In掺杂对磁性半导体Li1.05(Zn0.925, Mn0.075)As中铁磁序的调控

谢玲凤; 董金瓯; 赵雪芹; 杨巧林; 宁凡龙

doi:10.7498/aps.73.20231949

摘要

磁性半导体中磁矩受载流子调控形成有序态, 但其机制尚存在着争议. 本文利用高温固相反应法, 通过(Zn²⁺, In³⁺)替换, 即In³⁺占据Zn²⁺的晶格位置, 在p型块状磁性半导体Li_1.05(Zn_0.925, Mn_0.075)As中引入n型载流子, 成功合成了一系列Li_1.05(Zn_0.925–y, Mn_0.075, In_y)As (y = 0, 0.05, 0.075, 0.1)新材料. 在保持Mn掺杂浓度为7.5%不变时, 仍可在所有In掺杂的样品中观察到铁磁转变. 随着In掺杂浓度的增大, 其居里温度被不断压制. 样品的电阻率随着In掺杂浓度的增大而逐渐增大. 实验结果表明, 随着In的掺杂, Li_1.05(Zn_0.925, Mn_0.075)As中原有的p型载流子被部分抵消, 导致总载流子浓度降低, 反映了n型载流子对Li_1.05(Zn_0.925, Mn_0.075)As中铁磁序的压制作用, 同时也验证了载流子对磁性半导体中铁磁序的重要影响.

关键词:

Abstract

Magnetic semiconductors (MSs) that can manipulate both spin degree of freedom and charge degree of freedom have become an important research field in semiconductor spintronics. In recent years, a new series of bulk form MSs, which are iso-structure to the iron-based superconductors were reported. In these new materials, spins and carriers are separately introduced, and can be precisely manipulated. Li(Zn, Mn)As with T_C ~50 K is the first bulk MS with spins and charges separated. The Li(Zn, Mn)As has p-type carriers, which is in contradiction with the theoretical calculation results by Mašek et al., who claimed that doping extra Li will induce n-type carriers. So, it is necessary to study the formation reason of hole carriers in Li(Zn, Mn)As and their effect on ferromagnetic ordering. In this work, a series of Li_1.05(Zn_0.925–y, Mn_0.075, In_y)As (y = 0, 0.05, 0.075, 0.1) new materials are successfully synthesized by introducing n-type carriers into the p-type bulk MS Li_1.05(Zn_0.925, Mn_0.075)As through (Zn²⁺, In³⁺) substitution. Magnetization measurements reveal that all the samples still maintain a ferromagnetic transition signal similar to MS Li_1.05(Zn_0.925, Mn_0.075)As, and the Curie temperature T_C is obviously suppressed with the increase of In-doping concentration. Clear hysteresis loops demonstrate the ferromagnetic ordering state. The resistivity increases gradually with the increase of In-doping concentration. Our results show that the (Zn²⁺, In³⁺) substitution successfully introduces n-type carriers into Li_1.05(Zn_0.925, Mn_0.075)As, and the original p-type carriers in Li_1.05(Zn_0.925, Mn_0.075)As, which are partial neutralized, resulting in the decrease of p-type carrier concentrations, which obviously suppresses the ferromagnetic ordering of Li(Zn, Mn)As. It reflects the important roles played by carriers in forming ferromagnetic ordering in MS materials. The fabrication of Li_1.05(Zn_0.925–y, Mn_0.075, In_y)As material gives us a better understanding of the mechanism of ferromagnetic ordering in Li(Zn, Mn)As, and these results will be helpful in searching for more novel magnetic semiconductor materials.

Keywords:

作者及机构信息

1.
浙江大学物理学院, 浙江省量子技术与器件重点实验室, 杭州　310058

2.
南京大学, 人工微结构科学与技术协同创新中心, 南京　210093

3.
浙江大学, 硅及先进半导体材料全国重点实验室, 杭州　310058

4.
赤峰高新技术产业开发区, 科技创新中心, 赤峰　025250

通信作者: 宁凡龙, ningfl@zju.edu.cn

基金项目: 国家重点研究发展计划(批准号: 2022YFA1402701, 2022YFA1403202)、国家自然科学基金(批准号: 12074333)和浙江省重点研发计划(批准号: 2021C01002)资助的课题.

Authors and contacts

1.
Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, Zhejiang University, Hangzhou 310058, China

2.
Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China

3.
State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310058, China

4.
Science and Technology Innovation Center, Chifeng High-Tech Industrial Development Zone, Chifeng 025250, China

Corresponding author: Ning Fan-Long, ningfl@zju.edu.cn

Funds: Project supported by the National Key Research and Development Program of China (Grant Nos. 2022YFA1402701, 2022YFA1403202), the National Natural Science Foundation of China (Grant No. 12074333), and the Key Research and Development Program of Zhejiang Province, China (Grant No. 2021C01002) .

文章全文 : translate this paragraph

参考文献

[1]	Žutić I, Fabian J, Sarma S D 2004 Rev. Mod. Phys. 76 323 Google Scholar
[2]	Dietl T, Ohno H 2014 Rev. Mod. Phys. 86 187 Google Scholar
[3]	Ohno H, Shen N A, Matsukura F, Oiwa A, Endo A, Katsumoto S, Iye Y 1996 Appl. Phys. Lett. 69 363 Google Scholar
[4]	Dietl T 2010 Nat. Mater. 9 965 Google Scholar
[5]	Chen L, Yang X, Yang F, Zhao J, Misuraca J, Xiong P, von Molnár S 2011 Nano Lett. 11 2584 Google Scholar
[6]	Ding C, Qin C, Man H, Imai T, Ning F 2013 Phys. Rev. B 88 041108 Google Scholar
[7]	Gu Y, Guo S L, Ning F L 2019 J. Semicond. 40 081506 Google Scholar
[8]	Guo S L, Ning F L 2018 Chin. Phys. B 27 097502 Google Scholar
[9]	Dietl T, Bonanni A, Ohno H 2019 J. Semicond. 40 080301 Google Scholar
[10]	邓正, 赵国强, 靳常青 2019 68 167502 Google Scholar Deng Z, Zhao G Q, Jin C Q 2019 Acta Phys. Sin. 68 167502 Google Scholar
[11]	Zhao G Q, Deng Z, Jin C Q 2019 J. Semicond. 40 081505 Google Scholar
[12]	Deng Z, Jin C Q, Liu Q, Wang X, Zhu J, Feng S, Chen L, Yu R, Arguello C, Goko T, Ning F, Zhang J, Wang Y, Aczel A, Munsie T, Williams T, Luke G, Kakeshita T, Uchida S, Higemoto W, Ito T, Gu Bo, Maekawa S, Morris G, Uemura Y 2011 Nat. Commun. 2 422 Google Scholar
[13]	Ding C, Man H, Qin C, Lu J, Sun Y, Wang Q, Yu B, Feng C, Goko T, Arguello C, Ning F 2013 Phys. Rev. B 88 041102 Google Scholar
[14]	Zhao K, Deng Z, Wang X, et al. 2013 Nat. Commun. 4 1442 Google Scholar
[15]	Zhao K, Chen B, Zhao G Q, Yuan Z, Liu Q, Deng Z, Zhu J, Jin C Q 2014 Chin. Sci. Bull. 59 2524 Google Scholar
[16]	Wang X, Liu Q, Lv Y, Gao W, Yang L, Yu R, Li F, Jin C Q 2008 Solid State Commun. 148 538 Google Scholar
[17]	Kamihara Y, Watanabe T, Hirano M, Hosono H 2008 J. Am. Chem. Soc. 130 3296 Google Scholar
[18]	Rotter M, Tegel M, Johrendt D 2008 Phys. Rev. Lett. 101 107006 Google Scholar
[19]	Zhao X, Dong J, Fu L, Gu Y, Zhang R, Yang Q, Xie L, Tang Y, Ning F 2022 J. Semicond. 43 112501 Google Scholar
[20]	Dong J, Zhao X, Fu L, Gu Y, Zhang R, Yang Q, Xie L, Ning F 2022 J. Semicond. 43 072501 Google Scholar
[21]	Yu S, Peng Y, Zhao G Q, Zhao J F, Wang X C, Zhang J, Deng Z, Jin C Q 2023 J. Semicond. 44 032501 Google Scholar
[22]	Kuriyama K, Nakamura F 1987 Phys. Rev. B 36 4439 Google Scholar
[23]	Kuriyama K, Kato T, Kawada K 1994 Phys. Rev. B 49 11452 Google Scholar
[24]	Wei S, Zunger A 1986 Phys. Rev. Lett. 56 528 Google Scholar
[25]	Mašek J, Kudrnovský J, Máca F, et al. 2007 Phys. Rev. Lett. 98 067202 Google Scholar
[26]	Toby B H, Von Dreele R B 2013 J. Appl. Crystallogr. 46 544 Google Scholar
[27]	Ding C, Gong X, Man H, Zhi G, Guo S, Zhao Y, Wang H, Chen B, Ning F 2014 Europhys. Lett. 107 17004 Google Scholar

施引文献

图 1 (a) Li_1.05(Zn_0.925–y, Mn_0.075, In_y)As (y = 0, 0.05, 0.075, 0.1)的X射线衍射图; (b) Li_1.05(Zn_0.875, Mn_0.075, In_0.05)As的Rietveld 精修结果; (c) Li_1.05(Zn_0.925–y, Mn_0.075, In_y)As (y = 0, 0.05, 0.075, 0.1)的晶格常数a

Fig. 1. (a) The X-ray diffraction patterns for Li_1.05(Zn_0.925, Mn_0.075, In_y)As (y = 0, 0.05, 0.075, 0.1); (b) the Rietveld refinement of Li_1.05(Zn_0.87, Mn_0.075, In_0.05)As; (c) the lattice parameter of Li_1.05(Zn_0.925–y, Mn_0.075, In_y)As (y = 0, 0.05, 0.075, 0.1).

下载: 全尺寸图片幻灯片

图 2 (a) Li_1.05(Zn_0.925–y, Mn_0.075, In_y)As (y = 0, 0.05, 0.075, 0.1)在100 Oe外场下的场冷及零场冷磁化强度曲线, 插图为y = 0.05, 0.075, 0.1的样品在2—25 K的磁化强度曲线; (b) Li_1.05(Zn_0.925–y, Mn_0.075, In_y)As (y = 0, 0.05, 0.075, 0.1)在温度为2 K下的等温磁化强度曲线, 插图为–200—200 Oe的局部放大图; (c) Li_1.05(Zn_0.925–y, Mn_0.075, In_y)As (y = 0, 0.05, 0.075, 0.1)的磁化强度对温度的一阶导数与温度的关系 (dM/dT-T), 箭头标注为 T_diff; (d) Li_1.05(Zn_0.925–y, Mn_0.075, In_y)As (y = 0, 0.05, 0.075, 0.1)的1/(χ–χ₀)线性拟合结果, 箭头标注为外斯温度θ

Fig. 2. (a) The temperature dependence magnetization for Li_1.05(Zn_0.925–y, Mn_0.075, In_y)As (y = 0, 0.05, 0.075, 0.1) in zero-field cooling (ZFC) and field cooling (FC) conditions with an applied external field of 100 Oe, inset shows the temperature dependence magnetization for y = 0.05, 0.075, 0.1 samples from 2 K to 25 K; (b) the iso-thermal magnetization for Li_1.05(Zn_0.925–y, Mn_0.075, In_y)As (y = 0, 0.05, 0.075, 0.1) at 2 K, inset shows the partial enlarged curves with temperature from –200 Oe to 200 Oe; (c) the dM/dT versus T curves for Li_1.05(Zn_0.925–y, Mn_0.075, In_y)As (y = 0, 0.05, 0.075, 0.1), the arrow marked T_diff; (d) the linear fitting results of 1/(χ–χ₀) versus T for Li_1.05(Zn_0.925–y, Mn_0.075, In_y)As (y = 0, 0.05, 0.075, 0.1), the arrow marked the weiss temperature θ.

下载: 全尺寸图片幻灯片

图 3 (a) Li_1.05(Zn_0.925–y, Mn_0.075, In_y)As (y = 0, 0.05, 0.075, 0.1)电阻率随温度变化的关系; (b) Li_1.05(Zn_0.825, Mn_0.075, In_0.1)As在室温附近的lnρ - 1000/T的实验数据和激发能拟合曲线

Fig. 3. (a) Temperature dependence of Li_1.05(Zn_0.925–y, Mn_0.075, In_y)As (y = 0, 0.05, 0.075, 0.1) resistance; (b) experimental data and activation energy fitting curves of lnρ - 1000/T for Li_1.05(Zn_0.925–y, Mn_0.075, In_y)As near room temperature.

下载: 全尺寸图片幻灯片

表 1 Li_1.05(Zn_0.925–y, Mn_0.075, In_y)As (y = 0, 0.05, 0.075, 0.1)的外斯温度θ、T_diff、有效磁矩µ_eff、矫顽力H_C

Table 1. The Weiss temperature θ, T_diff, the effective moment µ_eff and the coercive field H_C of Li_1.05(Zn_0.925–y, Mn_0.075, In_y)As (y = 0, 0.05, 0.075, 0.1).

y θ/K T_diff/K µ_eff /(μ_B/Mn) H_C/Oe

0 28.4 20 3.9 5
0.05 13.9 4.5 2.6 150
0.075 5.3 4.5 3.6 35
0.1 4.9 4 3.4 30

下载: 导出CSV

map

[1]	Žutić I, Fabian J, Sarma S D 2004 Rev. Mod. Phys. 76 323 Google Scholar
[2]	Dietl T, Ohno H 2014 Rev. Mod. Phys. 86 187 Google Scholar
[3]	Ohno H, Shen N A, Matsukura F, Oiwa A, Endo A, Katsumoto S, Iye Y 1996 Appl. Phys. Lett. 69 363 Google Scholar
[4]	Dietl T 2010 Nat. Mater. 9 965 Google Scholar
[5]	Chen L, Yang X, Yang F, Zhao J, Misuraca J, Xiong P, von Molnár S 2011 Nano Lett. 11 2584 Google Scholar
[6]	Ding C, Qin C, Man H, Imai T, Ning F 2013 Phys. Rev. B 88 041108 Google Scholar
[7]	Gu Y, Guo S L, Ning F L 2019 J. Semicond. 40 081506 Google Scholar
[8]	Guo S L, Ning F L 2018 Chin. Phys. B 27 097502 Google Scholar
[9]	Dietl T, Bonanni A, Ohno H 2019 J. Semicond. 40 080301 Google Scholar
[10]	邓正, 赵国强, 靳常青 2019 68 167502 Google Scholar Deng Z, Zhao G Q, Jin C Q 2019 Acta Phys. Sin. 68 167502 Google Scholar
[11]	Zhao G Q, Deng Z, Jin C Q 2019 J. Semicond. 40 081505 Google Scholar
[12]	Deng Z, Jin C Q, Liu Q, Wang X, Zhu J, Feng S, Chen L, Yu R, Arguello C, Goko T, Ning F, Zhang J, Wang Y, Aczel A, Munsie T, Williams T, Luke G, Kakeshita T, Uchida S, Higemoto W, Ito T, Gu Bo, Maekawa S, Morris G, Uemura Y 2011 Nat. Commun. 2 422 Google Scholar
[13]	Ding C, Man H, Qin C, Lu J, Sun Y, Wang Q, Yu B, Feng C, Goko T, Arguello C, Ning F 2013 Phys. Rev. B 88 041102 Google Scholar
[14]	Zhao K, Deng Z, Wang X, et al. 2013 Nat. Commun. 4 1442 Google Scholar
[15]	Zhao K, Chen B, Zhao G Q, Yuan Z, Liu Q, Deng Z, Zhu J, Jin C Q 2014 Chin. Sci. Bull. 59 2524 Google Scholar
[16]	Wang X, Liu Q, Lv Y, Gao W, Yang L, Yu R, Li F, Jin C Q 2008 Solid State Commun. 148 538 Google Scholar
[17]	Kamihara Y, Watanabe T, Hirano M, Hosono H 2008 J. Am. Chem. Soc. 130 3296 Google Scholar
[18]	Rotter M, Tegel M, Johrendt D 2008 Phys. Rev. Lett. 101 107006 Google Scholar
[19]	Zhao X, Dong J, Fu L, Gu Y, Zhang R, Yang Q, Xie L, Tang Y, Ning F 2022 J. Semicond. 43 112501 Google Scholar
[20]	Dong J, Zhao X, Fu L, Gu Y, Zhang R, Yang Q, Xie L, Ning F 2022 J. Semicond. 43 072501 Google Scholar
[21]	Yu S, Peng Y, Zhao G Q, Zhao J F, Wang X C, Zhang J, Deng Z, Jin C Q 2023 J. Semicond. 44 032501 Google Scholar
[22]	Kuriyama K, Nakamura F 1987 Phys. Rev. B 36 4439 Google Scholar
[23]	Kuriyama K, Kato T, Kawada K 1994 Phys. Rev. B 49 11452 Google Scholar
[24]	Wei S, Zunger A 1986 Phys. Rev. Lett. 56 528 Google Scholar
[25]	Mašek J, Kudrnovský J, Máca F, et al. 2007 Phys. Rev. Lett. 98 067202 Google Scholar
[26]	Toby B H, Von Dreele R B 2013 J. Appl. Crystallogr. 46 544 Google Scholar
[27]	Ding C, Gong X, Man H, Zhi G, Guo S, Zhao Y, Wang H, Chen B, Ning F 2014 Europhys. Lett. 107 17004 Google Scholar

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In掺杂对磁性半导体Li_1.05(Zn_0.925, Mn_0.075)As中铁磁序的调控