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Injector-like nanostructure samples of ZnO, which are synthesized by hydrothermal method, are experimentally investigated for the field emission (FE) properties, especially the current density varying with the intensity of the applied electric field; and the fascinating two-stage behavior of electric field enhancement factor (β) is observed. The good performance and the two-stage behavior of the β are explained based on the combination of the intensive electric field effect in semiconductor and its influence on the Fermi energy level with the effective series connection circuit of FE detection systems. Finally, the previous analysis conclusion is well experimentally demonstrated by the FE properties and PL spectra of Znic oxide nanostrucutres fabricated by electrochemically deposition and vapor phase transmitting methods, separately.
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Keywords:
- field emission /
- intensive field effect /
- defect states /
- resistive voltage divider in series
[1] Buldum A, Lu J P 2003 Phys. Rev. Lett. 91 236801
[2] Deheer W A, Chatelainand A, Uqarte D 1995 Science 279 1179
[3] Ng K L, Yuan J, Cheung J T, Cheah K W 2002 Appl. Surf. Sci. 214 351
[4] Liu X C, Lu Z H, Zhang F M 2010 Chin. Phys. B 19 027502
[5] Gao L, Zhang J M 2009 Chin. Phys. B 18 4536
[6] Xu C X, Sun X W, Chen B J 2004 Appl. Phys. Lett. 84 1540
[7] Xu C X, Sun X W 2004 J. Nanotechnology 1 452
[8] Wei A, Xu C X, Sun X W, Huang W, Lo G Q 2008 J. of Display Tech. 4 9
[9] Xu C X, Sun X W, Dong Z L, Zhu G P, Cui Y P 2007 Solid State Phenomena 121 813
[10] Xu C X, Sun X W, Zhu G P, Cui Y P 2006 App. Phys. Lett. 88 161921-1
[11] Yuan Y H, Hou X, Bai J T 2006 Acta Photonica Sin. 35 373 (in Chinese) [袁艳红、侯 洵、白晋涛 2009 光子学报 35 373]
[12] Yang Y F, Long H, Yang G, Zheng Q G, Li Y H, Lu P X 2009 Acta Phys. Sin. 58 2785 (in Chinese) [杨义发、龙 华、杨 光、郑启华、李玉华、陆培祥 2009 58 2785]
[13] Zuo C Y, Wen J, Bai Y L 2010 Chin. Phys. B 19 047101
[14] Zhang F C, Zhang Z Y, Zhang W H, Yan J F, Yong J N 2010 Chin. Phys. B 19 2508
[15] Paul E, Andrea L, Karsten A 2005 Phys. Review B 72 085213-1
[16] Monticone S, Tufeu R, Kanaev A V 1998 J. Phys. Chem. B 102 2854
[17] Lee C J, Lee T J, Lee S C, Lyu Y, Zhang H, Ruh H J 2002 Appl. Phys. Lett. 81 3648
[18] Fursey G N, Glazanov D V 1998 J. Vac. Sci. Tech. 16 910
[19] Xiao J, Bai X, Zhang G M 2008 Acta Phys. Sin. 57 7057 (in Chinese)[肖 竞、柏 鑫、张耿民 2008 57 7057]
[20] Wang Y J, Wang L D, Yang M, Liu G Q Yan C 2010 Acta Phys. Sin. 59 4950 (in Chinese ) [王益军、王六定、杨 敏、刘光清、严 诚 2010 59 4950]
[21] Chen J, Jin G J, Ma Y Q 2009 Acta Phys. Sin. 58 2707 (in Chinese) [陈 静、金国钧、马余强 2009 58 2707]
[22] Liu E K, Zhu B S, Luo J S 2003 Edition 6 (Beijing: Publishing House of Electronics Industry)110-138(in Chinese) [刘恩科、朱秉升、罗晋生 2003 第六版(北京:电子工业出版社)]
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[1] Buldum A, Lu J P 2003 Phys. Rev. Lett. 91 236801
[2] Deheer W A, Chatelainand A, Uqarte D 1995 Science 279 1179
[3] Ng K L, Yuan J, Cheung J T, Cheah K W 2002 Appl. Surf. Sci. 214 351
[4] Liu X C, Lu Z H, Zhang F M 2010 Chin. Phys. B 19 027502
[5] Gao L, Zhang J M 2009 Chin. Phys. B 18 4536
[6] Xu C X, Sun X W, Chen B J 2004 Appl. Phys. Lett. 84 1540
[7] Xu C X, Sun X W 2004 J. Nanotechnology 1 452
[8] Wei A, Xu C X, Sun X W, Huang W, Lo G Q 2008 J. of Display Tech. 4 9
[9] Xu C X, Sun X W, Dong Z L, Zhu G P, Cui Y P 2007 Solid State Phenomena 121 813
[10] Xu C X, Sun X W, Zhu G P, Cui Y P 2006 App. Phys. Lett. 88 161921-1
[11] Yuan Y H, Hou X, Bai J T 2006 Acta Photonica Sin. 35 373 (in Chinese) [袁艳红、侯 洵、白晋涛 2009 光子学报 35 373]
[12] Yang Y F, Long H, Yang G, Zheng Q G, Li Y H, Lu P X 2009 Acta Phys. Sin. 58 2785 (in Chinese) [杨义发、龙 华、杨 光、郑启华、李玉华、陆培祥 2009 58 2785]
[13] Zuo C Y, Wen J, Bai Y L 2010 Chin. Phys. B 19 047101
[14] Zhang F C, Zhang Z Y, Zhang W H, Yan J F, Yong J N 2010 Chin. Phys. B 19 2508
[15] Paul E, Andrea L, Karsten A 2005 Phys. Review B 72 085213-1
[16] Monticone S, Tufeu R, Kanaev A V 1998 J. Phys. Chem. B 102 2854
[17] Lee C J, Lee T J, Lee S C, Lyu Y, Zhang H, Ruh H J 2002 Appl. Phys. Lett. 81 3648
[18] Fursey G N, Glazanov D V 1998 J. Vac. Sci. Tech. 16 910
[19] Xiao J, Bai X, Zhang G M 2008 Acta Phys. Sin. 57 7057 (in Chinese)[肖 竞、柏 鑫、张耿民 2008 57 7057]
[20] Wang Y J, Wang L D, Yang M, Liu G Q Yan C 2010 Acta Phys. Sin. 59 4950 (in Chinese ) [王益军、王六定、杨 敏、刘光清、严 诚 2010 59 4950]
[21] Chen J, Jin G J, Ma Y Q 2009 Acta Phys. Sin. 58 2707 (in Chinese) [陈 静、金国钧、马余强 2009 58 2707]
[22] Liu E K, Zhu B S, Luo J S 2003 Edition 6 (Beijing: Publishing House of Electronics Industry)110-138(in Chinese) [刘恩科、朱秉升、罗晋生 2003 第六版(北京:电子工业出版社)]
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