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Huang Hao, Zhang Kan, Wu Ming, Li Hu, Wang Min-Juan, Zhang Shu-Ming, Chen Jian-Hong, Wen Mao. Comparison between axial residual stresses measured by Raman spectroscopy and X-ray diffraction in SiC fiber reinforced titanium matrix composite. Acta Physica Sinica,
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Cui Jian-Jun, Gao Si-Tian. Nanometer film thickness metrology and traceability based on grazing incidence X-ray reflectometry. Acta Physica Sinica,
2014, 63(6): 060601.
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Li Jia, Fang Qi, Luo Bing-Chi, Zhou Min-Jie, Li Kai, Wu Wei-Dong. Residual stress analysis by grazing-incidence X-ray diffraction on beryllium films. Acta Physica Sinica,
2013, 62(14): 140701.
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Zhou Bing-Qing, Liu Feng-Zhen, Zhu Mei-Fang, Zhou Yu-Qin, Wu Zhong-Hua, Chen Xing. Studies on surface roughness and growth mechanisms of microcrystalline silicon films by grazing incidence X-ray reflectivity. Acta Physica Sinica,
2007, 56(4): 2422-2427.
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2005, 54(6): 2814-2820.
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Zhao Hui, Guo Mei-Fang, Dong Bao-Zhong. Determination of the transition-layer thickness of a crystalline polymer by using small-angle x-ray scattering. Acta Physica Sinica,
2004, 53(4): 1247-1250.
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2004, 53(4): 1099-1104.
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Xu Yao, Li Zhi-Hong, Fan Wen-Hao, Wu Dong, Sun Yu-Han, Wang Jun, Dong Bao-Zhong. Two fractal structures of methyl-modified Silica gels by SAXS. Acta Physica Sinica,
2003, 52(2): 442-447.
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LI ZHI-HONG, GONG YAN-JUN, WU DONG, SUN YU-HAN, WANG JUN, LIU YI, DONG BAO-ZHONG. DETERMINATION OF THE AVERAGE THICKNESS OF INTERFACE LAYER WRAPPED ABOUT SiO2 SOLS BY SAXS. Acta Physica Sinica,
2001, 50(6): 1128-1131.
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2000, 49(4): 775-780.
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1998, 47(9): 1520-1528.
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1985, 34(11): 1461-1468.
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CHENG JIAN-BANG, CHENG WAN-RONG, WANG XI-HONG, HAO GONG-ZHANG, WU ZHANG-CUN. NON-DESTRUCTIVE DETERMINATION OF COMPOSITION AND THICKNESS OF MULTI-COMPONENT ALLOY THIN FILMS BY X-RAY FLUORESCENCE SPECTROSCOPIC METHOD. Acta Physica Sinica,
1983, 32(2): 251-255.
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1981, 30(10): 1361-1368.
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1981, 30(10): 1351-1360.
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1980, 29(12): 1640-1644.
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1980, 29(2): 247-251.
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1980, 29(1): 35-45.
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SHAW NAN, LIU YI-HUAN. X-RAY MEASUREMENT OF THE THERMAL EXPANSION OF GERMANIUM, SILICON, INDIUM ANTIMONIDE AND GALLIUM ARSENIDE. Acta Physica Sinica,
1964, 20(8): 699-704.
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