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In this paper, ultra-thin Nd2O3 dielectric films are deposited on p-type silicon substrates by advanced atomic layer deposition method. Nd (thd)3 and O3 are used as the reaction precursors separately. The as-grown samples are annealed in N2 atmosphere in a temperature range of 700900 ℃. The samples are investigated at room temperature by X-ray photoelectron spectroscopy and the changes of the film composition at different annealing temperatures are discussed in detail. For a higher precursor temperature of 185 ℃ in the deposition process, the ratio of oxygen to neodymium atoms for the as-grown film is 1.82, which is close to the stoichiometry. Dielectric constant increases from 6.85 to 10.32.
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Keywords:
- atomic layer deposition /
- Nd2O3 /
- precursor temperature /
- X-ray phoroelectron spectroscopy
[1] Duan T L, Yu H Y, Wu L, Wang Z R, Foo Y L, Pan J S 2011 Appl. Phys. Lett. 99 012902
[2] Wang H, Wang Y, Feng J, Ye C, Wang B Y, Wang H B, Li Q, Jiang Y, Huang A P, Xiao Z S 2008 Appl. Phys. A Mat. Sci. Process 93 681
[3] Huang L, Huang A P, Zheng X H, Xiao Z S, Wang M 2012 Acta Phys. Sin. 61 137303 (in Chinese) [黄力, 黄安平, 郑晓虎, 肖志松, 王玫 2012 61 137303]
[4] Pavunny S P, Thomas R, Kumar A, Murari N M, Katiyar R S 2012 J. Appl. Phys. 111 102811
[5] Kosola A, Paivasaari J, Putkonen M, Niinisto L 2005 Thin Solid Films 479 152
[6] Busani T, Devine R A B, Gonon P 2006 Electrochem. Soc. Trans. 1 331
[7] Liu H X, Kuang Q W, Wang Z L, Gao B, Wang S L, Hao Y 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology Shanghai, China, November 1-4, 2010, p982
[8] Zhao C, Zhao C Z, Werner M, Taylor S, Chalker P R 2012 International Scholarly Research Network Nanotechnology 2012 Article ID 689023
[9] Wang J Q, Wu W H, Feng D M 1992 Electron Spectroscopy: An Introduction (Beijing: National Defense Industry Press) p542 (in Chinese) [王建祺, 吴文辉, 冯大明 1992 电子能谱学引论 (北京: 国防工业出版社) 第542页]
[10] Wang X M, Zeng X Q, Wu G S, Yao S S, Li L B 2007 Appl. Surf. Sci. 253 9017
[11] Ogawa A, Iwamoto K, Ota H, Morita Y, Ikeda M, Nabatame T, Toriumi A 2007 Microelectron. Eng. 84 1861
[12] Renault O, Samour D, Damlencourt J F, Blin D, Martin F, Marthon S, Barrett N T, Besson P 2002 Appl. Phys. Lett. 81 3627
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[1] Duan T L, Yu H Y, Wu L, Wang Z R, Foo Y L, Pan J S 2011 Appl. Phys. Lett. 99 012902
[2] Wang H, Wang Y, Feng J, Ye C, Wang B Y, Wang H B, Li Q, Jiang Y, Huang A P, Xiao Z S 2008 Appl. Phys. A Mat. Sci. Process 93 681
[3] Huang L, Huang A P, Zheng X H, Xiao Z S, Wang M 2012 Acta Phys. Sin. 61 137303 (in Chinese) [黄力, 黄安平, 郑晓虎, 肖志松, 王玫 2012 61 137303]
[4] Pavunny S P, Thomas R, Kumar A, Murari N M, Katiyar R S 2012 J. Appl. Phys. 111 102811
[5] Kosola A, Paivasaari J, Putkonen M, Niinisto L 2005 Thin Solid Films 479 152
[6] Busani T, Devine R A B, Gonon P 2006 Electrochem. Soc. Trans. 1 331
[7] Liu H X, Kuang Q W, Wang Z L, Gao B, Wang S L, Hao Y 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology Shanghai, China, November 1-4, 2010, p982
[8] Zhao C, Zhao C Z, Werner M, Taylor S, Chalker P R 2012 International Scholarly Research Network Nanotechnology 2012 Article ID 689023
[9] Wang J Q, Wu W H, Feng D M 1992 Electron Spectroscopy: An Introduction (Beijing: National Defense Industry Press) p542 (in Chinese) [王建祺, 吴文辉, 冯大明 1992 电子能谱学引论 (北京: 国防工业出版社) 第542页]
[10] Wang X M, Zeng X Q, Wu G S, Yao S S, Li L B 2007 Appl. Surf. Sci. 253 9017
[11] Ogawa A, Iwamoto K, Ota H, Morita Y, Ikeda M, Nabatame T, Toriumi A 2007 Microelectron. Eng. 84 1861
[12] Renault O, Samour D, Damlencourt J F, Blin D, Martin F, Marthon S, Barrett N T, Besson P 2002 Appl. Phys. Lett. 81 3627
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