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2023, 72(12): 126401.
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Guo Can, Zhao Yu-Ping, Deng Ying-Yuan, Zhang Zhong-Ming, Xu Chun-Jie. A phase-field study on interaction process of moving grain boundary and spinodal decomposition. Acta Physica Sinica,
2022, 71(7): 078101.
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Zhou Liang-Fu, Zhang Jing, He Wen-Hao, Wang Dong, Su Xue, Yang Dong-Yang, Li Yu-Hong. The nucleation and growth of Helium hubbles at grain boundaries of bcc tungsten: a molecular dynamics simulation. Acta Physica Sinica,
2020, 69(4): 046103.
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2019, 68(17): 170504.
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Zang Hang, Huang Zhi-Sheng, Li Tao, Guo Rong-Ming. Comparative study of irradiation swelling in monocrystalline and polycrystalline silicon carbide. Acta Physica Sinica,
2017, 66(6): 066104.
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2012, 61(24): 246202.
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2012, 61(19): 197703.
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He Jie, Chen Jun, Wang Xiao-Zhong, Lin Li-Bin. The first principles study on mechanical propertiesof He doped grain boundary of Al. Acta Physica Sinica,
2011, 60(7): 077104.
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Chen Xian-Miao, Song Shen-Hua. Non-equilibrium grain boundary segregation of phosphorous during high temperature plastic deformation. Acta Physica Sinica,
2009, 58(13): 183-S188.
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2008, 57(2): 1202-1206.
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Zhang Guo-Ying, Zhang Hui, Wei Dan, He Jun-Qi. Electronic theory studies of aluminum matrix composite reinforced by carbon nanotube. Acta Physica Sinica,
2007, 56(3): 1581-1584.
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2007, 56(3): 1707-1712.
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Yu Jian, Zhang Jin-Cang, Cao Gui-Xin, Wang Shi-Peng, Jing Chao, Cao Shi-Xun. Reentering spin glass behavior and charge ordering in phase separation Nd0.5Ca0.5MnO3 system. Acta Physica Sinica,
2006, 55(4): 1914-1920.
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Duan Ping, Chen Zheng-Hao, Dai Shou-Yu, Zhou Yue-Liang, Lü Hui-Bin. Colossal magnetoresistance effect in the perovskite-type La1－xPrxMnO3 thin films. Acta Physica Sinica,
2006, 55(3): 1441-1446.
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Tan Guo-Tai, Chen Zheng-Hao, Zhang Xiao-Zhong. Two magnetoresistance phenomena in perovskite manganite of La1－xTexMnO3(x=0.04, 0.1). Acta Physica Sinica,
2005, 54(1): 379-383.
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Zhu Zu-Song, Lin Xuan-Ying, Yu Yun-Peng, Lin Kui-Xun, Qiu Gui-Ming, Huang Rui, Yu Chu-Ying. The light-stability of polycrystalline silicon films deposited at low temperatures from SiCl4/H2 mixture. Acta Physica Sinica,
2005, 54(8): 3805-3809.
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2005, 54(6): 2843-2846.
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2004, 53(8): 2497-2502.
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2003, 52(8): 2061-2065.
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2000, 49(11): 2281-2286.
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