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铁电薄膜及其集成的铁电器件受到了人们极大的关注。传统铁电薄膜受限于临界尺寸效应，难以在厚度逐渐变薄至纳米甚至单原子层时保持铁电性，这为发展相关纳米电子学器件带来了挑战。二维范德华材料具有天然稳定的层状结构，具有表面平整无悬挂键、无层间界面陷阱、甚至在原子尺度极限厚度下仍能保持完整的物理化学特性的优点，逐渐被人们意识到是实现二维铁电性理想的温床。CuInP2S6、α-In2Se3、WTe2等具有本征铁电极化的二维范德华铁电材料先后被报道，同时人工堆叠的滑移铁电体如t-BN等也逐渐涌现，极大扩充了二维范德华铁电材料的体系结构，为进一步实现铁电的电子元器件微型化和柔韧化提供了新的可能。本文将对近来报道的二维范德华铁电材料的研究进展进行综述，探讨了它们的组分特征、结构特点及性能调控方法，并展望此类材料的应用潜力和未来的研究热点。Ferroelectric thin films and their device applications have drawn wide attentions since 90s of the 20-century. However, due to the critical size effect, ferroelectric thin films cannot maintain the ferroelectric property as their thickness decreases to the nano size or one atomic thick, holding a big challenge for the development of related nano-electronic devices. With a naturally stable layered structure, two-dimensional materials exhibit many advantages such as high-quality and smooth interface without dangling bond, no interlayer interface defects and the ability to maintain complete physical and chemical properties even at limited atomic thickness. Thus, it is gradually realized that two-dimensional material is a good hotbed for the two-dimensional ferroelectricity. CuInP2S6, α-In2Se3, WTe2, and other intrinsic ferroelectric 2D materials have been reported successively while artificially stacked sliding ferroelectrics such as t-BN have also emerged, which expands the types of 2D ferroelectric materials and opens a new road for the further miniaturization and flexibility of ferroelectric electronic devices. In this article, the recent research progress on two-dimensional ferroelectric materials was reviewed, the composition characteristics, structural features and property modulation of two-dimensional ferroelectric materials were discussed, and the application potential and future research hotspots of 2D ferroelectric materials were prospected.
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Keywords:
- Two-dimensional materials /
- Ferroelectrics /
- Room temperature two-dimensional ferroelectricity /
- Ferroelectric devices
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