We have extended the average-bond-energy method to the study of strained-layer heterojunction band offset. Through a careful study of the effect of hydrostatic strain and uniaxial strain on band offset parameter Emv, we find that the average band offset parameter Emv,av(Emv,av=Em-Ev,av) is largely kept unchanged under different strain conditions. So, in the calculation of strained-layer band offset parameter Emv, it is only required the unstrained band offset parameter Emv,0, a deformation parameter b and the experimental value of spin-orbit splitting Δ0 to calculate the value of strained-layer Emv by simple algebraic operation. Obviously, it will be very convenient to calculate the valence band offset of heterojunction. The simplifed calculation scheme has the characteristic of small calculation amount and the calculation reliability can be improved by using the experimental value.