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The magnetic tunnel junction with a structure of IrMn/CoFe/AlOx/CoFe is deposited by magnetron sputtering and annealed at different temperatures in a magnetic field of parallel to the orienting field. Vibrating sample magnetometer is used to record the magnetic hysteresis loop at room temperature, and scanning probe microscope is used to record the interface morphology. The influence of annealing on thermal stability of the magnetic tunnel junction is investigated by holding the film in its negative saturation field. After annealing, the exchange bias increases due to the enhancement of unidirectional anisotropy of antiferromagnetic layer. The recoil loop of the pinned ferromagnetic layer shifts towards the positive field, and the exchange bias field decreases monotonically, with the film held in a negative saturation field, whereas annealing reduces the reduction speed of Hex.
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Keywords:
- magnetic tunnel junction /
- exchange bias /
- magnetization reversal
[1] Victora R H, Chen X 2010 IEEE Trans. Magn. 46 702
[2] Lee K, Kang S H 2010 IEEE Trans. Magn. 46 1537
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[8] Qi X J, Wang Y G, Zhou G H, Li Z Q, Guo M 2010 Chin. Phys. B 19 037503
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[12] Li F F, Sharif R, Jiang L X, Zhang X Q, Han X F, Wang Y, Zhang Z 2005 J. Appl. Phys. 98 113710
[13] [14] [15] Ma Q L, Feng J F, Feng G, Oguz K, Han X F, Coey J M D 2010 J. Magn. Magn. Mater. 322 108
[16] Feng Y Q, Hou L N, Zhu T, Yao S D, Zhan W S 2005 Acta Phys. Sin. 54 4340 (in Chinese) [冯玉清、侯利娜、朱 涛、姚淑德、詹文山 2005 54 4340]
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[19] [20] Park C M, Min K L, Shin K H 1996 J. Appl. Phys. 79 6228
[21] [22] [23] Shen J X, Kief M T 1996 J. Appl. Phys. 79 5008
[24] Nascimento V P, Passamani E C, Alvarenga A D, Pelegrini F, Biondo A, Saitovitch E B 2008 J. Magn. Magn. Mater. 320 e272
[25] [26] Km J V, Stamps R L 2001 Appl. Phys. Lett. 79 2785
[27] [28] [29] Wang Y G, Petford-Long A K 2004 J. Magn. Magn. Mater. 279 82
[30] [31] Hughes T, OGrady K, Laidler H, Chantrell R W 2001 J. Magn. Magn. Mater. 235 329
[32] [33] Hughes T, Laidler H, OGrady K 2001 J. Appl. Phys. 89 5585
[34] Vallejo-Fernandez G, Fernandez-outon L E, OGrady K 2008 J. Appl. Phys. 103 07C101
[35] [36] Xi H W, Franzen S, Mao S, White R M 2007 Phys. Rev. B 75 014434
[37] -
[1] Victora R H, Chen X 2010 IEEE Trans. Magn. 46 702
[2] Lee K, Kang S H 2010 IEEE Trans. Magn. 46 1537
[3] [4] Cao J, Freitas P P 2010 J. Appl. Phys. 107 09E712
[5] [6] [7] Meiklejohn W H, Bean C P 1956 Phys. Rev. 102 1413
[8] Qi X J, Wang Y G, Zhou G H, Li Z Q, Guo M 2010 Chin. Phys. B 19 037503
[9] [10] [11] Chai C L, Teng J, Yu G H, Zhu F W, Lai W Y, Xiao J M 2002 Acta Phys. Sin. 51 1846 (in Chinese)[柴春林、滕 蛟、于广华、朱逢吾、赖武彦、肖纪美 2002 51 1846]
[12] Li F F, Sharif R, Jiang L X, Zhang X Q, Han X F, Wang Y, Zhang Z 2005 J. Appl. Phys. 98 113710
[13] [14] [15] Ma Q L, Feng J F, Feng G, Oguz K, Han X F, Coey J M D 2010 J. Magn. Magn. Mater. 322 108
[16] Feng Y Q, Hou L N, Zhu T, Yao S D, Zhan W S 2005 Acta Phys. Sin. 54 4340 (in Chinese) [冯玉清、侯利娜、朱 涛、姚淑德、詹文山 2005 54 4340]
[17] [18] Li H H, Freitas P P, Wang Z J, Sousa J B, Gogol P, Chapman J 2001 J. Appl. Phys. 89 6904
[19] [20] Park C M, Min K L, Shin K H 1996 J. Appl. Phys. 79 6228
[21] [22] [23] Shen J X, Kief M T 1996 J. Appl. Phys. 79 5008
[24] Nascimento V P, Passamani E C, Alvarenga A D, Pelegrini F, Biondo A, Saitovitch E B 2008 J. Magn. Magn. Mater. 320 e272
[25] [26] Km J V, Stamps R L 2001 Appl. Phys. Lett. 79 2785
[27] [28] [29] Wang Y G, Petford-Long A K 2004 J. Magn. Magn. Mater. 279 82
[30] [31] Hughes T, OGrady K, Laidler H, Chantrell R W 2001 J. Magn. Magn. Mater. 235 329
[32] [33] Hughes T, Laidler H, OGrady K 2001 J. Appl. Phys. 89 5585
[34] Vallejo-Fernandez G, Fernandez-outon L E, OGrady K 2008 J. Appl. Phys. 103 07C101
[35] [36] Xi H W, Franzen S, Mao S, White R M 2007 Phys. Rev. B 75 014434
[37]
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