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The surface state properties (such as surface state density, time constant and level position related to the bottom of InAlN conduction band) of Ni/Au/-InAlN Schottky barrier diodes with nearly lattice matched (InN=18%) and tensilely (15%) or compressively (21%) strained InAlN barrier layer were evaluated, by using current-voltage (I-V), frequency-dependent capacitance-voltage (C-V) measurements and atomic force microscope (AFM) images. It was found that, with increasing content of In the surface state density increased and the barrier height of the Schottky contacts decreased, respectively. The C-V curves shifted toward the positive bias values with reducing measured frequencies, which became more apparent with increasing In content. It may be due to the hole emission from the surface states of Ni/Au/-InAlN Schottcky contacts. Atomic force microscope (AFM) images indicated that the InAlN surface became rougher with increasing In content, which may be the main reason for the increased surface state densities.
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Keywords:
- InAlN materal with different In content /
- surface states /
- I-V characteristics /
- frequency dependent C-V characteristics
[1] Yue Y Z, Hu Z Y, Guo J, Sensale-Rodriguez B, Li G W, Wang R H, Faiza F, Fang T, Song B, Gao X, Guo S P, Kosel T, Snider G, Fay P, Jena D, Xing H L 2012 IEEE Electron Device Lett. 33 988
[2] Maier D, Alomari M, Grandjean N, Carlin J F, Diforte-Poisson M A, Dua C, Delage S, Kohn E 2012 IEEE Electron Device Lett. 33 985
[3] Lee H S, Piedra D, Sun M, Gao X, Guo S, Palacios T 2012 IEEE Electron Device Lett. 33 982
[4] Tlek R, Ilgaz A, Gökden S, Teke A, Öztrk M K, Kasap M, Özçelik S, Arslan E, Özbay E 2009 J. Appl. Phys. 105 013707
[5] Tirelli S, Marti D, Sun H, Alt A R, Carlin J F, Grandjean M N, Bolognesi C R 2011 IEEE Electron Device Lett. 32 13648
[6] Choi S, Kim H J, Lochner Z, Zhang Y, Lee Y C, Shen S C, Ryou J H, Dupuis R D 2010 Appl. Phys. Lett. 96 243506
[7] Mikulics M, Stoklas R, Dadgar A, Gregušová D, Novák J, Grtzmacher D, Krost A, Kordoš P 2010 Appl. Phys. Lett. 97 173505
[8] Lin F 2011 Ph.D. Dissertation (Beijing: Peking University) p64 (in Chinese) [林芳 2011 博士论文 (北京: 北京大学)]
[9] Rhoderick E H, Williams R H 1988 Metal-Semiconducter Contacts (Oxford, U.K. Clarendon Press)
[10] Frost S R 1987 Heterojunction Band Discontinuities physics and Devices (North Holland, Amsterdam Press) p359
[11] Levinshtein M, Rumyantsev S L, Shur M 2003 Properties of Advanced Semiconductor Materials (Chemical Industry Press) pp42-66 (in Chinese) [杨树人, 段景智编译 2003 先进半导体材料性能与数据手册 (北京: 化学工业出版社) 第42-66页]
[12] Hasegawa H, Oyama S 2002 J. Vac. Sci. Technol. B 20 1647
[13] Michaelson H B 1978 J. Res. Device 22 72
[14] Lee C T, Lin Y J, Liu D S 2001 Appl. Phys. Lett. 79 2573
[15] Kuzmík J 2002 Semicond. Sci. Technol. 17 540
[16] Monch W(edited) 1995 Semiconductor Surface and Interface (Springer, Berlin, Press)
[17] Arslan E, Btn S, dSafak Y, Ozbay E 2010 J. Electron.Mater. 39 2681
[18] Ozdemir A F, Turut A, Kokce A 2003 Thin. Sol. Films 425 210
[19] Irokawa Y, Matsuki N, Sumiya M, Sakuma Y, Sekiguchi T, Chikyo T, Sumida Y, Nakano Y 2010 Phys. Stat. Sol. C 7 1928
[20] Wang R X, Xu S J, Shi S L, Beling C D, Fung S, Zhao D G, Yang H, Tao X M 2006 Appl. Phys. Lett. 89 143505
[21] Osvald J 2011 J.Appl. Phys. 110 073702
[22] Ťapajma M, Čičo K, Kuzmík J, Pogany D, Pozzovivo G, Strasser G, Carlin J F, Gradjean N, Fröhlich .2009 Semicond. Sci. Technol 24 035008
[23] Nicollian E H, Goetzberger A 1967 Bell Sys. Tech. 46 1055
[24] Jrgen H,Werner and Herbert H. Gijttler 1991 J. Appl. Phys. 69 1522
[25] Chen Z T, Fujita K, Ichikawa J, Egawa T 2011 IEEE Electron Device Letts. 32 620
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[1] Yue Y Z, Hu Z Y, Guo J, Sensale-Rodriguez B, Li G W, Wang R H, Faiza F, Fang T, Song B, Gao X, Guo S P, Kosel T, Snider G, Fay P, Jena D, Xing H L 2012 IEEE Electron Device Lett. 33 988
[2] Maier D, Alomari M, Grandjean N, Carlin J F, Diforte-Poisson M A, Dua C, Delage S, Kohn E 2012 IEEE Electron Device Lett. 33 985
[3] Lee H S, Piedra D, Sun M, Gao X, Guo S, Palacios T 2012 IEEE Electron Device Lett. 33 982
[4] Tlek R, Ilgaz A, Gökden S, Teke A, Öztrk M K, Kasap M, Özçelik S, Arslan E, Özbay E 2009 J. Appl. Phys. 105 013707
[5] Tirelli S, Marti D, Sun H, Alt A R, Carlin J F, Grandjean M N, Bolognesi C R 2011 IEEE Electron Device Lett. 32 13648
[6] Choi S, Kim H J, Lochner Z, Zhang Y, Lee Y C, Shen S C, Ryou J H, Dupuis R D 2010 Appl. Phys. Lett. 96 243506
[7] Mikulics M, Stoklas R, Dadgar A, Gregušová D, Novák J, Grtzmacher D, Krost A, Kordoš P 2010 Appl. Phys. Lett. 97 173505
[8] Lin F 2011 Ph.D. Dissertation (Beijing: Peking University) p64 (in Chinese) [林芳 2011 博士论文 (北京: 北京大学)]
[9] Rhoderick E H, Williams R H 1988 Metal-Semiconducter Contacts (Oxford, U.K. Clarendon Press)
[10] Frost S R 1987 Heterojunction Band Discontinuities physics and Devices (North Holland, Amsterdam Press) p359
[11] Levinshtein M, Rumyantsev S L, Shur M 2003 Properties of Advanced Semiconductor Materials (Chemical Industry Press) pp42-66 (in Chinese) [杨树人, 段景智编译 2003 先进半导体材料性能与数据手册 (北京: 化学工业出版社) 第42-66页]
[12] Hasegawa H, Oyama S 2002 J. Vac. Sci. Technol. B 20 1647
[13] Michaelson H B 1978 J. Res. Device 22 72
[14] Lee C T, Lin Y J, Liu D S 2001 Appl. Phys. Lett. 79 2573
[15] Kuzmík J 2002 Semicond. Sci. Technol. 17 540
[16] Monch W(edited) 1995 Semiconductor Surface and Interface (Springer, Berlin, Press)
[17] Arslan E, Btn S, dSafak Y, Ozbay E 2010 J. Electron.Mater. 39 2681
[18] Ozdemir A F, Turut A, Kokce A 2003 Thin. Sol. Films 425 210
[19] Irokawa Y, Matsuki N, Sumiya M, Sakuma Y, Sekiguchi T, Chikyo T, Sumida Y, Nakano Y 2010 Phys. Stat. Sol. C 7 1928
[20] Wang R X, Xu S J, Shi S L, Beling C D, Fung S, Zhao D G, Yang H, Tao X M 2006 Appl. Phys. Lett. 89 143505
[21] Osvald J 2011 J.Appl. Phys. 110 073702
[22] Ťapajma M, Čičo K, Kuzmík J, Pogany D, Pozzovivo G, Strasser G, Carlin J F, Gradjean N, Fröhlich .2009 Semicond. Sci. Technol 24 035008
[23] Nicollian E H, Goetzberger A 1967 Bell Sys. Tech. 46 1055
[24] Jrgen H,Werner and Herbert H. Gijttler 1991 J. Appl. Phys. 69 1522
[25] Chen Z T, Fujita K, Ichikawa J, Egawa T 2011 IEEE Electron Device Letts. 32 620
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