[1] |
Chen Lu, Li Ye-Fei, Zheng Qiao-Ling, Liu Qing-Kun, Gao Yi-Min, Li Bo, Zhou Chang-Meng. Theoretical study of atomic relaxation, surface energy, electronic structure and properties of B2- and B19'-NiTi surfaces. Acta Physica Sinica,
2019, 68(5): 053101.
doi: 10.7498/aps.68.20181944
|
[2] |
Teng Li-Hua, Mu Li-Jun. Effect of doping symmetry on electron spin relaxation dynamics in (110) GaAs/AlGaAs quantum wells. Acta Physica Sinica,
2017, 66(4): 046802.
doi: 10.7498/aps.66.046802
|
[3] |
Han Qing-Yao, Tang Jun-Chao, Zhang Chao, Wang Chuan, Ma Hai-Qiang, Yu Li, Jiao Rong-Zhen. The effects of local density of states on surface plasmon polaritons. Acta Physica Sinica,
2012, 61(13): 135202.
doi: 10.7498/aps.61.135202
|
[4] |
Li Wei, Wang Yong-Gang, Yang Bo-Jun. Effect of losses for squeezed surface plasmons. Acta Physica Sinica,
2011, 60(2): 024203.
doi: 10.7498/aps.60.024203
|
[5] |
Dou Wei-Dong, Huang Han, Zhang Han-Jie, Song Fei, Li Hai-Yang, He Pi-Mo, Bao Shi-Ning, Chen Qiao, Zhou Wu-Zong. Electronic and structural investigation of tetracene adsorbed on Ru(1010) surface. Acta Physica Sinica,
2007, 56(7): 4262-4269.
doi: 10.7498/aps.56.4262
|
[6] |
Li Jie, Dong Chen-Zhong, Xie Lu-You. Effects of relaxation induced by excitation (or ionization) of inner subshell electrons on the wave functions and transition probabilities. Acta Physica Sinica,
2006, 55(2): 655-660.
doi: 10.7498/aps.55.655
|
[7] |
Wang Yu-Yu, Zhao Yong-Tao, Xiao Guo-Qing, Fang Yan, Zhang Xiao-An, Wang Tie-Shan, Wang Shi-Wei, Peng Hai-Bo. Electron emission induced by the interaction of highly charged ions 207Pbq+(24≤q≤36) with solid surface of Si(110). Acta Physica Sinica,
2006, 55(2): 673-676.
doi: 10.7498/aps.55.673
|
[8] |
Mao Hong-Ying, Huang Han, Yan Xin-Cheng, Chen Qiao, Qian Hui-Qin, Zhang Jian-Hua, Li Hai-Yang, He Pi-Mo, Bao Shi-Ning. The structure and electronic state of the ordered thin film of perylene and tetracene on Ag(110) surface. Acta Physica Sinica,
2005, 54(1): 460-466.
doi: 10.7498/aps.54.460
|
[9] |
Zhang Yong-Fan, Ding Kai-Ning, Lin Wei, Li Jun-Qian. A first principle study on the geometry and the electronic structures of VC(001) relaxed surface. Acta Physica Sinica,
2005, 54(3): 1352-1360.
doi: 10.7498/aps.54.1352
|
[10] |
Huang Wei-Qing, Chen Ke-Qiu, Shuai Zhi-Gang, Wang Ling-Ling, Hu Wang-Yu. Magneto-coupling effect on surface electron states in a semi-infinite superlattice. Acta Physica Sinica,
2004, 53(7): 2330-2335.
doi: 10.7498/aps.53.2330
|
[11] |
YANG ZHI-AN, JIN TAO, YANG ZU-SHEN, QUI RE-XI, CUI MING-QI, LIU FENG-QIN. CHANGES OF SURFACE ELECTRON STATES OF InP UNDER SOFT X-RAYS IRRADIATION. Acta Physica Sinica,
1999, 48(6): 1113-1117.
doi: 10.7498/aps.48.1113
|
[12] |
XHEN SAN-GUO, JIA YU, MA BING-XIAN, FAN XI-QING. CALCULATION OF THE ATOMIC GEOMETRIES AND ELECTRONIC PROPERTIES OF ZnS (110) SURFACE. Acta Physica Sinica,
1998, 47(11): 1879-1884.
doi: 10.7498/aps.47.1879
|
[13] |
WANG SONG-YOU, JIA YU, ZHENG WEI-MIN, MA BING-XIAN, QIAN DONG-LIANG, ZHENG YU-XIANG, CHEN LIANG-YAO. ELECTRONIC STRUCTURE OF As ON InP(110) SURFACE STUDIED THEORETICALLY. Acta Physica Sinica,
1998, 47(10): 1695-1703.
doi: 10.7498/aps.47.1695
|
[14] |
WANG EN-GE. SURFACE RELAXATION AND ITS INFLUENCE ON THE-FERMI LEVEL PINNING OF Zn/GaAs(110). Acta Physica Sinica,
1997, 46(1): 117-122.
doi: 10.7498/aps.46.117
|
[15] |
JIA YU, FAN XI-QING, MA BING-XIAN. CALCULATION OF ELECTRONIC STATES OF THE CdTe(110) RELAXED SURFACE. Acta Physica Sinica,
1997, 46(10): 1999-2006.
doi: 10.7498/aps.46.1999
|
[16] |
YE LING. A THEORETICAL STUDY ON THE SURFACE ELECTRONIC STRUCTURES OF Si NANO-CLUSTERS. Acta Physica Sinica,
1996, 45(11): 1890-1897.
doi: 10.7498/aps.45.1890
|
[17] |
WANG XIANG-DONG, HU JI-HUANG, GE YU-QING, DAI DAO-XUAN. TOTAL CURRENT SPECTRA STUDIES ON ELECTRONIC STATES OF Si(100) SURFACE. Acta Physica Sinica,
1992, 41(6): 992-998.
doi: 10.7498/aps.41.992
|
[18] |
LAN TIAN, XU FIE-YUE. A STUDY OF IIIA-VA AND IIB-VIA COMPOUNDS AB(110)AND AB(1010) SURFACE RELAXATION WITH LOW-ENERGY-ELECTRON DIFFRACTION. Acta Physica Sinica,
1990, 39(7): 66-76.
doi: 10.7498/aps.39.66
|
[19] |
LAN TIAN, XU FEI-YUE. A STUDY OF GaAs(110) SURFACE RELAXATION WITH LOW-ENERGY-ELECTRON-DIFFRACTION. Acta Physica Sinica,
1989, 38(3): 357-365.
doi: 10.7498/aps.38.357
|
[20] |
XU YONG-NIAN, ZHANG KAI-MING. THE ATOMIC STRUCTURE AND ELECTRONIC STATES OF GaAs1-xPx (110). Acta Physica Sinica,
1983, 32(2): 247-250.
doi: 10.7498/aps.32.247
|