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In this article. We report on the study of mosaic structures of different thick GaN films grown on sapphire (0001) by metalorganic chemical vapor deposition (MOCVD), using high resolution x-ray diffraction. The result from the symmetrical reflections show that the mosaic vertical and lateral correlation lengths that are calculated by two methods increase with film thickness increasing, and the vertical correlation lengths are close to the film thickness, and the same trend in the lateral correlation lengths derived from the reciprocal space maps. By the help of asymmetrical reflections and Williamson-Hall extrapolation method, the tilt and twist mosaic drop with thickness increasing at different rates. All this shows that the increase in thickness lads to the more uniform and neat grain arrangement and the higher-quality epitaxial wafers.
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Keywords:
- GaN thin film /
- mosaic structure /
- thickness
[1] Nakamura S Senoh M 1997 The blue laser diode (Berlin: Springer-Verlag)
[2] Xu Z J 2007 Detection and Analysis of Semiconductor (Beijing: Science press) p 153 (in Chinese) [许振嘉 2007 半导体的检测与分析 (北京：科学出版社) 第153页]
[3] Chierhia R, Bottcher T, Heinke H, Einfeldt S, Figge S, Hommel D 2003 J. Appl. Phys. 96 8918
[4] Liu B, Zhang R, Xie Z L, Lu H, Liu Q J, Zhang Z, Li Y, Xiu X Q, Chen P, Han P, Gu S L, Shi Y, Zheng Y D, Schaff W J 2008 J. Appl. Phys. 103 02504
[5] Xie Z L, Zhang R, Fu D Y, Liu B, Xiu X Q, Hua X M, Zhao H, Chen P, Han P, Shi Y, Zheng Y D 2011 Chin Phys. B 20 116801
[6] Srikant V, Speck J S, Clarke D R 1997 J. Appl. Phys. 82 4286
[7] Liu J Q, Qiu Y X, Wang J F, Xu K, Yang H 2011 Chin. Phys. Lett. 28 016101
[8] Keijser D, Mittemeijer T H, Rozendaal H C F 1983 J. Appl. Crystallogr 16 309
[9] Metzger T, Hopler R, Born E, Ambacher O, Stutzmann M, Stommer R, Schuster M, Gobel H, Christiansen S, Albrecht M, Strunk H P 1998 Philos. Mag. A 77 1013
[10] Li H T, Luo Y, Xi G Y, Wang L, Jiang Y, Zhao W, Han Y J, Hao Z B, Sun C Z 2008 Acta. Phys. Sin. 57 7119 (in Chinese) [李洪涛, 罗毅, 席光义, 汪莱, 江洋, 赵维, 韩彦军, 郝智彪, 孙长征 2008 57 7119]
[11] Williams A D, Moustakas T D 2007 J. Crystal Growth 300 37
[12] Wang L J, Zhang S M, Wang Y T, Jiang D S, Zhu J J, Zhao D G, Liu Z S, Wang H, Shi Y S, Wang H, Liu S Y, Yang H 2009 Chin. Phys. Lett. 26 076104
[13] Williamson G K, Hall W H 1953 Acta. Metall. 1 22
[14] Fewster P 2000 X-Ray Scattering from Semiconductors (London: Imperial College Press)
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[1] Nakamura S Senoh M 1997 The blue laser diode (Berlin: Springer-Verlag)
[2] Xu Z J 2007 Detection and Analysis of Semiconductor (Beijing: Science press) p 153 (in Chinese) [许振嘉 2007 半导体的检测与分析 (北京：科学出版社) 第153页]
[3] Chierhia R, Bottcher T, Heinke H, Einfeldt S, Figge S, Hommel D 2003 J. Appl. Phys. 96 8918
[4] Liu B, Zhang R, Xie Z L, Lu H, Liu Q J, Zhang Z, Li Y, Xiu X Q, Chen P, Han P, Gu S L, Shi Y, Zheng Y D, Schaff W J 2008 J. Appl. Phys. 103 02504
[5] Xie Z L, Zhang R, Fu D Y, Liu B, Xiu X Q, Hua X M, Zhao H, Chen P, Han P, Shi Y, Zheng Y D 2011 Chin Phys. B 20 116801
[6] Srikant V, Speck J S, Clarke D R 1997 J. Appl. Phys. 82 4286
[7] Liu J Q, Qiu Y X, Wang J F, Xu K, Yang H 2011 Chin. Phys. Lett. 28 016101
[8] Keijser D, Mittemeijer T H, Rozendaal H C F 1983 J. Appl. Crystallogr 16 309
[9] Metzger T, Hopler R, Born E, Ambacher O, Stutzmann M, Stommer R, Schuster M, Gobel H, Christiansen S, Albrecht M, Strunk H P 1998 Philos. Mag. A 77 1013
[10] Li H T, Luo Y, Xi G Y, Wang L, Jiang Y, Zhao W, Han Y J, Hao Z B, Sun C Z 2008 Acta. Phys. Sin. 57 7119 (in Chinese) [李洪涛, 罗毅, 席光义, 汪莱, 江洋, 赵维, 韩彦军, 郝智彪, 孙长征 2008 57 7119]
[11] Williams A D, Moustakas T D 2007 J. Crystal Growth 300 37
[12] Wang L J, Zhang S M, Wang Y T, Jiang D S, Zhu J J, Zhao D G, Liu Z S, Wang H, Shi Y S, Wang H, Liu S Y, Yang H 2009 Chin. Phys. Lett. 26 076104
[13] Williamson G K, Hall W H 1953 Acta. Metall. 1 22
[14] Fewster P 2000 X-Ray Scattering from Semiconductors (London: Imperial College Press)
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