基于X射线掠射法的纳米薄膜厚度计量与量值溯源研究

崔建军; 高思田

doi:10.7498/aps.63.060601

摘要

为了实现纳米薄膜厚度的高精度计量，研制了可供台阶仪、扫描探针显微镜等接触测量的纳米薄膜样片，研究了X 射线掠射法测量该纳米薄膜样片厚度的基本原理和计算方法，导出了基于Kiessig厚度干涉条纹计算膜层厚度的线性拟合公式，并提出了一种可溯源至单晶硅原子晶格间距和角度计量标准的纳米膜厚量值溯源方法，同时给出了相应的不确定度评定方法. 实验证明：该纳米薄膜厚度H测量相对扩展不确定度达到U=0.3 nm+1.5%H，包含因子k=2. 从而建立了一套纳米薄膜厚度计量方法和溯源体系.

关键词:

Abstract

To realize metrology of the nanometer thin film thickness with high accuracy, a series of the nanometer film thickness standard samples with single layer is developed which could be measured by contact instruments such as stylus contact surface step profiler and scanning probe microscopy. The measurement and calculation method of grazing incidence X-ray reflectometry (GIXRR) for film thickness are studied. The formula of linear fitting method based on the periodic Kiessig fringes for thickness measurement is presented. A tracing approach of film thickness measurement, which is traceable to the atomic lattice of monocrystalline silicon and national angle standard, is proposed, and a new optics calibration method is presented which can measure angular misalignment of GIXRR apparatus. The relative expanded uncertainty of the nanofilm thickness H measurement is U=0.3 nm+1.5%H with coverage factor k=2.

Keywords:

作者及机构信息

崔建军^1,2,
高思田²

1.
精密测试技术及仪器国家重点实验室(天津大学), 天津 300072;

2.
中国计量科学研究院, 北京 100013

基金项目: 国家自然科学基金重点项目（批准号：91023021）、中国计量科学研究院项目（批准号：AKY0703）及（批准号：24-JB1104）、浙江省重中之重学科基金和浙江理工大学机械设计及理论重点实验室开放基金（批准号：ZSTUMD2012A005）资助的课题.

Authors and contacts

Cui Jian-Jun^1,2,
Gao Si-Tian²

1.
State Key Laboratory of Precision Measuring Technology and Instruments (Tianjin University), Tianjin 300072, China;

2.
National Institute of Metrology, Beijing 100013, China

Funds: Project supported by the Key Program of the National Natural Science Foundation of China (Grant No. 91023021), the Foundation of National Metrology Institute of China (Grant Nos. AKY0703, 24-JB1104), the Open Foundation of Zhejiang Provincial Top Key Academic Discipline of Mechanical Design and Theory and Zhejiang Sci.-Tech. University Key Laboratory, China (Grant No. ZSTUMD2012A005).

参考文献

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[25]	Zhang J T, Li Y, Luo Z Y, Wu X J 2012 Chin. Phys. B 21 010701
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[34]	Vaudin M D, Kessler E G, Owen D 2011 Metrologia 48 201
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[37]	Krumrey M, Gleber G, Scholze F, Wernecke J 2011 Meas. Sci. Technol. 22 094032

施引文献

[1]	Jiang Z D, Wang C Y, Yang S M 2013 Engineer. Science. 15 15 (in Chinese) [蒋庄德, 王琛英, 杨树明 2013 中国工程科学 15 15]
[2]	Kamineni V K, Diebold A C 2011 AIP Confer. Proceed. 1395 33
[3]	Mai Z H 2007 X-Ray Characterization of Thin Film Structure (Beijing: Science Press) p62 (in Chinese) [麦振洪 2007 薄膜结构X射线表征 (北京: 科学出版社) 第62 页]
[4]	Seah M, Chiffre L 2006 Handbook of Materials Measurement Methods (Berlin Heidelberg: Springer-Verlag) p229
[5]	Wu B, Hu M, Hou S B, L Z J, Gao W, Liang J R 2012 Acta Phys. Sin. 61 188101 (in Chinese) [武斌, 胡明, 后顺保, 吕志军, 高旺, 梁继然 2012 61 188101]
[6]	Huang Y, Ye H A, Li Q S, Dou Y F 2013 Chin. Phys. B 22 027301
[7]	Imamura M, Matsubayashi N, Fan J, Kojima I, Sasaki M 2011 Meas. Sci. Technol. 22 024007
[8]	Gao S T, Du H, Lu M Z, Cui J J, Shi Y 2009 J. Nanosci. Nanotech. 9 692
[9]	Su H C, Lee C H, Lin M Z, Huang T W 2012 Chin. J. Phys. 50 291
[10]	Diebold A C 2013 J. Vacuum Sci. Technol. A: Vacuum, Surfaces, and Films 31 050804
[11]	Fuertes M C, Barrera M P, Plá J 2012 Thin Solid Films 520 4853
[12]	Nolot E, André A 2011 Thin Solid Films 519 2782
[13]	Stoev K N, Sakurai K 1999 Spectrochimica Acta B: Atomic Spectroscopy 54 41
[14]	Colombi P, Agnihotri D K, Asadchikov V E, Bontempi E, Bowen D K, Chang C, Depero L E, Farnworth M, Fujimoto T, Gibaud A 2008 J. Appl. Crystallogr. 41 143
[15]	Kim K J 2011 J. Surface Anal. 17 177
[16]	Vaudin M D, Kessler E G, Owen D M 2011 Metrologia 48 201
[17]	Misumi I, Lu M, Tanaka H, Sugawara K, Gonda S, Kurosawa T 2008 Meas. Sci. Technol. 19 45101
[18]	Paz V F, Emons M, Obata K, Ovsianikov A, Peterhänsel S, Frenner K, Osten W 2012 J. Laser Appl. 24 042004
[19]	Matyi R J, Depero L E, Bontempi E, Colombi P, Gibaud A, Jergel M, Krumrey M, Lafford T A, Lamperti A, Meduna M, Vander L A, Wiemer C 2008 Thin Solid Films 516 7962
[20]	Fewster P F 2013 X-ray Scattering from Semiconductors and Other Materials (Singapore: World Scientific Publishing Company) p170
[21]	Chen C C, Liu L Y, Wang R Z, Song X M, Wang B, Yan H 2013 Acta Phys. Sin. 62 177701 (in Chinese) [陈程程, 刘立英, 王如志, 宋雪梅, 王波, 严辉 2013 62 177701]
[22]	Zhang J T, Li Y, Luo Z Y 2010 Acta Phys. Sin. 59 186 (in Chinese) [张继涛, 李岩, 罗志勇 2010 59 186]
[23]	Zhang J T 2010 Ph. D. Dissertation (Beijing: Tsinghua University) (in Chinese) [张继涛 2010 博士学位论文 (北京: 清华大学)]
[24]	Zhang J T, Li Y, Luo Z Y, Wu X J 2010 Chin. Phys. Lett. 27 050601
[25]	Zhang J T, Li Y, Luo Z Y, Wu X J 2012 Chin. Phys. B 21 010701
[26]	Zhang J, Li Y, Wu X, Luo Z, Wei, H 2010 Opt. Express 18 7331
[27]	Chen K, Cui M Q, Zheng L, Zhao Y D 2008 High Power Laser and Particle Beams 20 234 (in Chinese) [陈凯, 崔明启, 郑雷, 赵屹东 2008 强激光与粒子束 20 234]
[28]	Durand O, Morizet N 2006 Appl. Surface Sci. 253 133
[29]	Serafińczuk J, Pietrucha J, Schroeder G, Gotszalk T P 2011 Opt. Appl. 41 315
[30]	Cao J, Yanagihara M, Yamamoto M, Goto Y, Namioka T 1994 Appl. Opt. 33 2013
[31]	Bowen D K, Tanner B K 1993 Nanotechnology 4 175
[32]	Zhu H L, Jin C S, Zhang L C 2008 Anal. Instrument 1 14 (in Chinese) [朱洪力, 金春水, 张立超 2008 分析仪器 1 14]
[33]	Massa E, Mana G, Kuetgens U, Ferroglio L 2011 Metrologia 48 S37
[34]	Vaudin M D, Kessler E G, Owen D 2011 Metrologia 48 201
[35]	Windover D, Gil D L, Henins A, Cline J P 2009 AIP Confer. Proceed. 1173 50
[36]	Schmidbauer M, Kwasniewski A, Schwarzkopf J 2012 Acta Crystallographica B: Struct. Sci. 68 8
[37]	Krumrey M, Gleber G, Scholze F, Wernecke J 2011 Meas. Sci. Technol. 22 094032

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