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Reliability assessment of SiN MIM capacitors in GaN MMIC is performed by constant voltage stress test. Two kinds of failure modes, critical charge density at which the dielectric breaks down and mean time prior to failure are investigated. The trap energy level in SiN dielectric is obtained by temperature dependent current characteristics. The degradation mechanism of SiN MIM capacitor is analyzed. The research shows that new donor-like traps are generated at dominant position during the stress. And the trap energy level becomes deeper after stress. The increased trap accelerates the scattering of the carrier, which leads to the decrease of leakage current in the end. The investigation on the failure mechanism of SiN MIM capacitor provides a reference for reinforcing the dielectric capacitors.
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Keywords:
- SiN /
- MIM capacitor /
- trap /
- MTTF
[1] Dammann M, Ca uml sar M, Konstanzer H, Waltereit P, Quay R, Bronner W, Kiefer R, Mu uml ller S, Mikulla M, van der Wel P J, Ro uml dle T, Bourgeois F, Riepe K 2010 IEEE International Reliability Physics Symposium Anaheim CA, USA, May 2-6, 2010 p129
[2] Waltereit P, Bronner W, Quay R, Dammann M, Kiefer R, Muller S, Musser M, Kuhn J, van Raay F, Seelmann M, Mikulla M, Ambacher O, van Rijs F, Rodle T, Riepe K 2009 Phys. Status Solidi A 206 1215
[3] Scarpulla J, Eng D C, Olson S R,Wu C S 1999 37th Ieee International Reliability Physics Symposium Proceedings, San Diego CA, USA, March 23-25, 1999 p128
[4] Cramer H C, Oliver J D, Porter R J 2006 CS MANTECH Conference, Vanco uver, British Columbia, Canada, April 24-27, 2006 p91
[5] Sefa D, Del Alamo J A, Gajewski D A, Allen H 2009 CS MANTECH Conference, Tampa Florida, USA, May 18-21, 2009
[6] Slater R D 2010 CS MANTECH Conference, Portland Oregon, USA, May 17-20, 2010
[7] Berman A 1981 19th Annual Reliability Physics Proceedings, Orlando FL, USA, April 7-9, 1981 p204
[8] Hu H S, Zhang M, Lin L J 2000 Acta Electron. Sinica 28 80 (in Chinese) [胡恒升, 张敏, 林立谨 2000 电子学报 28 80]
[9] Lai S K 1983 J. Appl. Phys. 54 2540
[10] Scott R S, Dumin N A, Hughes T W, Dumin D J, Moore B T 1995 33rd IEEE International Reliability Physics Symposium Proceedings Las Vegas NV, USA, April 4-6, 1995 p131
[11] Scarpulla J, Ahlers E D, Eng D C, Leung D L, Olson S R, Chan-Shin W 1998 GaAs Reliability Workshop Proceedings, Atlanta GA, USA, November 1, 1998 p92
[12] Huang Y, Niu L R, Lin L 2005 Reseach & Progress of SSE 25 315 (in Chinese) [黄云, 钮利荣, 林丽 2005 固体电子学研究与进展 25 315]
[13] Ryuzaki D, Ishida T, Furusawa T 2003 J. Electrochem. Soc. 150 F203
[14] Yeargan J R, Taylor H L 1968 J. Appl. Phys. 39 5600
[15] Yeats B 1998 IEEE Trans. Electron Dev. 45 939
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[1] Dammann M, Ca uml sar M, Konstanzer H, Waltereit P, Quay R, Bronner W, Kiefer R, Mu uml ller S, Mikulla M, van der Wel P J, Ro uml dle T, Bourgeois F, Riepe K 2010 IEEE International Reliability Physics Symposium Anaheim CA, USA, May 2-6, 2010 p129
[2] Waltereit P, Bronner W, Quay R, Dammann M, Kiefer R, Muller S, Musser M, Kuhn J, van Raay F, Seelmann M, Mikulla M, Ambacher O, van Rijs F, Rodle T, Riepe K 2009 Phys. Status Solidi A 206 1215
[3] Scarpulla J, Eng D C, Olson S R,Wu C S 1999 37th Ieee International Reliability Physics Symposium Proceedings, San Diego CA, USA, March 23-25, 1999 p128
[4] Cramer H C, Oliver J D, Porter R J 2006 CS MANTECH Conference, Vanco uver, British Columbia, Canada, April 24-27, 2006 p91
[5] Sefa D, Del Alamo J A, Gajewski D A, Allen H 2009 CS MANTECH Conference, Tampa Florida, USA, May 18-21, 2009
[6] Slater R D 2010 CS MANTECH Conference, Portland Oregon, USA, May 17-20, 2010
[7] Berman A 1981 19th Annual Reliability Physics Proceedings, Orlando FL, USA, April 7-9, 1981 p204
[8] Hu H S, Zhang M, Lin L J 2000 Acta Electron. Sinica 28 80 (in Chinese) [胡恒升, 张敏, 林立谨 2000 电子学报 28 80]
[9] Lai S K 1983 J. Appl. Phys. 54 2540
[10] Scott R S, Dumin N A, Hughes T W, Dumin D J, Moore B T 1995 33rd IEEE International Reliability Physics Symposium Proceedings Las Vegas NV, USA, April 4-6, 1995 p131
[11] Scarpulla J, Ahlers E D, Eng D C, Leung D L, Olson S R, Chan-Shin W 1998 GaAs Reliability Workshop Proceedings, Atlanta GA, USA, November 1, 1998 p92
[12] Huang Y, Niu L R, Lin L 2005 Reseach & Progress of SSE 25 315 (in Chinese) [黄云, 钮利荣, 林丽 2005 固体电子学研究与进展 25 315]
[13] Ryuzaki D, Ishida T, Furusawa T 2003 J. Electrochem. Soc. 150 F203
[14] Yeargan J R, Taylor H L 1968 J. Appl. Phys. 39 5600
[15] Yeats B 1998 IEEE Trans. Electron Dev. 45 939
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