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Mg-doped Sn-based single crystalline samples Ba8Ga16-XMgXSn30(0 X 1.5) were grown from Sn flux to characterize their structural and electrical transport properties. Research results show that the prepared compounds are well indexed by the type-Ⅷ clathrate structure with a space group I43 m. With the increase in Mg content, the melting point of the corresponding compounds increases. On the contrary, the lattice constant decreases. The actual content of filling atomic Ba in doped samples is below the ideal value of 8.0, the occupancy of Ba in the dodecahedron is about 0.93 for the sample with X=1.5. All the samples show n-type conduction. The Mg atoms have an effect on the band structure of the materials, and the carrier concentrations in the doped samples are reduced. However, the absolute values of Seebeck coefficient and the resistivity of doped compounds increase, respectively. By calculation, the sample of X=1.5 obtains the maximum value of power factor 1.2610-3 Wm-1K-2 near 430 K.
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Keywords:
- Ⅷ-type clathrate /
- n-type conduction /
- single crystalline
[1] Huo D, Sakata T, Sasakawa T, Avila M A, Tsubota M, Iga F, Fukuoka H, Yamanaka S, Aoyagi S, Takabatake T 2005 Phys. Rev. B 71 075113
[2] Deng S K, Saiga Y, Suekuni K, Takabatake T 2010 J. Appl. Phys. 108 073705
[3] [4] Deng S K, Saiga Y, Kajisa K, Takabatake T 2011 J. Appl. Phys. 109 103704
[5] [6] [7] Du B L, Saiga Y, Kajisa K, Takabatake T 2012 J. Appl. Phys. 111 013707
[8] Deng S K, Li D C, Shen L X, Hao R T, Takabatake T 2012 Chin. Phys. B 21 017401
[9] [10] [11] Slack G A 1995 Handbook of Thermoelectrics CRC 1995
[12] CahilI D G, Watson S K, Pohl R O 1992 Phys. Rev. B 46 6131
[13] [14] Avila M A, Suekuni K, Umeo K, Fukuoka H, Yamanaka S, Takabatake T 2006 Phys. Rev. B 74 125109
[15] [16] Suekuni K, Avila M A, Umeo K, Fukuoka H, Yamanaka S, Nakagawa T, Takabatake T 2008 Phys. Rev. B 77 235119
[17] [18] Sasaki Y, Kishimoto K, Koyanagi T, Asada H, Akai K 2009 Appl. Phys. Lett. 105 073702
[19] [20] [21] Bentien A, Pacheco V, Paschen S, Grin Y, Steglich F 2005 Phys. Rev. B 71 165206
[22] [23] Phan M H, Woods G T, Chaturvedi A, Stefanoski S, Nolas G S, Srikant H 2008 Appl. Phys. Lett. 93 252505
[24] Pacheco V, Bentien A, Carrillo-Cabrera W, Paschen S, Steglich F, Grin Y 2005 Phys. Rev. B 71 165205
[25] [26] Kishimoto K, Ikeda N, Akai K, Koyanagi T 2008 Appl. Phys. Express 1 031201
[27] [28] Chen Y X, Du B L, Saiga Y, Kajisa K, Takabatake T 2013 J. Appl. Phys. 46 205302
[29] [30] Saiga Y, Suekuni K, Deng S K, Yamamoto T, Kono Y, Ohya N and Takabatake T 2010 J. Alloy. Compd. 507 1
[31] [32] Deng S K 2008 Ph. D. Preparation (Hubei: Wuhan University of Technology) (in Chinese)[邓书康 2008 博士学位 (湖北: 武汉理工大学)]
[33] [34] Kono Y, Akai K, Ohya1 N, Saiga Y, Suekuni K, Takabatake T, Yamamoto S 2012 Mater. Trans 53 636
[35] [36] [37] Meng D Y, Shen L X, Shai X X, Dong G J, Deng S K 2013 Acta Phys. Sin. 62 247401
[38] Carrillo C W, Budnyk S, Prots Y, Grin Y 2004 Anorg. Allg. Chem. 630 2267
[39] [40] Zhao J, Buldum A, Lu J P 1999 Phys. Rev. B 60 14177
[41] [42] [43] Zhao J T, Corbett J D 1994 Inorg. Chem. 33 5721
[44] Blake N P, Latturner S, Bryan J D 2001 J. Chem. Phys. 115 8060
[45] -
[1] Huo D, Sakata T, Sasakawa T, Avila M A, Tsubota M, Iga F, Fukuoka H, Yamanaka S, Aoyagi S, Takabatake T 2005 Phys. Rev. B 71 075113
[2] Deng S K, Saiga Y, Suekuni K, Takabatake T 2010 J. Appl. Phys. 108 073705
[3] [4] Deng S K, Saiga Y, Kajisa K, Takabatake T 2011 J. Appl. Phys. 109 103704
[5] [6] [7] Du B L, Saiga Y, Kajisa K, Takabatake T 2012 J. Appl. Phys. 111 013707
[8] Deng S K, Li D C, Shen L X, Hao R T, Takabatake T 2012 Chin. Phys. B 21 017401
[9] [10] [11] Slack G A 1995 Handbook of Thermoelectrics CRC 1995
[12] CahilI D G, Watson S K, Pohl R O 1992 Phys. Rev. B 46 6131
[13] [14] Avila M A, Suekuni K, Umeo K, Fukuoka H, Yamanaka S, Takabatake T 2006 Phys. Rev. B 74 125109
[15] [16] Suekuni K, Avila M A, Umeo K, Fukuoka H, Yamanaka S, Nakagawa T, Takabatake T 2008 Phys. Rev. B 77 235119
[17] [18] Sasaki Y, Kishimoto K, Koyanagi T, Asada H, Akai K 2009 Appl. Phys. Lett. 105 073702
[19] [20] [21] Bentien A, Pacheco V, Paschen S, Grin Y, Steglich F 2005 Phys. Rev. B 71 165206
[22] [23] Phan M H, Woods G T, Chaturvedi A, Stefanoski S, Nolas G S, Srikant H 2008 Appl. Phys. Lett. 93 252505
[24] Pacheco V, Bentien A, Carrillo-Cabrera W, Paschen S, Steglich F, Grin Y 2005 Phys. Rev. B 71 165205
[25] [26] Kishimoto K, Ikeda N, Akai K, Koyanagi T 2008 Appl. Phys. Express 1 031201
[27] [28] Chen Y X, Du B L, Saiga Y, Kajisa K, Takabatake T 2013 J. Appl. Phys. 46 205302
[29] [30] Saiga Y, Suekuni K, Deng S K, Yamamoto T, Kono Y, Ohya N and Takabatake T 2010 J. Alloy. Compd. 507 1
[31] [32] Deng S K 2008 Ph. D. Preparation (Hubei: Wuhan University of Technology) (in Chinese)[邓书康 2008 博士学位 (湖北: 武汉理工大学)]
[33] [34] Kono Y, Akai K, Ohya1 N, Saiga Y, Suekuni K, Takabatake T, Yamamoto S 2012 Mater. Trans 53 636
[35] [36] [37] Meng D Y, Shen L X, Shai X X, Dong G J, Deng S K 2013 Acta Phys. Sin. 62 247401
[38] Carrillo C W, Budnyk S, Prots Y, Grin Y 2004 Anorg. Allg. Chem. 630 2267
[39] [40] Zhao J, Buldum A, Lu J P 1999 Phys. Rev. B 60 14177
[41] [42] [43] Zhao J T, Corbett J D 1994 Inorg. Chem. 33 5721
[44] Blake N P, Latturner S, Bryan J D 2001 J. Chem. Phys. 115 8060
[45]
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