫, 何冬青, 王德军 2010 物理化学学报 26 2733]
[9] Mcdonald S A, Konstantatos G, Zhang S, Cyr P W, Klem E J D, Levina L, Sargent E H 2005 Nat. Mater. 4 138
[10] Dai S Y, Kong F T, Hu L H, Shi C W, Fang X Q, Pan X, Wang K J 2005 Acta Phys. Sin. 54 1919 (in Chinese) [戴松元, 孔凡太, 胡林华, 史成武, 方霞琴, 潘 旭, 王孔嘉 2005 54 1919]
[11] Gabor N M, Zhong Z, Bosnick K, Park J, Mceuen P L 2009 Science 325 1367
[12] Streetman B G, Sanjay B 2000 Solid State Electronic Devices (New Jersey: Prentice Hall)
[13] Romeo A, Batzner D L, Zogg H, Vignali C, Tiwari A N 2001 Sol. Energ. Mat. Sol. C 67 311
[14] Hossain M F, Biswas S, Takahashi T 2009 Thin Solid Films 518 1599
[15] Shim M, Javey A, Shi Kam N W, Dai H 2001 J. Am. Chem. Soc. 123 11512
[16] Siddons G P, Merchin D, Back J H, Jeong J K, ShimM2004 Nano Lett. 4 927
[17] Seidel R, Graham A P, Unger E, Duesberg G S, Liebau M, Steinhoegl W, Kreupl F, Hoenlein W, Pompe W 2004 Nano Lett. 4 831
[18] Cao Q, Rogers J A 2009 Adv. Mater. 21 29
[19] Vitmeyer F, Seger B, Kamat P V 2007 Adv. Mater. 19 2935
[20] Shim M, Back J H, Ozel T, Kwon K 2005 Phys. Rev. B 71 205411
[21] Spicer W E, Kindig N B 1964 Solid State Commun. 2 13
[22] Liu P, Sun Q, Zhu F, Liu K, Jiang K, Liu L, Li Q, Fan S 2008 Nano Lett. 8 647
[23] Olek M, Büsgen T, Hilgendorff M, GiersigM2006 J. Phys. Chem. B 110 12901
[24] Liu S, Li J, Shen Q, Cao Y, Guo X, Zhang G, Feng C, Zhang J, Liu Z, Steigerwald M L, Xu D, Nuckolls C 2009 Angew. Chem. 121 4856
[25] Wang W, Kumta P N 2010 ACS Nano 4 2233
[26] Yosida Y, Oguro I 1999 J. Appl. Phys. 86 999
[27] Dang Z M, Wang L, Yin Y, Zhang Q, Lei Q Q 2007 Adv. Mater. 19 852
[28] Yao S H, Dang Z M, Jiang M J, Bai J B 2008 Appl. Phys. Lett. 93 182903
[29] Forrest S R 2004 Nature 428 911
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