| [1] |
Qin Xi-Feng, Ma Gui-Jie, Shi Shu-Hua, Wang Feng-Xiang, Fu Gang, Zhao Jin-Hua. Investigation on range distribution of Er ions implanted in silicon-on-insulator. Acta Physica Sinica,
2014, 63(17): 176101.
doi: 10.7498/aps.63.176101
|
| [2] |
Wang Chong, Yang Yu, Yang Rui-Dong, Li Liang, Wei Dong, Jin Ying-Xia, Bao Ji-Ming. Manipulations of properties of the W-line emitting from the Si+ Self-ion-implanted Si thin films on insulated oxide layer. Acta Physica Sinica,
2011, 60(10): 106104.
doi: 10.7498/aps.60.106104
|
| [3] |
Zhang Da-Cheng, Shen Yan-Yan, Huang Yuan-Jie, Wang Zhuo, Liu Chang-Long. Theoretical study of nanoparticles in insulators fabricated by metal ion implantation. Acta Physica Sinica,
2010, 59(11): 7974-7978.
doi: 10.7498/aps.59.7974
|
| [4] |
Miao Jing-Wei, Wang Pei-Lu, Zhu Zhou-Sen, Yuan Xue-Dong, Wang Hu, Yang Chao-Wen, Shi Mian-Gong, Miao Lei, Sun Wei-Li, Zhang Jing, Liao Xue-Hua. Photoluminescence spectrum of monocrystalline Si implanted by nitrogen cluster ions. Acta Physica Sinica,
2008, 57(4): 2174-2178.
doi: 10.7498/aps.57.2174
|
| [5] |
Yang Jian-Song, Li Bao-Xing. Study of the stability of gallium-arsenic ion clusters. Acta Physica Sinica,
2006, 55(12): 6562-6569.
doi: 10.7498/aps.55.6562
|
| [6] |
Xu Yue-Sheng, Yang Xin-Rong, Wang Hai-Yun, Tang Lei, Liu Cai-Chi, Wei Xin, Qin Dao-Zhi. Micro-distribution of carbon in semi-insulating gallium arsenide. Acta Physica Sinica,
2005, 54(4): 1904-1908.
doi: 10.7498/aps.54.1904
|
| [7] |
Xu Yue-Sheng, Tang Lei, Wang Hai-Yun, Liu Cai-Chi, Hao Jing-Chen. Study on the cell structure in semi-insulation gallium arsenide. Acta Physica Sinica,
2004, 53(2): 651-655.
doi: 10.7498/aps.53.651
|
| [8] |
QIU SU-JUAN, CHEN KAI-MAO, WU LAN-QING. DEEP LEVELS IN Si-IMPLANTED SEMI-INSULATOR GALLIUM ARSENIDE. Acta Physica Sinica,
1993, 42(8): 1304-1310.
doi: 10.7498/aps.42.1304
|
| [9] |
LI XIAO-LEI, LU FANG, SUN HENG-HUI, HUANG QING-HONG. STUDY OF DEFECTS IN LOW-DOSE P+ IMPLANTED AND RAPID THERMAL ANNEALED SILICON. Acta Physica Sinica,
1992, 41(6): 985-991.
doi: 10.7498/aps.41.985
|
| [10] |
SHEN HONG-LIE, YANG GEN-QING, ZHOU ZU-YAO, ZOU SHI-CHANG. INVESTIGATION OF AMPHOTERIC BEHAVIOR OF SILICON IMPLANTED INTO InP. Acta Physica Sinica,
1991, 40(3): 476-482.
doi: 10.7498/aps.40.476
|
| [11] |
MA HAI-MING, LI FU-MING. SELF-TRANSMISSION OF PICOSECOND LIGHT PULSES IN GaAs. Acta Physica Sinica,
1989, 38(9): 1530-1533.
doi: 10.7498/aps.38.1530
|
| [12] |
CHENG ZHAO-NIAN, WANG WEI-YUAN. ELECTRONIC STOPPING POWER OF B+ IMPLANTATION IN GaAs. Acta Physica Sinica,
1985, 34(7): 968-972.
doi: 10.7498/aps.34.968
|
| [13] |
WANG WEI-YUAN, XIA GUAN-QUN, LU JIAN-GUO, SHAO YONG-FU, QIAO YONG. CARRIER PROFILE TAIL IN SILICON IMPLANTED Cr-DOPED SEMI-INSULATING GaAs SUBSTRATE. Acta Physica Sinica,
1985, 34(3): 402-407.
doi: 10.7498/aps.34.402
|
| [14] |
QIAN YOU-HUA, CHEN LIANG-YAO. ELECTROLYTE ELECTROREFLECTANCE (EER) SPECTROSCOPY OF ION IMPLANTED SILICON LAYER. Acta Physica Sinica,
1982, 31(5): 646-653.
doi: 10.7498/aps.31.646
|
| [15] |
CHENG ZHAO-NIAN, ZHU WEN-YU, WANG WEI-YUAN. CALCULATION OF RANGE STATISTIC PARAMETERS FOR IONS IMPLANTED IN GaAs. Acta Physica Sinica,
1982, 31(7): 922-931.
doi: 10.7498/aps.31.922
|
| [16] |
MO DANG, YE XIAN-JING. ELLIPSOMETRIC SPECTRUM AND OPTICAL PROPERTIES OF ION IMPLANTED SILICON. Acta Physica Sinica,
1981, 30(10): 1287-1294.
doi: 10.7498/aps.30.1287
|
| [17] |
MO DANG, LU YIN-CHENG, LI DAN-HUI, LIU SHANG-HE, LU WU-XING. ELLIPSOMETRIC STUDY OF DAMAGE AND ANNEALING IN ARSENIC ION IMPLANTED SILICON. Acta Physica Sinica,
1980, 29(9): 1214-1216.
doi: 10.7498/aps.29.1214
|
| [18] |
ZHOU BING-LIN, WANG LE, SHAO YONG-FU, CHEN QI-YU. MEASUREMENT OF DEEP LEVEL TRAPS IN GaAs. Acta Physica Sinica,
1979, 28(3): 350-357.
doi: 10.7498/aps.28.350
|
| [19] |
WANG WEI-YUAN, XU JING-YANG, NI QI-MIN, TAN RU-HUAN, LIU YUE-QIN, QIU YUE-YING. A STUDY OF PROTON IMPLANTATION FOR GaAs. Acta Physica Sinica,
1979, 28(5): 86-95.
doi: 10.7498/aps.28.86
|
| [20] |
SHAW NAN, LIU YI-HUAN. X-RAY MEASUREMENT OF THE THERMAL EXPANSION OF GERMANIUM, SILICON, INDIUM ANTIMONIDE AND GALLIUM ARSENIDE. Acta Physica Sinica,
1964, 20(8): 699-704.
doi: 10.7498/aps.20.699
|
下载:
