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Staggered double vane slow wave structure (SWS) and sheet electron beam are employed to investigate a 140 GHz high power traveling wave tube. Numerical calculation of eigenmode shows that the SWS has a good characteristic of dispersion and interaction impedance. The transition structure, input/output coupler and concentrated attenuator are especially proposed for the circuit to ensure that the tube will work well. Particle-in-cell simulation results demonstrate that the traveling wave tube can provide over 300 W of peak power in a frequency range of 132-152 GHz with a maximum of 546 W and a corresponding gain of 37.37 dB at 138 GHz assuming a beam power to be 5.115 kW and input power to be 0.1 W. The output power of the tube can exceed 440 W in a frequency range of 128-152 GHz with a corresponding interaction efficiency of over 8.6% when the input powers range from 0.027 W to 0.46 W. Such a traveling wave tube has a great significance and a potential application in high power short millimeter wave field.
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Keywords:
- staggered double vane /
- traveling-wave tube /
- sheet electron beam /
- 140 GHz
[1] Joye C D, Shapiro M A, Sirigiri J R, Temkin R J 2009 IEEE Trans. Electron Devices 56 818
[2] Wang G Q, Wang J G, Li X Z, Fan R Y, Wang X Z, Wang X F, Tong C J 2010 Acta Phys. Sin. 59 8459 (in Chinese) [王光强, 王建国, 李小泽, 范如玉, 王行舟, 王雪峰, 童长江 2010 59 8459]
[3] Feng J J, Hu Y F, Cai J, Wu X P, Tang Y 2010 Vacuum Electronics 2 27 (in Chinese) [冯进军, 胡银富, 蔡军, 邬显平, 唐烨 2010 真空电子技术 2 27]
[4] Peng W F, Hu Y L, Yang Z H, Li J Q, Lu Q R, Li B 2010 Acta Phys. Sin. 59 8478 (in Chinese) [彭维峰, 胡玉禄, 杨中海, 李建清, 陆麒如, 李斌 2010 59 8478]
[5] Qu B, Feng J J 2010 Vacuum Electronics 2 16 (in Chinese) [瞿波, 冯进军 2010 真空电子技术 2 16]
[6] Ding Y G, Liu P K, Zheng Z C, Wang Y, Shen B 2011 High Power Laser and Particle beams 23 1989 (in Chinese) [丁耀根, 刘濮鲲, 张兆传, 王勇, 沈斌 2011 强激光与粒子束 23 1989]
[7] Liu S G, Li H F, Wang W X, Mo Y L 1985 Introduction to Microwave Electronics (Beijing: National Defense Industry Press) p252-269 (in Chinese) [刘盛纲, 李宏福, 王文祥, 莫元龙 1985 微波电子学导论 (北京:国防工业出版社) 第252-269页]
[8] He J, Wei Y Y, Gong Y B, Duan Z Y, Wang W X 2010 Acta Phys. Sin. 59 2843 (in Chinese) [何俊, 魏彦玉, 宫玉彬, 段兆云, 王文祥 2010 59 2843]
[9] Alaria M K, Bera A, Sharma R K, Srivastava V 2011 IEEE trans. Plasmas science 39 550
[10] Peng W F, Yang Z H, Hu Y L, Li J Q, Lu Q R, Li B 2011 Chin. Phys. B 20 078401
[11] Gong Y B, Deng M J, Duan Z Y, Lu M Y, Wei Y Y, Wang W X 2007 Acta Phys. Sin. 56 4497 (in Chinese) [宫玉彬, 邓明金, 段兆云, 吕明毅, 魏彦玉, 王文祥 2007 56 4497]
[12] Shin Y M, Barnett L R, Baig A, Tsai W C, Luhmann N C Jr. 2011 Proc. IEEE Int. Vac. Electron. Conf. Bangalore, India, February 21-24, 2011 p61
[13] Gong Y B, Yin H R, Yue L N, Lu Z G, Wei Y Y, Feng J J, Duan Z Y, Xu X 2011 IEEE Trans. Plasma Science 39 847
[14] Carlsten B E, Russell S J, Earley L M, Krawczyk F L, Potter J M, Ferguson P, Humphries S Jr. 2005 IEEE Trans. Plasma Sci. 33 85
[15] Lai J Q, Gong Y B, Xu X, Wei Y Y, DuanZ Y, Yue L N, Wang W X China Patent CN201010594432.1 [2010-6-29] (in Chinese) [赖剑强, 宫玉彬, 许雄, 魏彦玉, 段兆云, 岳玲娜, 王文祥 中国专利 CN201010594432.1 [2010-6-29]]
[16] Nguyen K T, Pasour J A, Antonsen T M Jr, Larsen P B, Petillo J J, Levush B 2009 IEEE Trans. Electron devices 55 744
[17] Zhao D 2010 Acta Phys. Sin. 59 1712 (in Chinese) [赵鼎 2010 59 1712]
[18] Lai J Q, Gong Y B, Wei Y Y, Duan Z Y, Huang M Z, Wang W X China Patent CN201120106737.3 [2011.10.5] (in Chinese) [赖剑强, 宫玉彬, 魏彦玉, 段兆云, 黄民智, 王文祥 中国专利CN201120106737.3 [2011.10.5]]
[19] Li H Y, Feng J J, Bai G D 2011 Proc. IEEE Int. Vac. Electron. Conf. Bangalore, India, February 21-24, 2011 p379
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[1] Joye C D, Shapiro M A, Sirigiri J R, Temkin R J 2009 IEEE Trans. Electron Devices 56 818
[2] Wang G Q, Wang J G, Li X Z, Fan R Y, Wang X Z, Wang X F, Tong C J 2010 Acta Phys. Sin. 59 8459 (in Chinese) [王光强, 王建国, 李小泽, 范如玉, 王行舟, 王雪峰, 童长江 2010 59 8459]
[3] Feng J J, Hu Y F, Cai J, Wu X P, Tang Y 2010 Vacuum Electronics 2 27 (in Chinese) [冯进军, 胡银富, 蔡军, 邬显平, 唐烨 2010 真空电子技术 2 27]
[4] Peng W F, Hu Y L, Yang Z H, Li J Q, Lu Q R, Li B 2010 Acta Phys. Sin. 59 8478 (in Chinese) [彭维峰, 胡玉禄, 杨中海, 李建清, 陆麒如, 李斌 2010 59 8478]
[5] Qu B, Feng J J 2010 Vacuum Electronics 2 16 (in Chinese) [瞿波, 冯进军 2010 真空电子技术 2 16]
[6] Ding Y G, Liu P K, Zheng Z C, Wang Y, Shen B 2011 High Power Laser and Particle beams 23 1989 (in Chinese) [丁耀根, 刘濮鲲, 张兆传, 王勇, 沈斌 2011 强激光与粒子束 23 1989]
[7] Liu S G, Li H F, Wang W X, Mo Y L 1985 Introduction to Microwave Electronics (Beijing: National Defense Industry Press) p252-269 (in Chinese) [刘盛纲, 李宏福, 王文祥, 莫元龙 1985 微波电子学导论 (北京:国防工业出版社) 第252-269页]
[8] He J, Wei Y Y, Gong Y B, Duan Z Y, Wang W X 2010 Acta Phys. Sin. 59 2843 (in Chinese) [何俊, 魏彦玉, 宫玉彬, 段兆云, 王文祥 2010 59 2843]
[9] Alaria M K, Bera A, Sharma R K, Srivastava V 2011 IEEE trans. Plasmas science 39 550
[10] Peng W F, Yang Z H, Hu Y L, Li J Q, Lu Q R, Li B 2011 Chin. Phys. B 20 078401
[11] Gong Y B, Deng M J, Duan Z Y, Lu M Y, Wei Y Y, Wang W X 2007 Acta Phys. Sin. 56 4497 (in Chinese) [宫玉彬, 邓明金, 段兆云, 吕明毅, 魏彦玉, 王文祥 2007 56 4497]
[12] Shin Y M, Barnett L R, Baig A, Tsai W C, Luhmann N C Jr. 2011 Proc. IEEE Int. Vac. Electron. Conf. Bangalore, India, February 21-24, 2011 p61
[13] Gong Y B, Yin H R, Yue L N, Lu Z G, Wei Y Y, Feng J J, Duan Z Y, Xu X 2011 IEEE Trans. Plasma Science 39 847
[14] Carlsten B E, Russell S J, Earley L M, Krawczyk F L, Potter J M, Ferguson P, Humphries S Jr. 2005 IEEE Trans. Plasma Sci. 33 85
[15] Lai J Q, Gong Y B, Xu X, Wei Y Y, DuanZ Y, Yue L N, Wang W X China Patent CN201010594432.1 [2010-6-29] (in Chinese) [赖剑强, 宫玉彬, 许雄, 魏彦玉, 段兆云, 岳玲娜, 王文祥 中国专利 CN201010594432.1 [2010-6-29]]
[16] Nguyen K T, Pasour J A, Antonsen T M Jr, Larsen P B, Petillo J J, Levush B 2009 IEEE Trans. Electron devices 55 744
[17] Zhao D 2010 Acta Phys. Sin. 59 1712 (in Chinese) [赵鼎 2010 59 1712]
[18] Lai J Q, Gong Y B, Wei Y Y, Duan Z Y, Huang M Z, Wang W X China Patent CN201120106737.3 [2011.10.5] (in Chinese) [赖剑强, 宫玉彬, 魏彦玉, 段兆云, 黄民智, 王文祥 中国专利CN201120106737.3 [2011.10.5]]
[19] Li H Y, Feng J J, Bai G D 2011 Proc. IEEE Int. Vac. Electron. Conf. Bangalore, India, February 21-24, 2011 p379
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