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Manganese cobalt nickel complex oxide is a thermal-sensitive material with the property of semiconductor. In this paper, Mn1.74Co0.72Ni0.54O4 (MCN) thin film was prepared in air using metal-organic-deposition method at room temperature on Si substrate, and the crystallization synthesis of the MCN thin film was prepared using alcohol-thermal reaction. According to X-ray diffraction, field emission scanning electron microscope (FESEM) and the relationship between resistivity and temperature, effects of MCN thin film made by alcohol-thermal reaction on crystalline microstructure, surface morphology and electrical properties were investigated. X-ray diffraction pattern showed that the MCN thin film appears to be spinel structure with predominant spinel peaks. Field emission scanning electron microscope showed that the surface morphology of MCN thin film is crack-free and compact surface. The relationship between resistivity and temperature of the thin film Mn1.74Co0.72Ni0.54O4 was that the resistivity decreases with the increase in temperature. The room temperature(≈ 27℃) resistivity of the MCN thin film was 303.13 Ω·cm.
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Keywords:
- alcohol-thermal reaction /
- manganese cobalt nickel thin film /
- thermistor /
- low temperature synthesis
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[2] Hu W, Qin N, Wu G H, Lin Y, Li S, Bao D H 2012 J. Am. Chem. Soc. 134 14658
[3] Yuan C L, Liu X Y, Liang M F, Zhou C R, Wang H 2011 Sens. Actuators A 167 291
[4] Cheng F Y, Shen J, Peng B, Pan Y D, Tao Z L, Chen J 2011 J. Nat. Chem. 3 79
[5] Kanade S A, Puri V 2006 Mater. Lett. 60 1428
[6] Ge Y J, Huang Z M, Hou Y, Qin J H, Li T X, Chu J H 2008 Thin Solid Films 516 5931
[7] Kanade S A, Puri V 2009 J. Alloys Compd. 475 352
[8] He L, Ling Z Y, Huang Y T, Liu Y S 2011 Mater. Lett. 65 1632
[9] Song W K, Schulze H M, Saint John D B, Podraza N J, Dickey E C, Trolier McKinstry S S 2012 J. Am. Ceram. Soc. 95 2562
[10] Sun J J, Tuo W L, Chang A M, Zhao Q, Lan Y Q 2006 J. Funct. Mater. Devices 12 361 (in Chinese) [孙俊菊, 妥万禄, 常爱民, 赵青, 兰玉歧 2006 功能材料与器件学报 12 361]
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[12] Prado-Gonjal J, Ávila D, Villafuerte-Castrejón M E, González-García F, Fuentes L, Gómez R W, Pérez-Mazariego J L, Marquina V, Morán E 2011 Solid State Sci 13 2030
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[14] Yuan R L, Shi E W, Xia C T, Wang B G, Zhong W Z 1996 Acta Phys. Sin. 12 131 (in Chinese) [元如林, 施尔畏, 夏长泰, 王步国, 仲维卓 1996 12 131]
[15] Shweta J, Sunit R, Suresh G, Amalnerkar D 2011 Microelectron. Eng. 88 82
[16] Sun S Y, Zhang Q H, Yu J G 2010 J. Inorg. Mater. 25 626
[17] Zhang L, Zhang Y, Deng J G, Dai H X 2012 J. Nat. Gas Chem. 21 69
[18] Basu A, Brinkman A W, Schmida R, Klusek Z, Kowalczyk P, Datta P K 2004 J. Eu. Ceram. Soc. 24 1149
[19] Park K 2006 J. Eu. Ceram. Soc. 26 909
[20] Jadhav R, Kulkarni D, Puri V 2010 J. Mater. Sci.: Mater. Electron. 21 503
[21] He L, Ling Z Y 2011 Appl. Phys. Lett. 98 242112
[22] Ma J, Hu J M, Li Z, Nan C W 2011 Adv. Mater. 23 1062
[23] Kulkarni D C, Patil S P, Puri V 2008 Microelectron. J. 39 248
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[1] Kukuruznyak D A, Bulkley S A, Omland K A, Ohuchi F S, Gregg M C 2001 Thin Solid Films 385 89
[2] Hu W, Qin N, Wu G H, Lin Y, Li S, Bao D H 2012 J. Am. Chem. Soc. 134 14658
[3] Yuan C L, Liu X Y, Liang M F, Zhou C R, Wang H 2011 Sens. Actuators A 167 291
[4] Cheng F Y, Shen J, Peng B, Pan Y D, Tao Z L, Chen J 2011 J. Nat. Chem. 3 79
[5] Kanade S A, Puri V 2006 Mater. Lett. 60 1428
[6] Ge Y J, Huang Z M, Hou Y, Qin J H, Li T X, Chu J H 2008 Thin Solid Films 516 5931
[7] Kanade S A, Puri V 2009 J. Alloys Compd. 475 352
[8] He L, Ling Z Y, Huang Y T, Liu Y S 2011 Mater. Lett. 65 1632
[9] Song W K, Schulze H M, Saint John D B, Podraza N J, Dickey E C, Trolier McKinstry S S 2012 J. Am. Ceram. Soc. 95 2562
[10] Sun J J, Tuo W L, Chang A M, Zhao Q, Lan Y Q 2006 J. Funct. Mater. Devices 12 361 (in Chinese) [孙俊菊, 妥万禄, 常爱民, 赵青, 兰玉歧 2006 功能材料与器件学报 12 361]
[11] Wang L M, Wei Z R, Wu F 2002 J. Heb. Univer. (Nat Sci. Edition) 22 345 (in Chinese) [王立明, 韦志仁, 吴峰 2002 河北大学学报 (自然科学版) 22 345]
[12] Prado-Gonjal J, Ávila D, Villafuerte-Castrejón M E, González-García F, Fuentes L, Gómez R W, Pérez-Mazariego J L, Marquina V, Morán E 2011 Solid State Sci 13 2030
[13] Tan H, Tao M D, Song S G 1994 Funct. Mater. 25 350 (in Chinese) [谭辉, 陶明德, 宋世庚 1994 功能材料 25 350]
[14] Yuan R L, Shi E W, Xia C T, Wang B G, Zhong W Z 1996 Acta Phys. Sin. 12 131 (in Chinese) [元如林, 施尔畏, 夏长泰, 王步国, 仲维卓 1996 12 131]
[15] Shweta J, Sunit R, Suresh G, Amalnerkar D 2011 Microelectron. Eng. 88 82
[16] Sun S Y, Zhang Q H, Yu J G 2010 J. Inorg. Mater. 25 626
[17] Zhang L, Zhang Y, Deng J G, Dai H X 2012 J. Nat. Gas Chem. 21 69
[18] Basu A, Brinkman A W, Schmida R, Klusek Z, Kowalczyk P, Datta P K 2004 J. Eu. Ceram. Soc. 24 1149
[19] Park K 2006 J. Eu. Ceram. Soc. 26 909
[20] Jadhav R, Kulkarni D, Puri V 2010 J. Mater. Sci.: Mater. Electron. 21 503
[21] He L, Ling Z Y 2011 Appl. Phys. Lett. 98 242112
[22] Ma J, Hu J M, Li Z, Nan C W 2011 Adv. Mater. 23 1062
[23] Kulkarni D C, Patil S P, Puri V 2008 Microelectron. J. 39 248
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