[1] |
Liu Qiang, Ni Yao, Liu Lu, Sun Lin, Liu Jia-Qi, Xu Wen-Tao. Artificial synapses based on layered multi-component metal oxides. Acta Physica Sinica,
2022, 71(14): 148501.
doi: 10.7498/aps.71.20220303
|
[2] |
Pei Ming-Hui, Tian Yu, Zhang Jin-Xing. Control of surface structures and functionalities in perovskite-type ferroelectric oxides and their potential applications. Acta Physica Sinica,
2020, 69(21): 217709.
doi: 10.7498/aps.69.20200884
|
[3] |
Zhang Ning, Xu Kai-Kai, Chen Yan-Xu, Zhu Kun-Feng, Zhao Jian-Ming, Yu Qi. Application prospect of metal-oxide-semiconductor silicon light emitting devices in integrated circuits. Acta Physica Sinica,
2019, 68(16): 167803.
doi: 10.7498/aps.68.20191004
|
[4] |
Zhao Yi-Han, Duan Bao-Xing, Yuan Song, Lü Jian-Mei, Mei Yang. Novel lateral double-diffused MOSFET with vertical assisted deplete-substrate layer. Acta Physica Sinica,
2017, 66(7): 077302.
doi: 10.7498/aps.66.077302
|
[5] |
Zhang Jing-Shui, Kong Ling-Qin, Dong Li-Quan, Liu Ming, Zuo Jian, Zhang Cun-Lin, Zhao Yue-Jin. Diffusion part in terahertz complementary metal oxide semiconductor transistor detector model. Acta Physica Sinica,
2017, 66(12): 127302.
doi: 10.7498/aps.66.127302
|
[6] |
Du Yong-Ping, Liu Hui-Mei, Wan Xian-Gang. Novel properties of 5d transition metal oxides. Acta Physica Sinica,
2015, 64(18): 187201.
doi: 10.7498/aps.64.187201
|
[7] |
Yang Shuai, Tang Xiao-Yan, Zhang Yu-Ming, Song Qing-Wen, Zhang Yi-Men. Influence of charge imbalance on breakdown voltage of 4H-SiC semi-superjunction VDMOSFET. Acta Physica Sinica,
2014, 63(20): 208501.
doi: 10.7498/aps.63.208501
|
[8] |
Wang Chun-Hua, Xu Hao, Wan Zhao, Hu Yan. A Colpitts chaotic oscillator based on metal oxide semiconductor transistors and its synchronizaiton research. Acta Physica Sinica,
2013, 62(20): 208401.
doi: 10.7498/aps.62.208401
|
[9] |
Xu Li-Jun, Zhang He-Ming. Drain-induced barrier-lowering effect in surrounding-gate schottky barrier metal-oxide semiconductor field transistor. Acta Physica Sinica,
2013, 62(10): 108502.
doi: 10.7498/aps.62.108502
|
[10] |
Qu Jiang-Tao, Wang Xiao-Yan, Zhang He-Ming, Wang Guan-Yu, Song Jian-Jun, Qin Shan-Shan. Drain-induced barrier-lowering effects on threshold voltage in short-channel strained Si metal-oxide semiconductor field transistor. Acta Physica Sinica,
2011, 60(2): 027102.
doi: 10.7498/aps.60.027102
|
[11] |
Yao Rui, Wang Fu-He, Zhou Yun-Song. Diffusion of oxygen atom near Zr(0001) surface. Acta Physica Sinica,
2009, 58(13): 177-S182.
doi: 10.7498/aps.58.177
|
[12] |
Liu Xiu-Xi, Wang Gong-Tang. Fabrication of high voltage thyristor based on silicon organic compounds and metal oxides type isolation protective material. Acta Physica Sinica,
2008, 57(1): 576-580.
doi: 10.7498/aps.57.576
|
[13] |
Li Jia-Yang, Li Rong-Wu, Sun Jun-Dong, Liu Shao-Jun. Computation of the Ehrlich-Schwoebel barrier to adatom diffusion in heteroepitaxial systems. Acta Physica Sinica,
2007, 56(1): 446-451.
doi: 10.7498/aps.56.446
|
[14] |
Zeng Zhong-Ming, Han Xiu-Feng, Du Guan-Xiang, Zhan Wen-Shan, Wang Yong, Zhang Ze. Magnetoresistance effect of double-barrier magnetic tunneling junction applied in spin transistors. Acta Physica Sinica,
2005, 54(7): 3351-3356.
doi: 10.7498/aps.54.3351
|
[15] |
LI Ya, Chen Ling-Yan, Zhang Zhe, Wu Yong-Gang, Qiao Yi, Xu Wei-Xin. . Acta Physica Sinica,
2001, 50(1): 79-82.
doi: 10.7498/aps.50.79
|
[16] |
WANG JIAN-PING, XU NA-JUN, ZHANG TING-QING, TANG HUA-LIAN, LIU JIA-LU, LIU CHUAN -YANG, YAO YU-JUAN, PENG HONG-LUN, HE BAO-PING, ZHANG ZHENG-XUAN. TEMPERATURE EFFECTS OF γ-IRRADIATED METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRAN SISTOR. Acta Physica Sinica,
2000, 49(7): 1331-1334.
doi: 10.7498/aps.49.1331
|
[17] |
XIAO DING-QUAN, WEI LI-FAN, LI ZI-SEN, ZHU JIAN-GUO, QIAN ZHENG-HONG, PENG WEN-BIN. MODELLING OF MULTI-ION-BEAM REACTIVE COSPUTTERING OF METAL OXIDE THIN FILMS (Ⅱ)——NUMERICAL CALCULATION AND RESULTS DISCUSSION. Acta Physica Sinica,
1996, 45(2): 345-352.
doi: 10.7498/aps.45.345
|
[18] |
KANG JIN-FENG, CHEN XIN, WANG YOU-XIANG, HAN RU-QI, XIONG GUANG-CHENG, LIAN GUI-JUN, LI JIE, WU SI-CHENG. DIFFERENT INTERDIFFUSION CHARACTERISTICS BETWEEN Ag AND Al/YBa_2Cu_3O_(7-x) CONTACT INTERFACE. Acta Physica Sinica,
1995, 44(11): 1831-1838.
doi: 10.7498/aps.44.1831
|
[19] |
WANG XIE-WEN, WU SI-CHENG. XPS STUDY OF THE OXIDES ON THE SURFACE OF NbN THIN FILM. Acta Physica Sinica,
1985, 34(1): 112-116.
doi: 10.7498/aps.34.112
|
[20] |
. ДИФФУЗИЯ ФОСФОРА В ОКИСНОМ СЛОЕ НА ПОВЕРХНОСТИ КРЕМНИЯ. Acta Physica Sinica,
1965, 21(3): 496-502.
doi: 10.7498/aps.21.496
|