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中国物理学会期刊

基于二维材料的集成与应用

CSTR: 32037.14.aps.75.20251386

Integration and applications of two-dimensional materials

CSTR: 32037.14.aps.75.20251386
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  • 在后摩尔时代, 随着器件物理尺寸的缩放极限和冯·诺依曼架构的局限性逐渐显现, 传统硅基集成电路领域面临严峻挑战. 然而, 二维层状材料凭借无悬挂键、高载流子迁移率、高光生载流子浓度等独特的物理特性, 有望突破这些瓶颈. 目前, 许多二维材料已经实现了规模化生长与应用, 在高性能单一功能器件、多功能融合器件、逻辑电路和集成芯片制造与应用当中展现出巨大的潜力. 本文综述了二维材料的基本特性、构成的基础功能器件、功能电路模块以及三维集成等方面的研究进展, 重点探讨了二维材料在规模化集成方案方面的挑战和解决路径, 并为未来的发展方向提出了展望.

     

    As Moore’s Law encounters limitations in scaling device physical dimensions and reducing computational power consumption, traditional silicon-based integrated circuit (IC) technologies, which have enjoyed half a century of success, are facing unprecedented challenges. These limitations are especially apparent in emerging fields such as artificial intelligence, big data processing, and high-performance computing, where the demand for computational power and energy efficiency is growing. Therefore, the exploration of novel materials and hardware architectures is crucial to address these challenges. Two-dimensional (2D) materials have become ideal candidates for the next-generation electronic devices and integrated circuits (ICs) due to their unique physical properties such as the absence of dangling bonds, high carrier mobility, tunable band gaps, and high photonic responses. Notably, 2D materials such as graphene, transition metal dichalcogenides (TMDs), and hexagonal boron nitride (h-BN) have demonstrated immense potential in electronics, optoelectronics, and flexible sensing applications.
    This paper comprehensively reviews the recent advancements in the application of 2D materials in integrated circuits, analyzing the challenges and solutions related to large-scale integration, device design, functional circuit modules, and three-dimensional integration. Through a detailed examination of the basic properties of 2D materials, their constituent functional devices, and multifunctional integrated circuits, this paper presents a series of innovative ideas and methods, demonstrating the promising application prospects of 2D materials in future ICs.
    The research method involves a detailed analysis of the physical properties of common 2D materials such as graphene, TMDs, and h-BN, with typical application cases explored. This paper discusse how to utilize the excellent properties of these materials to fabricate high-performance single-function devices, integrated circuit modules, and 3D integrated chips, especially focusing on solving the challenges related to large-scale growth, device integration, and interface engineering of 2D materials. The comparison of the performance and applications between various materials demonstrates the unique advantages of 2D materials in the semiconductor industry and their potential in IC design.
    Although 2D materials perform well in laboratory environments, there are still significant challenges in practical applications, especially in large-scale production, device integration, and three-dimensional integration. Achieving high-quality, large-area growth of 2D materials, reducing interface defects, and improving device stability and reliability are still core issues that need to be addressed in research and industry. However, with the continuous advancements in 2D material fabrication technology and optimization of integration processes, these challenges are gradually being overcome, and the application prospects of 2D materials are expanding.

     

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