A novel silicide technology to improve the thermal stability of the conventional Ni silicide is studied by adding a small quantity of Mo element in Ni flim.The results show that during rapid thermal annealing (RTA) temperature from 650 to 800℃,sheet resistance of Ni(Mo)Si silicide formed is low,whose value is about 2.4(Ω/□).X_ray diffraction(XRD) analysis identifies the existance of NiSi phase and no peak of NiSi2 phase for the above samples.Furthermore,accordin g to the theory on Gibbs free enery,the results show that adding 5.9 atomic% of Mo element can enhance thermal stability of nickel monosilicide.Finally,after annealed at temperatures ranging from 650 to 800℃,Ni(Mo)Si/Si Schottky barrier diodes(SBDs ) are fabricated.Good I_V characteristics of SBD that the range of Schotty b arrier height is from 0.64 to 0.66eV and the ideal factor is close to unity are shown.This further proves that the addition of a little amount of Mo in Ni film can improve the thermal stability of the NiSi film.