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The two-photon absorption coefficient spectra of indirect transitions in silicon have been measured using a picosecond Nd:YAG pulsed laser pumped optical parametric generator, whose wavelength being tunable. By employing the pulsed laser with the photon energy less than the indirect energy gap of silicon, the photovoltaic response between two electrons of the silicon photovoltaic diode has been detected significantly. The peak intensity of the pulsed photovoltaic response shows a quadratic dependence on the incident intensity. This suggests a typical two photon absorption process. A relationship between the pulsed photovoltaic response and the incident intensity has been established with an equivalent RC circuit model to derive the two-photon absorption coefficient, and the spectra can also be obtained by turning the incident wavelengths. The results show that when the incident photon energy change from 0.689 eV to 0.912 eV, the two-photon absorption coefficient increase form 0.42 cm/GW to 1.17 cm/GW. The mechanism for the two-photon absorption coefficient increasing with the incident photon energy can be attributed to the electrons excited from valance band finding an increasing availability of conduction-band states as the photon energy increase from Eig/2 to near Eig. This photon frequency dependence of the two-photon absorption coefficient has been fairly interpreted by the Dinu model.
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Keywords:
- two-photon absorption /
- pn junction /
- photovoltaic response /
- indirect transition
[1] Murayama M, Nakayama T 1994 Phys. Rev. B 49 5737
[2] Yang G, Chen Z H 2007 Acta Phys. Sin. 56 1182 (in Chinese) [杨 光、陈正豪 2007 56 1182]
[3] Zhu L, Yang W G, Xu L L, Chen A D, Wang W, Cui Y P 2007 Acta Phys. Sin. 56 569 (in Chinese) [朱 利、杨文革、徐玲玲、陈安定、王 文、崔一平 2007 56 569]
[4] Mizrahi V, Delong K W, Stegeman G I, Saifi M A, Anderjco M J 1989 Opt. Lett. 14 1140
[5] Yu B L, Pu H J, Wu X C, Zhang G L, Tang G Q, Chen W J, Zhu C S, Gan F X 1999 Acta Phys. Sin. 48 320 (in Chinese) [余保龙、卜宏建、吴小春、张桂兰、汤国庆、陈文驹、朱从善、干福熹 1999 48 320]
[6] Liu C H, Chen C Y, Ma B K 2002 Acta Phys. Sin. 51 2022 (in Chinese) [刘翠红、陈传誉、马本坤 2002 51 2022]
[7] Jiang J, Li N, Chen G B, Lu W, Wang M K, Yang X P, Wu G, Fan Y H, Li Y G, Yuan X Z 2003 Acta Phys. Sin. 52 1403 (in Chinese) [江 俊、李 宁、陈贵宾、陆 卫、王明凯、杨学平、吴 刚、范耀辉、李永贵、袁先漳 2003 52 1403]
[8] Tsang H K, Wong C S, Liang T K, Day I E, Roberts S W, Harpin A 2002 Appl. Phys. Lett. 80 416
[9] Rieger G W, Virk K S, Young J F 2004 Appl. Phys. Lett. 84 900
[10] Reitze D H, Zhang T R, Wood W M, Downer M C 1990 J. Opt. Soc. Am. B 7 84
[11] Folliot H, Lynch M, Bradley A L, Dunbar L A, Hegarty J, Donegan J F, Barry L P, Roberts J S, Hill G 2002 Appl. Phys. Lett. 80 1328
[12] Garcia H, Kalyanaraman R 2006 J. Phys. B: Mol. Opt. Phys. 39 2737
[13] Miragliotta J, Wickenden D K 1996 Appl. Phys. Lett. 69 2095
[14] Cui H Y, Li Z F, Liu Z L, Wang C, Chen X S, Hu X N, Ye Z H, Lu W 2008 Appl. Phys. Lett. 92 021128
[15] Cui H Y, Li Z F, Li Y J, Liu Z L, Chen X S, Lu W, Ye Z H, Hu X N, Wang C 2008 Acta Phys. Sin. 57 238 (in Chinese) [崔昊杨、李志锋、李亚军、刘昭麟、陈效双、陆 卫、叶振华、胡晓宁、王 茺 2008 57 238]
[16] Dinu M, Quochi F, Garcia H 2003 Appl. Phys. Lett. 82 2954
[17] Krishnamurthy S, Nashold K, Sher A 2000 Appl. Phys. Lett. 77 355
[18] Dinu M 2003 IEEE J. Quantum Electronics. 39 1498
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[1] Murayama M, Nakayama T 1994 Phys. Rev. B 49 5737
[2] Yang G, Chen Z H 2007 Acta Phys. Sin. 56 1182 (in Chinese) [杨 光、陈正豪 2007 56 1182]
[3] Zhu L, Yang W G, Xu L L, Chen A D, Wang W, Cui Y P 2007 Acta Phys. Sin. 56 569 (in Chinese) [朱 利、杨文革、徐玲玲、陈安定、王 文、崔一平 2007 56 569]
[4] Mizrahi V, Delong K W, Stegeman G I, Saifi M A, Anderjco M J 1989 Opt. Lett. 14 1140
[5] Yu B L, Pu H J, Wu X C, Zhang G L, Tang G Q, Chen W J, Zhu C S, Gan F X 1999 Acta Phys. Sin. 48 320 (in Chinese) [余保龙、卜宏建、吴小春、张桂兰、汤国庆、陈文驹、朱从善、干福熹 1999 48 320]
[6] Liu C H, Chen C Y, Ma B K 2002 Acta Phys. Sin. 51 2022 (in Chinese) [刘翠红、陈传誉、马本坤 2002 51 2022]
[7] Jiang J, Li N, Chen G B, Lu W, Wang M K, Yang X P, Wu G, Fan Y H, Li Y G, Yuan X Z 2003 Acta Phys. Sin. 52 1403 (in Chinese) [江 俊、李 宁、陈贵宾、陆 卫、王明凯、杨学平、吴 刚、范耀辉、李永贵、袁先漳 2003 52 1403]
[8] Tsang H K, Wong C S, Liang T K, Day I E, Roberts S W, Harpin A 2002 Appl. Phys. Lett. 80 416
[9] Rieger G W, Virk K S, Young J F 2004 Appl. Phys. Lett. 84 900
[10] Reitze D H, Zhang T R, Wood W M, Downer M C 1990 J. Opt. Soc. Am. B 7 84
[11] Folliot H, Lynch M, Bradley A L, Dunbar L A, Hegarty J, Donegan J F, Barry L P, Roberts J S, Hill G 2002 Appl. Phys. Lett. 80 1328
[12] Garcia H, Kalyanaraman R 2006 J. Phys. B: Mol. Opt. Phys. 39 2737
[13] Miragliotta J, Wickenden D K 1996 Appl. Phys. Lett. 69 2095
[14] Cui H Y, Li Z F, Liu Z L, Wang C, Chen X S, Hu X N, Ye Z H, Lu W 2008 Appl. Phys. Lett. 92 021128
[15] Cui H Y, Li Z F, Li Y J, Liu Z L, Chen X S, Lu W, Ye Z H, Hu X N, Wang C 2008 Acta Phys. Sin. 57 238 (in Chinese) [崔昊杨、李志锋、李亚军、刘昭麟、陈效双、陆 卫、叶振华、胡晓宁、王 茺 2008 57 238]
[16] Dinu M, Quochi F, Garcia H 2003 Appl. Phys. Lett. 82 2954
[17] Krishnamurthy S, Nashold K, Sher A 2000 Appl. Phys. Lett. 77 355
[18] Dinu M 2003 IEEE J. Quantum Electronics. 39 1498
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