下电极对ZnO薄膜电阻开关特性的影响

李红霞; 陈雪平; 陈琪; 毛启楠; 席俊华; 季振国

doi:10.7498/aps.62.077202

摘要

本文采用直流磁控溅射法在三种不同的下电极(BEs)上制备了ZnO薄膜, 获得了W/ZnO/BEs存储器结构. 研究了不同的下电极材料对器件电阻开关特性的影响. 研究结果表明, 以不同下电极所制备的器件都具有单极性电阻开关特性. 在低阻态时, ZnO薄膜的导电机理为欧姆传导, 而高阻态时薄膜的导电机理为空间电荷限制电流. 不同下电极与ZnO薄膜之间的肖特基势垒高度对电阻开关过程中的操作电压有较大的影响, 并基于导电细丝模型对不同下电极上ZnO薄膜的低阻态阻值及reset电流的变化进行了解释.

关键词:

ZnO薄膜 /
电阻开关 /
下电极

Abstract

In this paper, thin films of ZnO were deposited on different bottom electrodes (BEs) by DC magnetron sputtering to fabricate resistive random access memory (ReRAM) with a W/ZnO/BEs structure. The effects of different BEs on the resistive switching characteristics of the fabricated device have been investigated. The results reveal that the devices fabricated on different BEs exhibit reversible and steady unipolar resistive switching behaviors. The conduction behavior in the low resistance state has an Ohmic behavior. However, the conduction mechanism in the high resistance state fits well with the classical space charge limited conduction. Schottky barrier heights between ZnO and different BEs have great effect on the operation voltages during the resistive switching processes. The resistances in low resistance state and the reset currents of the ZnO films fabricated on different BEs were discussed based on the filamentary model.

Keywords:

作者及机构信息

1.
杭州电子科技大学电子材料与器件工艺实验室, 杭州 310018;

2.
浙江大学硅材料国家重点实验室, 杭州 310013

基金项目: 国家自然科学基金 (批准号: 61072015)、浙江省自然科学基金 (批准号: Z4110503, LQ12F05001) 和浙江省教育厅科研项目 (批准号: Y201223083) 资助的课题.

Authors and contacts

1.
Laboratory of Electronic Materials and Devices, Hangzhou Dianzi University, Hangzhou 310018, China;

2.
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310013, China

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 61072015), the Natural Science Foundation of Zhejiang Province, China (Grant Nos. Z4110503, LQ12F05001), and the Scientific Research Foundation of the Education Department of Zhejiang Province, China (Grant No. Y201223083).

参考文献

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施引文献

[1]	Do Y H, Kwak J S, Bae Y C, Lee J H, Kim Y, Im H, Hong J P 2010 Curr. Appl. Phys. 10 E71
[2]	Waser R, Aono M 2007 Nat Mater 6 833
[3]	Jo S H, Kim K H, Lu W 2009 Nano Lett. 9 870
[4]	Ahn S E, Lee M J, Park Y, Kang B S, Lee C B, Kim KH, Seo S, Suh D S, Kim D C, Hur J, Stefanovich G, Yin H, Yoo I K, Lee J H, Park J B, Baek I G, Park B H 2008 Adv. Mater 20 924
[5]	Shi W,Tai Q, Xia X H,Yi M D, Xie L H, Fan Q L, Wang L H, Wei Ang, Huang W 2012 Chin. Phys. Lett. 29 087201
[6]	Gang J L, Li S L, Meng Y, Liao Z L, Liang X J, Chen D M 2009 Acta Phys. Sin. 58 5730 (in Chinese) [刚建雷, 黎松林, 孟洋, 廖昭亮, 梁学锦, 陈东敏 2009 58 5730]
[7]	Xing Z W, Chen X, Wu N J, Ignatiev A 2011 Chin. Phys. B 20 097703
[8]	Park J W, Jung K, Yang M K, Lee J K 2007 2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics Nara-City, Japan, May 27-31,2007,p46
[9]	Chang W Y, Lai Y C, Wu T B, Wang S F, Chen F, Tsai M J 2008 Appl. Phys. Lett. 92 022110
[10]	Jeong D S, Schroeder H, Waser R 2009 Phys. Rev. B 79 195317
[11]	Dong R, Lee D S, Pyun M B, Hasan M, Choi H J, Jo M S, Seong D J, Chang M, Heo S H, Lee J M, Park H K, Hwang H 2008 Appl. Phys. A-Mater. 93 409
[12]	Lee C B, Kang B S, Benayad A, Lee M J, Ahn S E, Kim K H, Stefanovich G., Park Y, Yoo I K 2008 Appl. Phys. Lett. 93 042115
[13]	Liu K C, Tzeng W H, Chang K M, Chan Y C, Kuo C C, Cheng C W 2010 Microelectronics Reliability 50 670
[14]	Xu N, Liu L F, Sun X, Chen C, Wang Y, Han D D, Liu X Y, Han R Q, Kang J F, Yu B 2008 Semicond Sci. Tech. 23 075019
[15]	Oh S C, Jung H Y, Lee H 2011 J. Appl. Phys. 109 124511
[16]	Kim W G, Rhee S W 2010 Microelectronic Engineering 87 98
[17]	YangY C, Pan F, Liu Q ,Liu M, Zeng F 2009 Nano. Lett. 9 1636
[18]	Chen G, Song C, Chen Ch, Gao Sh, Zeng F, Pan F 2012 Adv. Mater. 24 3515
[19]	Chen X M, Wu G H, Bao D H 2008 Appl. Phys. Lett. 93 093501
[20]	Pan F, Chen C, Wang Z S, Yang Y C, Yang J, Zeng F 2010 Progress in Natural Science: Materials International 20 01
[21]	Sundaram K B, Khan A 1997 J. Vac. Sci. Technol. A 15 428
[22]	Baldo M A, O'Brien D F, Thompson M E, Forrest S R 1999 Phys. Rev. B 60 14422
[23]	Alshareef H N, Quevedo-Lopez M A, Majhi P 2011 MRS BULL 36 90

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